SBAT54T1G

## BAT54T1G, SBAT54T1G 

## Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

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## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

1 2 **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) CATHODE ANODE **Rating Symbol Value Unit** Reverse Voltage VR 30 V ~~a~~ **SOD−123** Forward Power Dissipation, FR−5 Board PF 2 **CASE 425** (Note 1) @ TA = 25 ° C 400 mW 1 **STYLE 1** ° Derate above 25 C ° 3.2 mW/ C ~~a~~ Thermal Resistance, R JL 174 ° C/W Junction−to−Case **MARKING DIAGRAM** ~~SC~~ Thermal Resistance, R JA 492 ° C/W Junction−to−Ambient SBM 1 Forward Current (DC) IF 200 Max mA ~~p_____}*} | ct~~ Non−Repetitive Peak Forward Current IFSM 600 mA tp < 10 msec SB = Device Code ~~PT~~ M = Date Code Repetitive Peak Forward Current IFRM 300 mA = Pb−Free Package Pulse Wave = 1 sec, Duty Cycle =  66% (Note: Microdot may be in either location) Junction Temperature TJ −55 to 125 ° C ~~———~~ Storage Temperature Range Tstg −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the **ORDERING INFORMATION** device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **Device Package Shipping**[†] 1. FR-5 = 1.0 x 0.75 x 0.062 in. 

|**Device**|**Package**|**Shipping**[†]|
|---|---|---|
|BAT54T1G|SOD−123<br>(Pb−Free)|3000 / Tape & Reel|
|SBAT54T1G|SOD−123<br>(Pb−Free)|3000 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2014 − Rev. 10** 

**BAT54T1/D** 

## **BAT54T1G, SBAT54T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage<br>(VR= 25 V)|IR|−|0.5|2.0|�Adc|
|Forward Voltage<br>(IF= 0.1 mAdc)|VF|−|0.22|0.24|Vdc|
|Forward Voltage<br>(IF= 30 mAdc)|VF|−|0.41|0.5|Vdc|
|Forward Voltage<br>(IF= 100 mAdc)|VF|−|0.52|0.8|Vdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)|trr|−|−|5.0|ns|
|Forward Voltage<br>(IF= 1.0 mAdc)|VF|−|0.29|0.32|Vdc|
|Forward Voltage<br>(IF= 10 mAdc)|VF|−|0.35|0.40|Vdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820  �<br>+10 V 2 k<br>100  � H IF 0.1  � F tr t p t IF<br>0.1  � F 10% t rr t<br>DUT<br>50  �  Output 50  �  Input 90%<br>Pulse Sampling iR(REC) = 1 mA<br>Generator Oscilloscope VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**BAT54T1G, SBAT54T1G** 

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100<br>125 ° C<br>85 ° C<br>10<br>150 ° C<br>1.0<br>25 ° C −40 ° C −55 ° C<br>0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

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1000<br>TA = 150 ° C<br>100<br>TA = 125 ° C<br>10<br>1.0<br>TA = 85 ° C<br>0.1<br>0.01 TA = 25 ° C<br>0.001<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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**3** 

**BAT54T1G, SBAT54T1G** 

## **PACKAGE DIMENSIONS** 

**SOD−123** CASE 425−04 ISSUE G 

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D<br>A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>A1 Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>1<br>MILLIMETERS INCHES<br>ÂÂÂ DIM MIN NOM MAX MIN NOM MAX<br>A 0.94 1.17 1.35 0.037 0.046 0.053<br>ÂÂÂ A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.51 0.61 0.71 0.020 0.024 0.028<br>HE E c --- --- 0.15 --- --- 0.006<br>D 1.40 1.60 1.80 0.055 0.063 0.071<br>E 2.54 2.69 2.84 0.100 0.106 0.112<br>HE 3.56 3.68 3.86 0.140 0.145 0.152<br>L 0.25 --- --- 0.010 --- ---<br>0° --- 10° 0° --- 10°<br>2<br>ot<br>STYLE 1:<br>b L PIN 1. CATHODE2. ANODE<br>i ne C - iaeeeee<br>SOLDERING FOOTPRINT*<br>0.91<br>0.036<br>ÉÉ ÉÉ<br>ÉÉ ÉÉ 0.0481.22<br>1<br>ÉÉ ÉÉ<br>2.36<br>0.093<br>4.19<br>0.165<br>SCALE 10:1 mm<br>prot inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**BAT54T1/D** 

**4**