SBAV99RWT1G
Small Signal Diode, Dual Series, 100 V, 715 mA, 1.25 V, 6 ns, 2 A
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):715mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward Su
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-323
- Diode Configuration: Dual Series
- Forward Voltage Max: 1.25V
- Forward Surge Current: 2A
- Reverse Recovery Time: 6ns
- Average Forward Current: 715mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.04 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## Dual Series Switching Diodes ## BAV99W, BAV99RW The BAV99WT1G is a smaller package, equivalent to the BAV99LT1G. ## **Features** - S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* ## **Suggested Applications** - ESD Protection - Polarity Reversal Protection - Data Line Protection - Inductive Load Protection - Steering Logic ## **MAXIMUM RATINGS** (Each Diode) |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Reverse Voltage|VR|100|Vdc| |Forward Current|IF|215|mAdc| |Peak Forward Surge Current|IFM(surge)|500|mAdc| |Repetitive Peak Reverse Voltage|VRRM|100|V| |Average Rectified Forward Current<br>(Note 1)<br>(averaged over any 20 ms period)|IF(AV)|715|mA| |Repetitive Peak Forward Current|IFRM|450|mA| |Non−Repetitive Peak Forward Current<br>t = 1.0�s<br>t = 1.0 ms<br>t = 1.0 s|IFSM|2.0<br>1.0<br>0.5|A| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 � 0.75 � 0.062 in. ## **SC−70 CASE 419** **==> picture [192 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> ANODE CATHODE<br>1 2<br>3<br>CATHODE/ANODE<br>BAV99WT1<br>SC−70, CASE 419, STYLE 9<br>CATHODE ANODE<br>1 2<br>3<br>CATHODE/ANODE<br>BAV99RWT1<br>SC−70, CASE 419, STYLE 10<br>MARKING DIAGRAM<br>A7 = BAV99W<br>X7 M �<br>F7 = BAV99RW<br>� M = Date Code<br>1 � = Pb−Free Package<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Packa**|**ge**<br>**Shipping**†| |---|---|---| |BAV99WT1G|SC−7<br>(Pb−Fr|0<br>ee)<br>3,000 / Tape & Reel| |SBAV99WT1G|SC−7<br>(Pb−Fr|0<br>ee)<br>3,000 / Tape & Reel| |BAV99RWT1G|SC−7<br>(Pb−Fr|0<br>ee)<br>3,000 / Tape & Reel| |SBAV99RWT1G|SC−7<br>(Pb−Fr|0<br>ee)<br>3,000 / Tape & Reel| |BAV99WT3G|SC−7<br>(Pb−Fr|0<br>ee)<br>10,000 / Tape & Reel| |NSVBAV99WT3G|SC−7<br>(Pb−Fr|0<br>ee)<br>10,000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **February, 2022 − Rev. 11** **BAV99WT1/D** **BAV99W, BAV99RW** ## **THERMAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Total Device Dissipation FR−5 Board, (Note 1) TA= 25°C<br>Derate above 25°C|PD|200<br>1.6|mW<br>mW/°C| |Thermal Resistance Junction−to−Ambient|R�JA|625|°C/W| |Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C| |Thermal Resistance Junction−to−Ambient|R�JA|417|°C/W| |Junction and Storage Temperature|TJ, Tstg|−65 to +150|°C| ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each|Diode)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|100|−|Vdc| |Reverse Voltage Leakage Current<br>(VR= 100 Vdc)<br>(VR= 25 Vdc, TJ= 150°C)<br>(VR= 70 Vdc, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>30<br>50|�Adc| |Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF| |Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc| |Reverse Recovery Time<br>(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) (Figure 1) RL= 100�|trr|−|6.0|ns| |Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR−5 = 1.0 � 0.75 � 0.062 in. 2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. **==> picture [486 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 820 �<br>+10 V 2 k<br>100 �H IF 0.1 �F tr t p t IF<br>0.1 �F 10% t rr t<br>DUT<br>50 � OUTPUT 50 � INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: (a) A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: (c) tp » trr<br>**----- End of picture text -----**<br> **Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **2** **BAV99W, BAV99RW** ## **CURVES APPLICABLE TO EACH DIODE** **==> picture [487 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>TA = 150°C<br>100 1.0 TA = 125°C<br>TA = 85°C<br>10 0.1<br>TA = 150°C TA = 25°C TA = -�55°C TA = 55°C<br>1.0 0.01<br>TA = 25°C<br>0.1 0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>μ<br>IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (��A)<br>**----- End of picture text -----**<br> **Figure 2. Forward Voltage** **Figure 3. Leakage Current** **==> picture [238 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 4. Capacitance** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 07 OCT 2021<br>**----- End of picture text -----**<br> **SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE 2. EMITTER 2. SOURCE<br> 3. COLLECTOR 3. COLLECTOR 3. DRAIN<br>**----- End of picture text -----**<br> **==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE 2. ANODE<br>3. ANODE 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE 2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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