SBRB20200CTT4G

## MBRB20200CTG, SBRB20200CTT4G 

## SWITCHMODE Power Rectifier **Dual Schottky Rectifier** 

This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. 

**http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V** 

## **Features** 

- 200 V Blocking Voltage 

- Low Forward Voltage Drop 

- Guardring for Stress Protection and High dv/dt Capability (10,000 V/ | s) 

- Dual Diode Construction − Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating 

- AEC−Q101 Qualified and PPAP Capable 

- SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- All Packages are Pb−Free* 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 

- Weight: 1.7 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Max. for 10 Seconds 

- Device Meets MSL1 Requirements 

- ESD Rating: 

   - Human Body Model = 3B 

   - Machine Model = C 

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D [2] PAK<br>CASE 418B<br>1<br>4<br>3 “a<br>MARKING DIAGRAM<br>AY   WW<br>B20200G<br>AKA<br>:<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B20200 = Device Code<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MBRB20200CT/D** 

**1** 

 Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 7** 

**MBRB20200CTG, SBRB20200CTT4G** 

## **MAXIMUM RATINGS** (Per Leg) 

|**MAXIMUM RATINGS**(Per Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>(At Rated VR, TC= 134C)<br>Per Leg<br>Per Device|IF(AV)|10<br>20|A|
|Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 20 kHz, TC= +137C)<br>Per Leg|IFRM|20|A|
|Nonrepetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|150|A|
|Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)|IRRM|1.0|A|
|Storage Temperature Range|Tstg|−65 to +175|C|
|Operating Junction Temperature|TJ|−65 to +150|C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** (Per Leg) 

|**THERMAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|2.0|C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Leg) 

|**ELECTRICAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(IF= 10 A, TC= 25C)<br>(IF= 10 A, TC= 125C)<br>(IF= 20 A, TC= 25C)<br>(IF= 20 A, TC= 125C)|VF|0.9<br>0.8<br>1.0<br>0.9|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TC= 25C)<br>(Rated dc Voltage, TC= 125C)|IR|1.0<br>50|mA|
|**DYNAMIC CHARACTERISTICS**(Per Leg)||||
|Capacitance<br>(VR= −5.0 V, TC= 25C, Frequency = 1.0 MHz)|CT|500|pF|



1. Pulse Test: Pulse Width = 300 � s, Duty Cycle  2.0%. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MBRB20200CTG|D2PAK<br>(Pb−Free)|50 Units / Rail|
|MBRB20200CTT4G|D2PAK<br>(Pb−Free)|800 Units / Tape & Reel|
|SBRB20200CTT4G|D2PAK<br>(Pb−Free)|800 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**2** 

**MBRB20200CTG, SBRB20200CTT4G** 

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100 10,000<br>70<br>50 T J  = 150  C<br>T J  = 150  C 1,000<br>TJ = 125  C<br>20 100<br>TJ = 125  C TJ = 100  C<br>10 10<br>7<br>T J  = 100  C<br>5 1<br>TJ = 25  C<br>0.1<br>2<br>T J  = 25  C<br>1 0.01<br>0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200<br>vF, INSTANTANEOUS VOLTAGE (V) VR, REVERSE CURRENT (V)<br>Figure 1. Typical Forward Voltage (Per Leg) Figure 2. Typical Reverse Current (Per Leg)<br>40 TJ = 125  C SQUARE 25 RATED VOLTAGE<br>36 WAVE R �JC  = 2  C/W<br>32 10 20<br>28<br>dc<br>24 I PK 15<br>= 20<br>20 IAV SQUARE dc<br>WAVE<br>16<br>10<br>12<br>8<br>5<br>4<br>0<br>0<br>0 5 10 15 20 25 30 35 90 100 110 120 130 140 150 160<br>IF(AV), AVERAGE FORWARD CURRENT (A) TC, CASE TEMPERATURE (  C)<br>Figure 3. Forward Power Dissipation Figure 4. Current Derating, Case<br>20 500<br>R�JA = 16  C/W<br>RATED VOLTAGE TJ = 25  C<br>16 400<br>dc<br>12 300<br>8 SQUARE 200<br>WAVE<br>4 100<br>0 0<br>0 25 50 75 100 125 150 175 1 2 5 10 20 50 70 100<br>TA, AMBIENT TEMPERATURE (  C) VR, REVERSE VOLTAGE (V)<br><br>I   , REVERSE CURRENT (    A)R<br>I  , INSTANEOUS FORWARD CURRENT (AMP)F<br>P         , AVERAGE POWER DISSIPATION (WATTS)F(AV) I         , AVERAGE FORWARD CURRENT (AMPS)F(AV)<br>C, CAPACITANCE (pF)<br>I         , AVERAGE FORWARD CURRENT (AMPS)F(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating, Ambient** 

**Figure 6. Typical Capacitance (Per Leg)** 

**http://onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **D[2] PAK 3** 

CASE 418B−04 

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ISSUE L<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>ae H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG  AKA<br>oe<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

## **SOLDERING FOOTPRINT*** 

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10.49<br>8.38<br>16.155 T L 7<br>2X<br>3.504<br>2X<br>UE<br>1.016<br>5.080<br>aro<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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