SBRS8130LT3G
Schottky Rectifier, 30 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 445 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- No. of Pins: 2Pins
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: DO-214AA (SMB)
- Diode Configuration: Single
- Forward Voltage Max: 445mV
- Forward Surge Current: 40A
- Average Forward Current: 1A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MBRS130LT3G, SBRS8130LT3G ## Schottky Power Rectifier **Surface Mount Power Package** This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. ## **http://onsemi.com** **SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS** ## **Features** - Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25 C) - Small Compact Surface Mountable Package with J−Bend Leads - Highly Stable Oxide Passivated Junction - Guard−Ring for Stress Protection - ESD Ratings: - Human Body Model = 3B (> 16000 V) **==> picture [44 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SMB<br>CASE 403A<br>**----- End of picture text -----**<br> - Machine Model = C (> 400 V) - AEC−Q101 Qualified and PPAP Capable ## **MARKING DIAGRAM** - SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - All Packages are Pb−Free* ## **Mechanical Characteristics** - Case: Epoxy, Molded - Weight: 100 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds - Cathode Polarity Band **==> picture [115 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW<br>1BL3<br>1BL3 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) **ORDERING INFORMATION Device Package Shipping**[†] MBRS130LT3G SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LT3G SMB 2,500 / (Pb−Free) Tape & Reel ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MBRS130LT3/D** **1** Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 9** **MBRS130LT3G, SBRS8130LT3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|30|V| |Average Rectified Forward Current<br>TL= 120C<br>TL= 110C|IF(AV)|1.0<br>2.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|40|A| |Operating Junction Temperature|TJ|−65 to +125|C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance,<br>Junction−to−Lead|�JL|12|C/W| |Thermal Resistance,<br>Junction−to−Ambient (TA= 25C, Min Pad, 1 oz copper)<br>Junction−to−Ambient (TA= 25C, 1” Pad, 1 oz copper)|R�JA|228.8<br>71.3|C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 A, TJ= 25C)<br>(iF= 2.0 A, TJ= 25C)|VF|0.395<br>0.445|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25C)<br>(Rated dc Voltage, TJ= 100C)|IR|1.0<br>10|mA| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle 2%. **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>TJ = 100C<br>TJ = 100C<br>1 1<br>25C<br>25C<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>VF, INSTANTANEOUS VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)<br>(A)<br>CURRENT (A)<br>, INSTANTANEOUS FORWARD CURRENTIF , MAXIMUM INSTANTANEOUS FORWARDIF<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 2. Maximum Forward Voltage** **http://onsemi.com** **2** **MBRS130LT3G, SBRS8130LT3G** **==> picture [490 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>10 10 TJ = 100C<br>T J = 100C<br>1.0 1.0 25C<br>25C<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001<br>0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Leakage Current Figure 4. Typical Maximum Reverse Leakage<br>Curent<br>2 0.9<br>1.8 0.8<br>DC<br>1.6<br>0.7<br>1.4<br>0.6<br>1.2 SQUARE WAVE<br>0.5<br>1 SQUARE<br>0.4<br>0.8<br>0.3<br>0.6<br>DC<br>0.2<br>0.4<br>0.2 0.1<br>0 0<br>100 105 110 115 120 125 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (A)F(AV), AVERAGE FORWARD CURRENT (A), AVERAGE FORWARD CURRENT (A)<br>, IREVERSE CURRENT (mA) , IREVERSE CURRENT (mA)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF(AV) PF(AV)F(AV)<br>**----- End of picture text -----**<br> **==> picture [236 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>SQUARE<br>0.4<br>0.3<br>DC<br>0.2<br>0.1<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>IF(AV), AVERAGE FORWARD CURRENT (A)F(AV), AVERAGE FORWARD CURRENT (A), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE POWER DISSIPATION (W)<br>PF(AV)F(AV)<br>**----- End of picture text -----**<br> **Figure 5. Current Derating (Case)** **Figure 6. Typical Power Dissipation** **==> picture [247 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350 NOTE: TYPICAL CAPACITANCE<br>AT 0 V = 290 pF<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 4 8 12 16 20 24 28 32<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Typical Capacitance** **http://onsemi.com** **3** **MBRS130LT3G, SBRS8130LT3G** **==> picture [490 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>D = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>10<br>0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>Figure 8. Thermal Response, Min Pad<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>Figure 9. Thermal Response, 1 Inch Pad<br>275 2.0<br>250 1.8 Power based on TA = 25C 2.0 oz<br>225 1.6 1.0 oz<br>200<br>1.4<br>175<br>1.2<br>150<br>1.0<br>125<br>0.8<br>100<br>1.0 oz 0.6<br>75<br>50 2.0 oz 0.4<br>25 0.2<br>0 0<br>0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700<br>COPPER AREA (mm [2] ) COPPER AREA (mm [2] )<br>EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>C/W)<br><br>JA (<br>�<br>POWER DISSIPATION (W)<br>**----- End of picture text -----**<br> **Figure 10. Thermal Resistance vs. Copper Area** **Figure 11. Power Dissipation vs. Copper Area** **http://onsemi.com** **4** **MBRS130LT3G, SBRS8130LT3G** ## **PACKAGE DIMENSIONS** **SMB** CASE 403A−03 ISSUE H **==> picture [193 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.90 2.20 2.28 0.075 0.087 0.090<br>—— A1 0.05 0.10 0.19 0.002 0.004 0.007<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>**----- End of picture text -----**<br> **==> picture [354 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> HE<br>NOTES:<br>1.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3.<br>DIM MIN NOM<br>A 1.90 2.20<br>r b D A1 0.05 0.10<br>b 1.96 2.03<br>c 0.15 0.23<br>D 3.30 3.56<br>E 4.06 4.32<br>ch POLARITY INDICATOROPTIONAL AS NEEDED : H E 5.21 5.44<br>L 0.76 1.02<br>L1<br>A<br>A1<br>ee L L1 c [oo] a<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>P|<br>L 2.743<br>0.108<br>=<br>2.159<br>0.085 mm<br>SCALE 8:1<br>cs (—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **MBRS130LT3/D** **5**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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