SBSS84LT1G

BSS84LT1, SBSS84LT1 

## Power MOSFET Single P-Channel SOT-23 -50 V, 10 

- SOT−23 Surface Mount Package Saves Board Space 

- AEC Q101 Qualified − SBSS84LT1 

## **http://onsemi.com** 

• These Devices are Pb−Free and are RoHS Compliant **V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) −50 V 10  @ 10 V **Rating Symbol Value Unit** Drain−to−Source Voltage VDSS 50 Vdc **P−Channel** 3 Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current mA Continuous @ TA = 25 ° C ID 130 Pulsed Drain Current (tp ≤ 10 s) IDM 520 Total Power Dissipation @ TA = 25 ° C PD 225 mW 1 Operating and Storage Temperature TJ, Tstg −55 to ° C Range 150 Thermal Resistance − Junction−to−Ambient R JA 556 ° C/W 2 Maximum Lead Temperature for Soldering TL 260 ° C Purposes, for 10 seconds 3 ~~==~~ **SOT−23** Stresses exceeding Maximum Ratings may damage the device. Maximum **CASE 318** Ratings are stress ratings only. Functional operation above the Recommended 1 **STYLE 21** ~~ee >~~ Operating Conditions is not implied. Extended exposure to stresses above the 2 Recommended Operating Conditions may affect device reliability. **MARKING DIAGRAM & PIN ASSIGNMENT** 

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3<br>Drain<br>PD M<br>Tl<br>1 2<br>Gate Source<br>PD = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(*Note: Microdot may be in either location)<br>ORDERING INFORMATION<br>Device Package Shipping [[†]]<br>BSS84LT1G SOT−23 3000 / Tape & Reel<br>(Pb−Free)<br>SBSS84LT1G SOT−23 3000 / Tape & Reel<br>(Pb−Free)<br>=<br>**----- End of picture text -----**<br>


**Device Package Shipping**[[†]] BSS84LT1G SOT−23 3000 / Tape & Reel (Pb−Free) SBSS84LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BSS84LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **March, 2012 − Rev. 7** 

**BSS84LT1, SBSS84LT1** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= −250�Adc)||V(BR)DSS|−50|−|−|Vdc|
|Zero Gate Voltage Drain Current<br>(VDS= −25 Vdc, VGS= 0 Vdc)<br>(VDS= −50 Vdc, VGS= 0 Vdc)<br>(VDS= −50 Vdc, VGS= 0 Vdc, TJ= 125°C)||IDSS|−<br>−<br>−|−<br>−<br>−|−0.1<br>−15<br>−60|�Adc|
|Gate−Body Leakage Current (VGS=±20 Vdc, VDS= 0 Vdc)||IGSS|−|−|±10|nAdc|
|**ON CHARACTERISTICS**(Note 1)|||||||
|Gate−Source Threaded Voltage (VDS= VGS, ID= −250�A)||VGS(th)|−0.9|−|−2.0|Vdc|
|Static Drain−to−Source On−Resistance (VGS= −5.0 Vdc, ID= −100 mAdc)||RDS(on)|−|4.7|10|�|
|Transfer Admittance (VDS= −25 Vdc, ID= −100 mAdc, f = 1.0 kHz)|||yfs||50|−|−|mS|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|VDS= 5.0 Vdc|Ciss|−|36|−|pF|
|Output Capacitance|VDS= 5.0 Vdc|Coss|−|17|−||
|Transfer Capacitance|VDG= 5.0 Vdc|Crss|−|6.5|−||
|**SWITCHING CHARACTERISTICS**(Note 2)|||||||
|Turn−On Delay Time|VDD= −15 Vdc, ID= −2.5 Adc,<br>RL= 50�|td(on)|−|3.6|−|ns|
|Rise Time||tr|−|9.7|−||
|Turn−Off Delay Time||td(off)|−|12|−||
|Fall Time||tf|−|1.7|−||
|Gate Charge|VDD= −40 Vdc, ID= −0.5 A,<br>VGS= −10 V|QT|−|2.2|−|nC|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|Continuous Current||IS|−|−|−0.130|A|
|Pulsed Current||ISM|−|−|−0.520||
|Forward Voltage (Note 2)|VGS= 0 V, IS= −130 mA|VSD|−|−|−2.2|V|



