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SBAS20LT1G
Small Signal Diode, Single, 200 V, 200 mA, 1.25 V, 50 ns, 2 A
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- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Cur
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 2A
- Reverse Recovery Time: 50ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.029 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## BAS19L, BAS20L, BAS21L, BAS21DW5 ## High Voltage Switching Diode ## **Features** **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **HIGH VOLTAGE SWITCHING DIODE** - S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [86 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23<br>3 o—lq—o 1<br>CATHODE ANODE<br>SC−88A<br>5 —q- 1<br>CATHODE ANODE<br>4 oq 3<br>CATHODE ANODE<br>**----- End of picture text -----**<br> ## **MAXIMUM RATINGS** **==> picture [454 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |Rating|Symbol|Value|Unit|CATHODE|ANODE| |Continuous Reverse Voltage|VR|Vdc| |BAS19|120|SC−88A| |BAS20|200|5|—q-|1| |250| |BAS21|CATHODE|ANODE| |Repetitive Peak Reverse Voltage|VRRM|Vdc|4|oq|3| |BAS19|120|CATHODE|ANODE| |BAS20|200| |250| |BAS21| |Continuous Forward Current|IF|200|mAdc| |3| |Peak Forward Surge Current|IFSM|2|A|3| |(1/2 Cycle, Sine Wave, 60 Hz)| |1|Jx M| |Repetitive Peak Forward Current|IFRM|0.6|A|°| |2| |(Pulse Train: TON = 1 s, TOFF = 0.5 s)| |1|2| |Junction and Storage Temperature|TJ, Tstg|−55 to +150|°|C|SOT−23 (TO−236)CASE 318| |Range| |STYLE 8| |Power Dissipation (Note 1)|PD|385|mW| |Electrostatic Discharge|ESD|HM < 500|V|5|||4|i| |Jx M| |MM < 400|V| |3| |Stresses exceeding those listed in the Maximum Ratings table may damage the|1|1|in|2|im|3|i| |device. If any of these limits are exceeded, device functionality should not be|SC−88A (SOT−353)| |assumed, damage may occur and reliability may be affected.|CASE 419A| **----- End of picture text -----**<br> ## **MARKING DIAGRAMS** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 1999 **November, 2016 − Rev. 18** **BAS19LT1/D** **BAS19L, BAS20L, BAS21L, BAS21DW5** ## **THERMAL CHARACTERISTICS (SOT−23)** |**THERMAL CHARACTERISTICS (SOT−23)**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Total Device Dissipation FR−5 Board<br>(Note 2)<br>TA= 25°C<br>Derate above 25°C|PD|225<br>1.8|mW<br>mW/°C| |Thermal Resistance<br>Junction−to−Ambient (SOT−23)|R�JA|556|°C/W| |Total Device Dissipation Alumina Substrate<br>(Note 3)<br>TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C| |Thermal Resistance Junction−to−Ambient|R�JA|417|°C/W| |Junction and Storage<br>Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−88A)**|||| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Power Dissipation (Note 4)|PD|385|mW| |Thermal Resistance −<br>Junction−to−Ambient<br>Derate Above 25°C|R�JA|328<br>3.0|°C/W<br>mW/°C| |Maximum Junction Temperature|TJmax|150|°C| |Operating Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 2. FR−5 = 1.0 � 0.75 � 0.062 in. 3. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |Reverse Voltage Leakage Current<br>(VR= 100 Vdc)<br>BAS19<br>(VR= 150 Vdc)<br>BAS20<br>(VR= 200 Vdc)<br>BAS21<br>(VR= 100 Vdc, TJ= 150°C)<br>BAS19<br>(VR= 150 Vdc, TJ= 150°C)<br>BAS20<br>(VR= 200 Vdc, TJ= 150°C)<br>BAS21|IR|−<br>−<br>−<br>−<br>−<br>−|0.1<br>0.1<br>0.1<br>100<br>100<br>100|�Adc| ||V(BR)|120<br>200<br>250|−<br>−<br>−|Vdc| |Reverse Breakdown Voltage<br>(IBR= 100�Adc)<br>BAS19<br>(IBR= 100�Adc)<br>BAS20<br>(IBR= 100�Adc)<br>BAS21||||| |||||| |Forward Voltage<br>(IF= 100 mAdc)<br>(IF= 200 mAdc)|VF|−<br>−|1.0<br>1.25|Vdc| |Diode Capacitance (VR= 0, f = 1.0 MHz)|CD|−|5.0|pF| |Reverse Recovery Time (IF= IR= 30 mAdc, IR(REC)= 3.0 mAdc, RL= 100)|trr|−|50|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **BAS19L, BAS20L, BAS21L, BAS21DW5** **==> picture [484 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT IR(REC) = 3.