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SBAV99LT1G
Small Signal Diode, Dual Series, 100 V, 715 mA, 1.25 V, 6 ns, 500 mA
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- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):715mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: AEC-Q101
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Diode Configuration: Dual Series
- Forward Voltage Max: 1.25V
- Forward Surge Current: 500mA
- Reverse Recovery Time: 6ns
- Average Forward Current: 715mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 36000 |
| Price | 0.018 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
BAV99L, SBAV99L ## Dual Series Switching Diode ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* ## **MAXIMUM RATINGS** (Each Diode) |**MAXIMUM RATINGS**(Each Diode)|~~Ge~~|~~Gs~~|| |---|---|---|---| |**Rating**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~Ge~~<br>~~ee~~|**Value**<br>~~ee~~<br>~~Gs~~<br>~~ee~~|**Unit**<br>~~ee~~| |Reverse Voltage<br>~~ee~~|VR<br>~~Ge~~<br>~~ee~~<br>~~ee~~|100<br>~~Gs~~<br>~~ee~~<br>~~ee~~|Vdc<br>~~ee~~| |Forward Current|IF<br>~~ee~~|215<br>~~ee~~|mAdc| |Peak Forward Surge Current<br>~~Pe~~<br>~~es Sn~~|IFM(surge)<br>~~Sn Ge~~|500<br>~~Ge~~|mAdc| |Repetitive Peak Reverse Voltage<br>~~es Sn~~<br>~~|~~|VRRM<br>~~Sn Ge~~<br>ee~~eee~~<br>|100<br>~~Ge~~<br>~~eee~~<br>|V<br>~~eee~~<br>| |Average Rectified Forward Current (Note 1)<br>(averaged over any 20 ms period)<br>~~es Sn~~<br>~~ee~~<br>~~|~~|IF(AV)<br>~~Sn Ge~~<br>~~ee~~<br>ee~~eee~~<br>|715<br>~~Ge~~<br>~~ee~~<br>~~eee~~<br>|mA<br>~~ee~~<br>~~eee~~<br>| |Repetitive Peak Forward Current<br>~~|~~|IFRM<br>ee~~eee~~<br>~~ff~~|450<br>~~eee~~<br>~~ff~~|mA<br>~~eee~~<br>~~ff~~| |Non−Repetitive Peak Forward Current<br>t = 1.0 s<br>t = 1.0 ms<br>t = 1.0 s<br>~~| ~~|IFSM<br>ee~~eee~~<br> ~~ff~~|2.0<br>1.0<br>0.5<br>~~eee~~<br>~~ff~~|A<br>~~eee~~<br>~~ff~~| **CASE 318 SOT−23 STYLE 11** **==> picture [130 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> ANODE CATHODE<br>1 ae 2<br>3<br>CATHODE/ANODE<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [39 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> A7 M<br>1<br>**----- End of picture text -----**<br> A7 = Device Code M = Date Code* = Pb−Free Package |**Characteristic**<br>~~es ee~~|**Symbol**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~| |---|---|---|---| |Total Device Dissipation<br>FR−5 Board (Note 1) TA= 25°C<br>Derate above 25°C<br>~~es ee~~|PD<br>~~ee~~|225<br>1.8<br>~~ee~~|mW<br>mW/°C<br>~~ee~~| |Thermal Resistance, Junction−to−Ambient<br>~~es ee~~<br>~~tT.~~|R JA<br>~~ee~~<br>~~tT.~~|556<br>~~ee~~<br>~~tT.~~|°C/W<br>~~ee~~<br>~~tT.~~| |Total Device Dissipation<br>Alumina Substrate (Note 2)<br>TA= 25°C<br>Derate above 25°C<br>~~tT.~~<br>~~a~~|PD<br>~~tT.~~<br>~~et~~~~**e**n~~|300<br>2.4<br>~~tT.~~<br>~~**e**s~~|mW<br>mW/°C<br>~~tT.~~| |Thermal Resistance, Junction−to−Ambient<br>~~es~~<br>~~a~~|R JA<br>~~es~~<br>~~et~~~~**e**n~~<br>~~e~~|417<br>~~es~~<br>~~**e**s~~|°C/W<br>~~es~~<br>~~e~~| |Junction and Storage<br>Temperature Range<br>~~a~~|TJ, Tstg<br>~~et~~~~**e**n~~<br>~~e~~|−65 to<br>+150<br>~~**e**s~~|°C<br>~~e~~| (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Package**<br>**Shipping**†| |---|---|---| |BAV99LT1G|SOT−23<br>(Pb−Free)|SOT−23<br>(Pb−Free)<br>3,000 / Tape & Reel| |SBAV99LT1G|SOT−23<br>(Pb−Free)|SOT−23<br>(Pb−Free)<br>3,000 / Tape & Reel| |BAV99LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |SBAV99LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **BAV99LT1/D** **1** © Semiconductor