SBAT54XV2T1G

BAT54XV2 

## Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. 

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## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) 

|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|Total Device Dissipation FR−5 Board,<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C<br>~~ee~~|PD<br>~~ee~~|200<br>1.57<br>~~ee~~|mW<br>mW/°C<br>~~ee~~|
|Forward Current (DC)<br>~~ee~~<br>~~ee~~|IF<br>~~ee~~<br>~~eee~~|200 Max<br>~~ee~~<br>~~eee~~|mA<br>~~ee~~<br>~~eee~~|
|Non−Repetitive Peak Forward<br>Current, tp< 10 msec<br>~~ee~~<br>~~ee~~|IFSM<br>~~eee~~<br>~~eee~~|600<br>~~eee~~<br>~~eee~~|mA<br>~~eee~~<br>~~eee~~|
|Repetitive Peak Forward Current<br>Pulse Wave = 1 sec, Duty Cycle =  66%<br>~~ee ~~<br>~~ee~~<br>~~EE~~|IFRM<br> ~~eee~~<br>~~eee~~<br>~~eee~~|300<br>~~eee~~<br>~~eee~~<br>~~eee~~|mA<br>~~eee~~<br>~~eee~~<br>~~eee~~|
|Thermal Resistance,<br>Junction−to−Ambient<br>~~ee ~~<br>~~EE~~|R JA<br> ~~eee~~<br>~~eee~~|635<br>~~eee~~<br>~~eee~~|°C/W<br>~~eee~~<br>~~eee~~|
|Junction and Storage Temperature<br>~~EE~~|TJ, Tstg<br>~~eee~~|−55 to 125<br>~~eee~~|°C<br>~~eee~~|



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1 2<br>CATHODE ANODE<br>2<br>SOD−523<br>CASE 502<br>1<br>®<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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JVM<br>1<br>JV = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BAT54XV2T1G|SOD−523<br>(Pb−Free)|3000 / Tape &<br>Reel|
|BAT54XV2T5G|SOD−523<br>(Pb−Free)|8000 / Tape &<br>Reel|
|SBAT54XV2T1G|SOD−523<br>(Pb−Free)|3000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2017 **February, 2017 − Rev. 11** 

**BAT54XV2T1/D** 

**BAT54XV2** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**E**|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|n|oted)|oted)|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**Characteristic**|||||**Symbol**||**Min**|**Typ**|||**Max**|**Unit**|
||Reverse Breakdown Voltage<br>(IR= 10�A)|||||V(BR)R||30|−|||−|V|
||Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)||||||CT|−|7.6|||10|pF|
||Reverse Leakage<br>(VR= 25 V)||||||IR|−|0.3|||2.0|�A|
||Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)||||||VF|−<br>−<br>−<br>−<br>−|0.22<br>0.28<br>0.35<br>0.39<br>0.46|||0.24<br>0.32<br>0.40<br>0.50<br>0.80|V|
||Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA) Figure 1||||||trr|−|−|||5.0|ns|
||820�|||||t|~~t~~||of 10 mA.<br>IF<br>IR<br>~~t~~rr<br>t<br>iR(REC)= 1 mA<br>OUTPUT PULSE<br>(IF= IR= 10 mA; measured<br>at iR(REC)= 1 mA)|||~~t~~||
||+10 V|2 k<br>0.1�F<br>100�H|IF|0.1�F||||||||||
||||||||p|||||||
|||||||~~r~~|10%<br>90%|||||||
|||||||||||||rr||
|||||||||||||||
|||||50�Input<br>Sampling<br>Oscilloscope||||||||||
|||||||||||||||
|||||||||||||||
|||||||||||||||



**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**BAT54XV2** 

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100 1000<br>TA = 150 ° C<br>100 TA = 125 ° C<br>10 150 ° C<br>10 TA = 85 ° C<br>125 ° C 1.0<br>1.0<br>85 ° C<br>25 ° C −40 ° C −55 ° C 0.1 TA = 25 ° C<br>0.1 0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>14 25<br>Based on square wave currents<br>12 TJ = 25 ° C prior to surge<br>20<br>10<br>15<br>8<br>6 10<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms)<br>A)<br>�<br>, FORWARD CURRENT (mA) , REVERSE CURRENT (<br>IF IR<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**Figure 5. Forward Surge Current** 

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**3** 

**BAT54XV2** 

## **PACKAGE DIMENSIONS** 

**SOD−523** CASE 502 ISSUE E 

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−X−<br>—oe D — −Y−<br>E<br>1 2<br>2X b<br>0.08 f M a! [o] X Y [o]<br>TOP VIEW<br>A<br>id ob<br>c JL HE<br>SIDE VIEW<br>2X L<br>2X L2 i otos e<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>TRUSIONS, OR GATE BURRS.<br>MILLIMETERS<br>DIM MIN NOM MAX<br>A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>H E 1.50 1.60 1.70<br>L 0.30 REF<br>L2 0.15 0.20 0.25<br>===e<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X 1.80<br>0.48 2X<br>0.40<br>PACKAGE<br>OUTLINE a8 DIMENSION: MILLIMETERS<br>Te<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**BAT54XV2T1/D** 

**4**