SBAW56LT1G

BAW56L, SBAW56L 

## Dual Switching Diode Common Anode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **www.onsemi.com** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (EACH DIODE) 

**SOT−23 (TO−236) CASE 318 STYLE 12** 

|**MAXIMUM RATINGS**(EACH DIODE)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|70|V|
|Forward Current<br>~~ee~~|IF<br>~~eee~~|200<br>~~eee~~|mA<br>~~eee~~|
|Forward Surge Current<br>(60 Hz @ 1 cycle)<br>~~ee~~<br>~~ee~~|IFSM<br>~~eee~~<br>~~eee~~|2.0<br>~~eee~~<br>~~eee~~|A<br>~~eee~~<br>~~eee~~|
|Non−Repetitive Peak Forward Current<br>t = 1 s (Note 3)<br>~~ee ~~<br>~~ee~~|IFSM<br> ~~eee~~<br>~~eee~~|4.0<br>~~eee~~<br>~~eee~~<br>~~eee~~|A<br>~~eee~~<br>~~eee~~<br>~~eee~~|
|Repetitive Peak Forward Current<br>Pulse Wave = 1 sec, Duty Cycle =  66%<br>~~ee ~~<br>~~ee~~|IFRM<br> ~~eee~~<br>~~ee~~|500<br>~~eee~~<br>~~ee~~<br>~~eee~~|mA<br>~~eee~~<br>~~ee~~<br>~~eee~~|



CATHODE ANODE 1 3 ~~—r~~ 2 CATHODE 

**MARKING DIAGRAM** 

## **THERMAL CHARACTERISTICS** 

**Characteristic Symbol Max Unit** A1 M Total Device Dissipation FR−5 Board PD 225 mW (Note 1) TDerate above 25A = 25 °° CC 1.8 mW/ ° C 1 ~~Pf]~~ Thermal Resistance, R JA 556 ° C/W A1 = Device Code Junction−to−Ambient M = Date Code* ~~ee~~ Total Device Dissipation PD 300 mW = Pb−Free Package Alumina Substrate,(Note 2) TA = 25 ° C 2.4 mW/ ° C (Note: Microdot may be in either location) Derate above 25 ° C *Date Code orientation and/or overbar may ~~UE PF~~ vary depending upon manufacturing location. | Thermal Resistance, R JA 417 ° C/W Junction−to−Ambient ~~a~~ Junction and Storage Temperature TJ, Tstg −55 to ° C **ORDERING INFORMATION** +150 **Device Package Shipping**[†] Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BAW56LT1G SOT−23 3,000 / assumed, damage may occur and reliability may be affected. (Pb−Free) Tape & Reel 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SBAW56LT1G SOT−23 3,000 / 3. Square Wave; Tj = 25 ° C. (Pb−Free) Tape & Reel BAW56LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SBAW56LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel ~~ee~~ ee ee ee ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 **1** Publication Order Number: **October, 2016 − Rev. 10 BAW56LT1/D** 

## **BAW56L, SBAW56L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each|Diode)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|70|−|V|
|Reverse Voltage Leakage Current<br>(VR= 25 V, TJ= 150°C)<br>(VR= 70 V)<br>(VR= 70 V, TJ= 150°C)|IR|−<br>−<br>−|30<br>2.5<br>50|�A|
|Diode Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CD|−|2.0|pF|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA) (Figure 1) RL= 100�|trr|−|6.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k� variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**BAW56L, SBAW56L** 

## **Curves Applicable to Each Cathode** 

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100<br>TA = 85°C<br>10<br>TA = -�40°C<br>1.0 TA = 25°C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage<br>1.75<br>1.5<br>1.25<br>1.0<br>0.75<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>TA = 85°C<br>0.1<br>TA = 55°C<br>0.01<br>TA = 25°C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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12<br>Based on square wave currents<br>10 TJ = 25 ° C prior to surge<br>8<br>6<br>4<br>2<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>tP, PULSE ON TIME (ms)<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 5. Forward Surge Current** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318<br>ISSUE AT<br>**----- End of picture text -----**<br>


## DATE 01 MAR 2023 

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SCALE 4:1<br>**----- End of picture text -----**<br>


## **GENERIC MARKING DIAGRAM*** 

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XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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## **STYLES ON PAGE 2** 

**DOCUMENT NUMBER: 98ASB42226B** 

**DESCRIPTION: SOT−23 (TO−236)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318 ISSUE AT 

DATE 01 MAR 2023 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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