Components Industries, LLC, 2015 **December, 2015 − Rev. 11** ## **BAV99L, SBAV99L** **OFF CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) |**OFF CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each Diode)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |Reverse Breakdown Voltage,<br>(I(BR)= 100�A)|V(BR)|100|−|Vdc| |Reverse Voltage Leakage Current,<br>(VR= 100 Vdc)<br>(VR= 25 Vdc, TJ= 150°C)<br>(VR= 70 Vdc, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>30<br>50|�Adc| |Diode Capacitance,<br>(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF| |Forward Voltage,<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc| |Reverse Recovery Time,<br>(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) RL= 100�|trr|−|6.0|ns| |Forward Recovery Voltage,<br>(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V| ## **CURVES APPLICABLE TO EACH DIODE** **==> picture [492 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>TA = 150 ° C<br>10<br>100 TA = 150 ° C TA = 125 ° C<br>TA = 125 ° C 1.0<br>10 TA = 85 ° C TA = 85 ° C<br>TA = 55 ° C 0.1 TA = 55 ° C<br>TA = 25 ° C<br>1<br>TA = −40 ° C 0.01 TA = 25 ° C<br>TA = −55 ° C<br>0.1 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Leakage Current<br>0.61<br>0.59<br>0.57<br>0.55<br>0.53<br>0.51<br>0.49<br>0.47<br>0.45<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, DIODE CAPACITANCE (pF)<br>d<br>C<br>**----- End of picture text -----**<br> **Figure 3. Capacitance** **www.onsemi.com** **2** **BAV99L, SBAV99L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AP **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>SEE VIEW C<br>3<br>E HE<br>c<br>1 2<br>b<br>e 0.25<br>A<br>L<br>A1<br>L1<br>VIEW C<br>**----- End of picture text -----**<br> |NOTES:|NOTES:|NOTES:||||||||| |---|---|---|---|---|---|---|---|---|---|---| ||1.|DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,|||||||DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,|| ||1982.|||||||||| ||2.|CONTROLLING DIMENSION: INCH.||||||||| ||3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH||||||||| ||THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM||||||||THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|| ||THICKNESS OF BASE MATERIAL.|||||||||| ||4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,||||||DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,||| ||PROTRUSIONS, OR GATE BURRS.|||||||||| ||||||**MILLIMETERS**||||**INCHES**|| ||**DIM**||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| |||**A**|||0.89|1.00|1.11|0.035|0.040|0.044| |||**A1**|||0.01|0.06|0.10|0.001|0.002|0.004| |||**b**|||0.37|0.44|0.50|0.015|0.018|0.020| |||**c**|||0.09|0.13|0.18|0.003|0.005|0.007| |||**D**|||2.80|2.90|3.04|0.110|0.114|0.120| |||**E**|||1.20|1.30|1.40|0.047|0.051|0.055| |||**e**|||1.78|1.90|2.04|0.070|0.075|0.081| |||**L**|||0.10|0.20|0.30|0.004|0.008|0.012| |||**L1**|||0.35|0.54|0.69|0.014|0.021|0.029| |||**HE**|||2.10|2.40|2.64|0.083|0.094|0.104| ||||||0<br>°|−−−|10<br>°|0<br>°|−−−|10<br>°| ||STYLE 11:|||||||||| ||PIN 1.||PIN 1.||ANODE|||||| ||||2.||CATHODE|||||| ||||3.||CATHODE−ANODE|||||| ## **SOLDERING FOOTPRINT** **==> picture [158 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> 0.95<br>0.037<br>0.95<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>SCALE 10:1 mm<br>_ (— inches )<br>0.8<br>0.031 a<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com** **BAV99LT1/D** **3**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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