SBAV99LT3G

BAV99L, SBAV99L 

## Dual Series Switching Diode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **www.onsemi.com** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (Each Diode) 

|**Rating**<br>~~a~~|**Symbol**<br>~~a~~<br>~~eG~~<br>~~es~~|**Value**<br>~~a~~<br>~~eG~~<br>~~es~~|**Unit**<br>~~a~~|
|---|---|---|---|
|Reverse Voltage<br>~~es~~|VR<br>~~eG~~<br>~~es~~<br>~~es~~|100<br>~~eG~~<br>~~es~~<br>~~es~~|Vdc<br>~~es~~|
|Forward Current|IF<br>~~es~~|215<br>~~es~~|mAdc|
|Peak Forward Surge Current<br>~~Po~~<br>~~es Gn~~|IFM(surge)<br>~~Gn Gs~~|500<br>~~Gs~~|mAdc|
|Repetitive Peak Reverse Voltage<br>~~es Gn~~|VRRM<br>~~Gn Gs~~|100<br>~~Gs~~|V|
|Average Rectified Forward Current (Note 1)<br>(averaged over any 20 ms period)<br>~~es Gn~~<br>~~Po~~|IF(AV)<br>~~Gn Gs~~<br>~~Po~~|715<br>~~Gs~~<br>~~Po~~|mA<br>~~Po~~|
|Repetitive Peak Forward Current<br>~~eT~~|IFRM<br>~~eT~~|450<br>~~eT~~|mA<br>~~eT~~|
|Non−Repetitive Peak Forward Current<br>t = 1.0 s<br>t = 1.0 ms<br>t = 1.0 s<br>~~eT~~|IFSM<br>~~eT~~|2.0<br>1.0<br>0.5<br>~~eT~~|A<br>~~eT~~|



|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|
|Total Device Dissipation<br>FR−5 Board (Note 1) TA= 25°C<br>Derate above 25°C<br>~~ee~~|PD<br>~~ee~~|225<br>1.8<br>~~ee~~|mW<br>mW/°C<br>~~ee~~|
|Thermal Resistance, Junction−to−Ambient<br>~~rT~~|R JA<br>~~rT~~|556<br>~~rT~~|°C/W<br>~~rT~~|
|Total Device Dissipation<br>Alumina Substrate (Note 2)<br>TA= 25°C<br>Derate above 25°C<br>~~rT~~<br>~~a~~|PD<br>~~rT~~<br>~~G~~~~**ee**e~~|300<br>2.4<br>~~rT~~<br>~~Gs~~|mW<br>mW/°C<br>~~rT~~|
|Thermal Resistance, Junction−to−Ambient<br>~~en~~<br>~~a~~|R JA<br>~~en~~<br>~~G~~~~**ee**e~~|417<br>~~en~~<br>~~Gs~~<br>~~ee~~|°C/W<br>~~en~~<br>~~ee~~|
|Junction and Storage<br>Temperature Range<br>~~a~~|TJ, Tstg<br>~~G~~~~**ee**e~~|−65 to<br>+150<br>~~Gs~~<br>~~ee~~|°C<br>~~ee~~|



**CASE 318 SOT−23 STYLE 11** 

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ANODE CATHODE<br>1 TT 2<br>3<br>CATHODE/ANODE<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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A7 M<br>1<br>A7 = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Package**<br>**Shipping**†|
|---|---|---|
|BAV99LT1G|SOT−23<br>(Pb−Free)|SOT−23<br>(Pb−Free)<br>3,000 / Tape & Reel|
|SBAV99LT1G|SOT−23<br>(Pb−Free)|SOT−23<br>(Pb−Free)<br>3,000 / Tape & Reel|
|BAV99LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SBAV99LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 12** 

**BAV99LT1/D** 

**BAV99L, SBAV99L** 

**OFF CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) 

|**OFF CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each Diode)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Reverse Breakdown Voltage,<br>(I(BR)= 100�A)|V(BR)|100|−|Vdc|
|Reverse Voltage Leakage Current,<br>(VR= 100 Vdc)<br>(VR= 25 Vdc, TJ= 150°C)<br>(VR= 70 Vdc, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>30<br>50|�Adc|
|Diode Capacitance,<br>(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF|
|Forward Voltage,<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc|
|Reverse Recovery Time,<br>(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) RL= 100�|trr|−|6.0|ns|
|Forward Recovery Voltage,<br>(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V|



## **CURVES APPLICABLE TO EACH DIODE** 

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1000 100<br>TA = 150 ° C<br>10<br>100 TA = 150 ° C TA = 125 ° C<br>TA = 125 ° C 1.0<br>10 TA = 85 ° C TA = 85 ° C<br>TA = 55 ° C 0.1 TA = 55 ° C<br>TA = 25 ° C<br>1<br>TA = −40 ° C 0.01 TA = 25 ° C<br>TA = −55 ° C<br>0.1 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Leakage Current<br>0.61<br>0.59<br>0.57<br>0.55<br>0.53<br>0.51<br>0.49<br>0.47<br>0.45<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, DIODE CAPACITANCE (pF)<br>d<br>C<br>**----- End of picture text -----**<br>


**Figure 3. Capacitance** 

**www.onsemi.com** 

**2** 

**BAV99L, SBAV99L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,<br>1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>0.25 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>3 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>o E eat [|] HE T = 4.THE BASE MATERIAL.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,<br>1 2 PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c STYLE 11:<br>END VIEW PIN 1. ANODE<br>2. CATHODE<br>3. CATHODE−ANODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 r o 0.90<br>LO \ ct<br>3X 0.80 | LL 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**BAV99LT1/D** 

**3**