SBRD8835LT4G

**DATA SHEET www.onsemi.com** 

## **-** Switch mode Power Rectifier 

## **SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS** 

## **DPAK Surface Mount Package** MBRD835L, SBRD8835L 

This switch-mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. 

## **Features** 

- Low Forward Voltage 

- 150 °C Operating Junction Temperature 

- Epoxy Meets UL 94 V-0 @ 0.125 in 

- Compact Size 

- Lead Formed for Surface Mount 

- SBRD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free and are RoHS Compliant 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 0.4 Gram (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds 

- Shipped 75 Units Per Plastic Tube 

- ESD Rating: 

   - ♦ Machine Model = C (> 400 V) 

   - ♦ Human Body Model = 3B (> 8000 V) 

**==> picture [192 x 50] intentionally omitted <==**

**----- Start of picture text -----**<br>
DPAK<br>CASE 369C<br>1<br>4<br>3<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [27 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYWW<br>B<br>835LG<br>**----- End of picture text -----**<br>


|B835LG<br>A|=<br>=|Specific Device Number<br>Assembly Location*|
|---|---|---|
|Y|=|Year|
|WW<br>G|=<br>=|Work Week<br>Pb-Free Device|



* The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRD835LT4G|DPAK<br>(Pb-Free)|2500 /<br>Tape & Reel|
|SBRD8835LT4G-VF01|DPAK<br>(Pb-Free)|2500 /<br>Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MBRD835L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **December, 2025 − Rev. 15** 

**MBRD835L, SBRD8835L** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|35|V|
|Average Rectified Forward Current<br>(TC= 88°C)|IF(AV)|8.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, Duty = 0.5, TC= 80°C)|IFRM|16|A|
|Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)|IFSM|75|A|
|Repetitive Avalanche Current<br>(Current Decaying Linearly to Zero in 1�s, Frequency Limited by TJmax)|IAR|2.0|A|
|Storage / Operating Case Temperature|Tstg|−65 to +150|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance − Junction-to-Case|R�JC|2.8|°C/W|
|Thermal Resistance − Junction-to-Ambient (Note 2)|R�JA|80|°C/W|



2. Rating applies when surface mounted on the minimum pad size recommended. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 8 Amps, TC= +25°C)<br>(iF= 8 Amps, TC= +125°C)|VF|0.51<br>0.41|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TC= +25°C)<br>(Rated dc Voltage, TC= +100°C)|IR|1.4<br>35|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2%. 

**www.onsemi.com** 

**2** 

**MBRD835L, SBRD8835L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [238 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TJ = 125  ° C 25  ° C<br>1<br>0.1<br>0.01<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 1. Maximum Forward Voltage** 

**==> picture [237 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100 TJ = 125  ° C<br>10 100 °C<br>1<br>25 °C<br>0.1<br>0.01<br>0.001<br>0 5 10 15 20 25 30 35<br>VF, REVERSE VOLTAGE (VOLTS)<br>IR, REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 3. Maximum Reverse Current** 

**==> picture [238 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>T J  = 125 °C<br>1<br>75 °C<br>0.1<br>25 °C<br>0.01<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 2. Typical Forward Voltage<br>100<br>TJ = 125 °C<br>100 °C<br>10<br>1 75 °C<br>0.1<br>25 °C<br>0.01<br>0 5 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (VOLTS)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IR, REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Reverse Current** 

**www.onsemi.com** 

**3** 

**MBRD835L, SBRD8835L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [351 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 25 °C TYPICAL<br>MAXIMUM<br>1000<br>100<br>1 10<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 5. Maximum and Typical Capacitance<br>16 8<br>14.4 T J  = 125 °C 7 dc TJJ = 125 °C<br>12.8 R�JA = 6 °C/W<br>dc 6<br>11.2 � (RESISTIVE LOAD)<br>5 �  (RESISTIVE LOAD)<br>9.6 SQUARE WAVE<br>IPK � 5 [(CAPACITIVE]<br>8 I AV LOAD) 4<br>6.4 3<br>4.8<br>10<br>10 2<br>3.2<br>1<br>1.6 20 20<br>0 0<br>80 85 90 95 100 105 110 115 120 125 130 0 10 20 30 40<br>TC, CASE TEMPERATURE (°C) TAA, AMBIENT TEMPERATURE (°C)<br>Figure 6. Current Derating, Infinite Heatsink<br>5 8<br>4.5 dc TJ = 125 °C R�JA = 80 °C/W 7 TJ = 125 °CJ = 125 °C = 125 °C°CC �<br>SURFACE MOUNTED ON<br>4<br>� MINIMUM RECOMMENDED 6 IPKPK � 5 [[(]][CAPACITIVE]<br>3.5 (RESISTIVE LOAD) PAD SIZE IAV LOAD)<br>3 SQUARE WAVE IPK � 5 [(CAPACITIVE] 5 10<br>2.5 IAV LOAD) 4<br>20<br>2<br>3<br>1.5<br>10<br>2<br>1<br>0.5 20 1<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1.5 3 4.5<br>TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>C, CAPACITANCE (pF)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**==> picture [240 x 397] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>TJJ = 125 °C R�JA = 40 °C/W<br>7 dc<br>SURFACE MOUNTED ON<br>6 MINIMUM RECOMMENDED<br>PAD SIZE<br>5 �  (RESISTIVE LOAD)<br>SQUARE WAVE IPK � 5 [(CAPACITIVE]<br>4 IAV LOAD)<br>3<br>10<br>2<br>1<br>20<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>TAA, AMBIENT TEMPERATURE (°C)<br>Figure 7. Current Derating<br>8<br>TJ = 125 °CJ = 125 °C = 125 °C°CC<br>7 � (RESISTIVE LOAD)<br>6 IPKPK � 5 [[(]][CAPACITIVE] SQUARE WAVE dc<br>IAV LOAD)<br>5<br>10<br>4<br>20<br>3<br>2<br>1<br>0<br>0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 8. Current Derating, Free Air** 

**Figure 9. Forward Power Dissipation** 

**www.onsemi.com** 

**4** 

**MBRD835L, SBRD8835L** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|14|MBRD835LG, SBRD8835LG, SBRD8835LG-VF01, SBRD835LT4G-VF01, SBRD8835LT4G<br>OPN Marked as Discontinued + Rebranded the Data Sheet to**onsemi**format|7/4/2025|
|15|Removal of discontinued devices (MBRD835LG, SBRD8835LG, SBRD8835LG-VF01,<br>SBRD835LT4G-VF01, SBRD8835LT4G) from the data sheet|12/16/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

**www.onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [45 x 52] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>1 [2]<br>3<br>SCALE 1:1<br>**----- End of picture text -----**<br>


**==> picture [130 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
DPAK−3 6.10x6.54x2.28, 2.29P<br>CASE 369C<br>ISSUE K<br>**----- End of picture text -----**<br>


**==> picture [81 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE 14 MAY 2026<br>**----- End of picture text -----**<br>


**==> picture [31 x 48] intentionally omitted <==**

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

DATE 13 MAY 2026 

**DPAK−3 6.10x6.54x2.28, 2.29P** CASE 369C ISSUE K 

**==> picture [128 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>XXXXXXG AYWW<br>ALYWW XXX<br>XXXXXG<br>IC Discrete<br>XXXXXX = Device Code<br>A = Assembly Location<br>L = Wafer Lot<br>Y =  Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

**==> picture [316 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 2 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