1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

2. Switching characteristics are independent of operating junction temperature. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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0.6 0.5<br>VDS = 10 V 25°C 0.45 TJ = 25 ° C V GS  = -3.5 V<br>0.5 -55°C 150°C 0.4 -3.25 V<br>0.35<br>0.4<br>0.3 -3.0 V<br>0.3 0.25<br>0.2 -2.75 V<br>0.2<br>0.15<br>-2.5 V<br>0.1<br>0.1<br>0.05 -2.25 V<br>0 0<br>1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10<br>-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)<br>D D<br>−I −I<br>**----- End of picture text -----**<br>


**Figure 1. Transfer Characteristics** 

**Figure 2. On−Region Characteristics** 

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**2** 

**BSS84LT1, SBSS84LT1** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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9 7<br>VGS = -4.5 V 6.5 VGS = -10 V 150°C<br>8 150°C<br>6<br>7 5.5<br>6 5<br>4.5<br>5 25°C 4 25°C<br>4 3.5<br>3 -55°C 3 -55°C<br>2.5<br>2 2<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6<br>-ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance versus Drain Current** 

**Figure 4. On−Resistance versus Drain Current** 

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2 -8<br>VDS = -40 V<br>1.8 VGS = -10 V -7 TJ = 25°C<br>ID = -0.52 A<br>1.6 -6<br>-5<br>1.4<br>VGS = -4.5 V -4<br>1.2 ID = -0.13 A<br>-3 ID = -0.5 A<br>1<br>-2<br>0.8<br>-1<br>0.6 0<br>-�55 -5 45 95 145 0 500 1000 1500 2000<br>TJ, JUNCTION TEMPERATURE (°C) QT, TOTAL GATE CHARGE (pC)<br>(NORMALIZED)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Gate Charge** 

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1<br>TJ = 150°C 25°C -55°C<br>0.1<br>0.01<br>0.001<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VSD, DIODE FORWARD VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>ID<br>**----- End of picture text -----**<br>


**Figure 7. Body Diode Forward Voltage** 

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**3** 

**BSS84LT1, SBSS84LT1** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AP 

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NOTES:<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|D|2.|CONTROLLING DIMENSION: INCH.|
|3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH|
|SEE VIEW C|THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|
|3|THICKNESS OF BASE MATERIAL.|
|4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|
|PROTRUSIONS, OR GATE BURRS.|
|E|HE|MILLIMETERS|INCHES|
|DIM|MIN|NOM|MAX|MIN|NOM|MAX|
|A|0.89|1.00|1.11|0.035|0.040|0.044|
|c|
|A1|0.01|0.06|0.10|0.001|0.002|0.004|
|1|2|
|b|0.37|0.44|0.50|0.015|0.018|0.020|
|b|c|0.09|0.13|0.18|0.003|0.005|0.007|
|e|0.25|D|2.80|2.90|3.04|0.110|0.114|0.120|
|E|1.20|1.30|1.40|0.047|0.051|0.055|
|e|1.78|1.90|2.04|0.070|0.075|0.081|
|L|0.10|0.20|0.30|0.004|0.008|0.012|
|L1|0.35|0.54|0.69|0.014|0.021|0.029|
|A|H|E|2.10|2.40|2.64|0.083|0.094|0.104|
|0|°|−−−|10|°|0|°|−−−|10|°|
|L|
|STYLE 21:|
|A1|L1|PIN 1.|GATE|
|2.|SOURCE|
|VIEW C|3.|DRAIN|
|SOLDERING FOOTPRINT*|
|0.95|
|0.037|
|0.95|
|0.037|
|2.0|
|0.079|
|0.9|
|0.035|
|SCALE 10:1|mm|
|_|(—|inches|)|
|0.8|
|0.031|a|

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*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BSS84LT1/D** 

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