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SBC856BDW1T1G
Bipolar Transistor Array, Dual PNP, 65 V, 100 mA
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-3
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 380mW
- Transistor Case Style: SOT-363
- Transition Frequency NPN: -
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 150hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 65V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.023 € |
| Current stock | 25+ |
| Lead time | 7 days |
Datasheet
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Updated at March 10, 2026