SBAT54XV2T5G

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## Schottky Barrier Diodes BAT54XV2 

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) 

|**MAXIMUM RATINGS** (TJ= 125°C unless|otherwise|noted)||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|30|V|
|**THERMAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−5 Board,<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|200<br>2.0|mW<br>mW/°C|
|Forward Current (DC)|IF|200 Max|mA|
|Non−Repetitive Peak Forward<br>Current, tp< 10 msec|IFSM|600|mA|
|Repetitive Peak Forward Current<br>Pulse Wave = 1 sec, Duty Cycle =  66%|IFRM|300|mA|
|Thermal Resistance,<br>Junction−to−Ambient|R�JA|635|°C/W|
|Junction and Storage Temperature|TJ, Tstg|−55 to 125|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. 

## **30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES** 

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1 2<br>CATHODE ANODE<br>2<br>SOD−523<br>CASE 502<br>1<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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JVM  �<br>�<br>1<br>JV = Device Code<br>M = Date Code*<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BAT54XV2T1G|SOD−523<br>(Pb−Free)|3000 / Tape &<br>Reel|
|BAT54XV2T5G|SOD−523<br>(Pb−Free)|8000 / Tape &<br>Reel|
|SBAT54XV2T1G|SOD−523<br>(Pb−Free)|3000 / Tape &<br>Reel|
|SBAT54XV2T5G|SOD−523<br>(Pb−Free)|8000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2017 **December, 2022 − Rev. 13** 

**BAT54XV2T1/D** 

**BAT54XV2** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**E**|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|n|oted)|oted)|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**Characteristic**|||||**Symbol**||**Min**|**Typ**|||**Max**|**Unit**|
||Reverse Breakdown Voltage<br>(IR= 10�A)|||||V(BR)R||30|−|||−|V|
||Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)||||||CT|−|7.6|||10|pF|
||Reverse Leakage<br>(VR= 25 V)||||||IR|−|0.3|||2.0|�A|
||Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)||||||VF|−<br>−<br>−<br>−<br>−|0.22<br>0.28<br>0.35<br>0.39<br>0.46|||0.24<br>0.32<br>0.40<br>0.50<br>0.80|V|
||Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA) Figure 1||||||trr|−|−|||5.0|ns|
||820�|||||t|~~t~~||of 10 mA.<br>IF<br>IR<br>~~trr~~<br>t<br>iR(REC)= 1 mA<br>OUTPUT PULSE<br>(IF= IR= 10 mA; measured<br>at iR(REC)= 1 mA)|||~~t~~||
||+10 V|2 k<br>0.1�F<br>100�H|IF|0.1�F||||||||||
||||||||~~p~~|||||||
|||||||~~r~~|10%<br>90%|||||||
|||||||||||||~~rr~~||
|||||||||||||||
|||||50�Input<br>Sampling<br>Oscilloscope||||||||||
|||||||||||||||
|||||||||||||||
|||||||||||||||



**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**BAT54XV2** 

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100 1000<br>TA = 150 ° C<br>100 TA = 125 ° C<br>10 150 ° C<br>10 TA = 85 ° C<br>125 ° C 1.0<br>1.0<br>85 ° C<br>25 ° C −40 ° C −55 ° C 0.1 TA = 25 ° C<br>0.1 0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>14 25<br>Based on square wave currents<br>12 TJ = 25 ° C prior to surge<br>20<br>10<br>15<br>8<br>6 10<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms)<br>A)<br>�<br>, FORWARD CURRENT (mA) , REVERSE CURRENT (<br>IF IR<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**Figure 5. Forward Surge Current** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOD−523 1.20x0.80x0.60** CASE 502 ISSUE F 

## DATE 08 FEB 2024 

## **GENERIC** 

## **MARKING DIAGRAM*** 

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XX XX<br>1 2 1 2<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M  Date Code<br>M M<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

## **DOCUMENT NUMBER: 98AON11524D DESCRIPTION: SOD−523 1.20x0.80x0.60** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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