SBAS70-04LT1G

BAS70-04L 

## Schottky Barrier Diode 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

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## **Features** 

## **70 VOLTS SCHOTTKY BARRIER DIODE** 

- Extremely Fast Switching Speed 

- Low Forward Voltage 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

ANODE CATHODE PPAP Capable 1 2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ~~-~~ 3 Compliant CATHODE/ANODE **MAXIMUM RATINGS** (TJ = 150 ° C unless otherwise noted) 3 **Rating Symbol Value Unit** 1 ~~2~~ Forward Current IF 70 mA 2 **SOT−23 (TO−236)** Non−Repetitive Peak Forward Surge IFSM 100 mA **CASE 318** Current (t ≤ 1.0 s) **STYLE 11** Reverse Voltage VR 70 V **THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit** Forward Power Dissipation PF CG M @ TA = 25 ° C 225 mW Derate above 25 ° C 1.8 mW/ ° C ~~— Ee ;~~ 1 Thermal Resistance − Junction−to−Ambient R JA ° C/W (Note 1) 508 CG =  Specific Device Code (Note 2) 311 M = Date Code* Operating Junction and Storage TJ, Tstg −55 to ° C = Pb−Free Package Temperature Range +150 (Note: Microdot may be in either location) 

(Note: Microdot may be in either location) 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. 

**ORDERING INFORMATION Device Package Shipping**[†] BAS70−04LT1G SOT−23 3000 / Tape & (Pb−Free) Reel SBAS70−04LT1G SOT−23 3000 / Tape & (Pb−Free) Reel ~~Ft~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1997 **November, 2018 − Rev. 13** 

**BAS70−04LT1/D** 

**BAS70−04L** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Reverse Breakdown Voltage<br>(IR= 10μA)|V(BR)R|70|−|V|
|Total Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CT|−|2.0|pF|
|Reverse Leakage<br>(VR= 50 V)<br>(VR= 70 V)|IR|−<br>−|0.1<br>10|�A|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 15 mA)|VF|−<br>−<br>−|410<br>750<br>1000|mV|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 150°C<br>10 125°C<br>10<br>1.0<br>85°C<br>0.1<br>1.0 150°C<br>1�25°C<br>-�40°C 0.01<br>85°C 25°C<br>25°C -�55°C<br>0.1 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5.0 10 15 20 25 30 35 40 45 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Reverse Current versus Reverse Voltage** 

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1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>CT, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Capacitance** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>**----- End of picture text -----**<br>


## DATE 30 JAN 2018 

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SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM �<br>�<br>1<br>2.90 0.903X XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*This information is generic. Please refer to<br>3X 0.80 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “  � ”,<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


**DOCUMENT NUMBER: 98ASB42226B** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: SOT−23 (TO−236) 1 PAGE 1 OF 2XXX** 

|~~eT ©~~|~~eT ©~~|**DOCUMENT NUMBER:**<br>**98ASB42226B**<br>**PAGE 2 OF 2**<br>~~——~~|**DOCUMENT NUMBER:**<br>**98ASB42226B**<br>**PAGE 2 OF 2**<br>~~——~~|
|---|---|---|---|
|**ISSUE**|**REVISION**||**DATE**|
|AJ|ADDED STYLE 27. REQ. BY P. LEM.||07 JUL 2004|
|AK|OBSOLETED −09 VERSION. REQ. BY D. TRUHITTE.||14 SEP 2004|
|AL|ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ.||27 MAY 2005|
||BY HONG XIAO.|||
|AM|REDREW LEAD SIDE VIEW. REQ BY DARRELL TRUHITTE.||26 AUG 2005|
|AN|REINTRODUCED LABELS FOR DIMENSION C. REQ. BY D. TRUHITTE.||14 OCT 2005|
|AP|ADDED THETA DEGREE VALUES TO DIMENSION TABLE. REQ. BY D. TRUHITTE.|ADDED THETA DEGREE VALUES TO DIMENSION TABLE. REQ. BY D. TRUHITTE.|17 NOV 2009|
|AR|MODIFIED DIMENSIONS C AND L. REQ. BY M. YOU.||10 OCT 2016|
|AS|ADDED STYLE 28. REQ. BY E. ESTILLER.||30 JAN 2018|



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Case Outline Number: 

© Semiconductor Components Industries, LLC, 2018 **January, 2018 − Rev. AS** 

**318** 

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