SBAT54ALT3G

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## Schottky Barrier Diodes 

## **30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** 

## BAT54AL 

These Schottky barrier diodes are designed for high speed switching **DIODES** applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount CATHODE ANODE package is excellent for hand held and portable applications where 1 space is limited. 3 2 CATHODE **Features** ~~ee~~ 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**SOT−23 (TO−236) CASE 318 STYLE 12** 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **STYLE 12** Compliant **MARKING DIAGRAM MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **Rating Symbol Value Unit** B6M Reverse Voltage VR 30 V Forward Power Dissipation PF 1 @ TA = 25 ° C 225 mW Derate above 25 ° C 1.8 mW/ ° C B6 = Device Code M = Date Code* Forward Current (DC) IF 200 Max mA = Pb−Free Package Non−Repetitive Peak Forward Currenttp < 10 msec IFSM 600 mA (Note: Microdot may be in either location) * Repetitive Peak Forward Current IFRM mA Pulse Wave = 1 sec, 300 tion. Duty Cycle =  66% **ORDERING INFORMATION** Junction Temperature TJ −55 to 150 ° C ~~=~~ Storage Temperature Range Tstg −55 to +150 ° C **Device** ~~:~~ **Package** BAT54ALT1G SOT−23 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. SBAT54ALT1G SOT−23 

(Note: Microdot may be in either location) 

- Date Code orientation and/or overbar may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**<br>|**Package**<br>~~:~~|**Shipping**†<br>~~:~~|
|---|---|---|
|BAT54ALT1G<br>|SOT−23<br>(Pb−Free)<br> ~~:~~|3,000/Tape & Reel<br>~~:~~|
|SBAT54ALT1G|SOT−23<br>(Pb−Free)|3,000/Tape & Reel|
|SBAT54ALT3G|SOT−23<br>(Pb−Free)|10,000/Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1997 **November, 2024 − Rev. 16** 

**BAT54ALT1/D** 

**BAT54AL** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) 

|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Reverse Breakdown Voltage<br>(IR= 10 A)<br>V(BR)R<br>30<br>−<br>−<br>V<br>Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)<br>CT<br>−<br>7.6<br>10<br>pF<br>Reverse Leakage<br>(VR= 25 V)<br>IR<br>−<br>0.2<br>2.0<br>Adc<br>Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)<br>VF<br>−<br>−<br>−<br>−<br>−<br>0.22<br>0.29<br>0.35<br>0.41<br>0.52<br>0.24<br>0.32<br>0.40<br>0.50<br>0.80<br>V<br>Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)<br>trr<br>−<br>−<br>5.0<br>ns<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~rs~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee ee~~<br>~~TTL~~<br>~~a~~<br>~~ee ee ee~~|
|---|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|
|820<br>Q|
|+10 V<br>2 k<br>0.1 F<br>100 H<br>0.1 F<br>tr<br>~~tp~~<br>T<br>10%<br>IF<br>~~trr~~<br>T<br>IF<br>aa<br>‘~~To~~<br>~~sk aA~~<br>m<br>7<br>—~~-~~|
||
|DUT|
|50 OUTPUT<br>50  INPUT<br>90%|
|VR<br>PULSE<br>GENERATOR<br>SAMPLING<br>OSCILLOSCOPE<br>IR<br>iR(REC)= 1 mA<br>OUTPUT PULSE<br>(IF= IR= 10 mA; measured<br>at iR(REC)= 1 mA)<br>INPUT SIGNAL|
|Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.|
|2. Input pulse is adjusted so IR(peak)is equal to 10 mA.|
|3. tp» trr|



**Figure 1. Recovery Time Equivalent Test Circuit** 

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**BAT54AL** 

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**----- Start of picture text -----**<br>
100<br>125 ° C<br>— 85 ° C $$SSSSI /--w2<br>10<br>——— 150 ° C ef =FS|E<br>ly oy Aan oe | i<br>1.0<br>— fff<br>ee 25 ° C −40 ° C −55 ° C<br>0.1<br>L/7/ if tf [1 r—<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage<br>1000<br>TA = 150 ° C<br>100 === SSS TA = 125 ° C<br>10 TA = 85 ° C<br>SSS SSS<br>1<br>eee<br>0.1 a = ——— ae TA = 25 ° C<br>0.01 SSSa SS SS SSS<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>A)<br>μ<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>pS ff<br>2<br>0<br>pot 0 5 tT 10 tf} 15 20 | 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**----- Start of picture text -----**<br>
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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