SD12T1G

## SDO5T1 Series, ESD Protrection Diode SZSDO5T1 Series 

## **SOD−323 Diodes for ESD Protection** 

These surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. These devices are ideal for situations where board space is at a premium. 

## **www.onsemi.com** 

## **MARKING DIAGRAM** 

## **Specification Features:** 

- Steady State Power Routing of 300 mW 

xx  M 

- Peak Power − 350 W (8 7 20 s) 

- Low Leakage 

- Cathode Indicated by Polarity Band 

**SOD−323 CASE 477 STYLE 1** 

- Package Weight: 4.507 mg/wmt 

- Meets IEC61000−4−2 Level 4, 15 kV (Air), 8 kV (Contact) 

- Meets IEC6100−4−4 Level 4, 40 A 

- Meets IEC6100−4−5 (Lightning), 24 A 

- Meets 16 kV Human Body Model ESD Requirements 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

> **CASE:** Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94, V−0 **LEAD FINISH:** 100% Matte Sn (Tin) 

## **MOUNTING POSITION:** Any **QUALIFIED MAX REFLOW TEMPERATURE:** 260°C 

Device Meets MSL 1 Requirements 

Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. 

- xx = Specific Device Code ZA = SD05T1 ZC = SD12T1 

- M = Month Code = Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|SD05T1G|SOD−323<br>(Pb−Free)|3000/Tape & Reel|
|SZSD05T1G|||
|SD12T1G|||
|SZSD12T1G|||



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **SD05T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2017 − Rev. 5** 

**SD05T1 Series, SZSD05T1 Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Power Dissipation @ 20�s (Note 1)<br>@ TL ≤25°C|Ppk|350|Watts|
|IEC 61000−4−2 (ESD)<br>Air<br>Contact||±15<br>±8.0|kV|
|IEC 61000−4−4 (EFT)||40|A|
|ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2)|VPP|30|kV|
|Total Power Dissipation on FR−4 Board (Note 2) @ TA= 25°C<br>Derate above 25°C<br>Thermal Resistance, Junction−to−Ambient|°PD°<br>R�JA|300<br>2.4<br>416|°mW°<br>mW/°C<br>°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C|
|Lead Solder Temperature − Maximum (10 Second Duration)|TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

*Other voltages may be available upon request. 

1. Nonrepetitive current pulse, per Figure 6. 

2. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm[2] . 

## **ELECTRICAL CHARACTERISTICS** 

(TA = 25 ° C unless otherwise noted) 

|(TA= 25°C|unless otherwise noted)|
|---|---|
|**Symbol**|**Parameter**|
|IPP|Maximum Reverse Peak Pulse Current|
|VC|Clamping Voltage @ IPP|
|VRWM|Working Peak Reverse Voltage|
|IR|Maximum Reverse Leakage Current @ VRWM|
|VBR|Breakdown Voltage @ IT|
|IT|Test Current|
|IF|Forward Current|
|VF|Forward Voltage @ IF|



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I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional<br>**----- End of picture text -----**<br>


## **ELECTRICAL CHARACTERISTICS** 

|**Device**|**VRWM**<br>**(V)**|**IR @ VRWM**<br>**(�A)**|**VBR, Breakdown Voltage**<br>**(V)**|**VBR, Breakdown Voltage**<br>**(V)**|**IT**<br>**mA**|**VC @ IPP = 5 A**<br>(Note 3)<br>**(V)**|**Max IPP**<br>(Note 3)<br>**(A)**|**VC @ Max IPP**<br>(Note 3)<br>**(V)**|**Max**<br>**Capacitance**<br>**(pF)**|
|---|---|---|---|---|---|---|---|---|---|
||||**Min**|**Max**|||||**VR = 0 V**<br>**f = 1.0 MHz**|
|SD05T1G|5.0|10|6.2|7.3|1.0|9.8|24|14.5|350|
|SD12T1G|12|1.0|13.3|15.75|1.0|19|15|25|150|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. 8 × 20 � s pulse waveform. 

*Include SZ−prefix devices where applicable. 

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**2** 

**SD05T1 Series, SZSD05T1 Series** 

## **TYPICAL CHARACTERISTICS** 

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280 140<br>260<br>120<br>240<br>100<br>220<br>200 80<br>180 60<br>160<br>40<br>140<br>20<br>120<br>100 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12<br>BIAS (V) BIAS (V)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 1. SD05 Typical Capacitance versus Bias Voltage** 

**Figure 2. SD12 Typical Capacitance versus Bias Voltage** 

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1000 100<br>10<br>100<br>1<br>10 0.1<br>−55 −35 −15 5 25 45 65 85 105 125 145 −55 −30 −5 20 45 70 95 120 145<br>TEMPERATURE ( ° C) TEMPERATURE ( ° C)<br>Figure 3. SD05 Typical Leakage Current Figure 4. SD12 Typical Leakage Current<br>versus Temperature versus Temperature<br>100 100<br>tr PEAK VALUE IRSM @ 8 �s<br>90 90<br>80 80 PULSE WIDTH (tP) IS DEFINED<br>AS THAT POINT WHERE THE<br>70 70 PEAK CURRENT DECAY = 8 �s<br>60 60<br>HALF VALUE IRSM/2 @ 20 �s<br>50 50<br>40 40<br>30 30<br>tP<br>20 20<br>10 10<br>0 0<br>0 25 50 75 100 125 150 175 200 0 20 40 60 80<br>TA, AMBIENT TEMPERATURE ( ° C) t, TIME (�s)<br>LEAKAGE CURRENT (nA) LEAKAGE CURRENT (nA)<br>C<br>°<br> = 25<br>A % OF PEAK PULSE CURRENT<br>POWER OR CURRENT @ T<br>PEAK PULSE DERATING IN % OF PEAK<br>**----- End of picture text -----**<br>


**Figure 5. Pulse Derating Curve** 

**Figure 6. 8** × **20 � s Pulse Waveform** 

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**3** 

**SD05T1 Series, SZSD05T1 Series** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

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HE 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>D WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>5. DIMENSION L IS MEASURED FROM END OF<br>eu RADIUS.<br>b 1 2 E<br>MILLIMETERS INCHES<br>= DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>A E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>C fo NOTE 5L A1 U n, ee STYLE 1: eee ee<br>NOTE 3 PIN 1. CATHODE<br> 2. ANODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.63<br>0.025 _ _ — <_<br>0.83<br>0.033<br>1.60<br>oot<br>0.063<br>2.85<br>0.112<br>SCALE 10:1 mm<br>BO inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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