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 30 mA; MEASURED<br>at IR(REC) = 3.0 mA)<br>**----- End of picture text -----**<br> Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr **Figure 1. Recovery Time Equivalent Test Circuit** **==> picture [487 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10 150°C<br>150°C<br>125°C<br>125°C<br>1.0<br>85°C<br>10<br>55°C 85°C<br>25°C 0.1<br>55°C<br>1.0<br>0.01<br>-55°C 25°C<br>-40°C<br>0.1 0.001<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 20 50 80 110 140 170 200 230 260<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. VF vs. IF Figure 3. IR vs. VR<br>1.6 30<br>1.4 Cap 25 Based on square wave currentsT J = 25°C prior to surge<br>1.2 20<br>1.0 15<br>0.8 10<br>0.6 5<br>0.4 0<br>0 1 2 3 4 5 6 7 8 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tp, PULSE ON TIME (ms)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br> **Figure 4. Capacitance** **Figure 5. Forward Surge Current** **www.onsemi.com** **3** **BAS19L, BAS20L, BAS21L, BAS21DW5** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |BAS19LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |BAS19LT3G|SOT−23<br>(Pb−Free)|10000 / Tape & Reel| |NSVBAS19LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |BAS20LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |BAS20LT3G|SOT−23<br>(Pb−Free)|10000 / Tape & Reel| |NSVBAS20LT3G*|SOT−23<br>(Pb−Free)|10000 / Tape & Reel| |SBAS20LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |BAS21LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |SBAS21LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |BAS21LT3G|SOT−23<br>(Pb−Free)|10000 / Tape & Reel| |SBAS21LT3G*|SOT−23<br>(Pb−Free)|10000 / Tape & Reel| |BAS21DW5T1G|SC−88A<br>(Pb−Free)|3000 / Tape & Reel| |SBAS21DW5T1G*|SC−88A<br>(Pb−Free)|3000 / Tape & Reel| |SBAS21DW5T3G*|SC−88A<br>(Pb−Free)|10000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **4** **BAS19L, BAS20L, BAS21L, BAS21DW5** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [469 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 8:<br>END VIEW PIN 1. ANODE<br>2. NO CONNECTION<br>3. CATHODE<br>**----- End of picture text -----**<br> **RECOMMENDED** **SOLDERING FOOTPRINT** **==> picture [142 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> 3X<br>2.90 0.90<br>3X 0.80 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> **www.onsemi.com** **5** **BAS19L, BAS20L, BAS21L, BAS21DW5** ## **PACKAGE DIMENSIONS** **SC−88A (SC−70−5/SOT−353)** CASE 419A−02 ISSUE L **==> picture [311 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> A NOTES:<br>1.<br>G<br>2.<br>3.<br>4.<br>5 4<br>S −B−<br>1 2 3 DIM<br>A<br>B<br>ueant C<br>D<br>D 5 PL 0.2 (0.008) M B M G<br>H<br>“ J<br>N K<br>N<br>S<br>J<br>C<br>Mt, i<br>L H ‘JA K li<br>SOLDER FOOTPRINT<br>0.50<br>0.0197<br>0.65<br>a .<br>0.025<br>0.65<br>0.025<br>0.40<br>0.0157<br>a<br>+ 1.9<br>0.0748 SCALE 20:1 mm<br>(—) inches<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. |**DIM**<br>**A**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**<br>0.071|**MAX**<br>0.087|**MIN**<br>1.80|**MAX**<br>2.20| |**A**|0.071|0.087|1.80|2.20| |**B**|0.045|0.053|1.15|1.35| |**C**<br>==o=|0.031<br>==o=|0.043<br>==o=|0.80<br>==o=|1.10<br>==o=| |**D**<br>==o=|0.004<br>==o=|0.012<br>==o=|0.10<br>==o=|0.30<br>==o=| |**G**<br>==o=|0.026 BSC<br>==o=||0.65 BSC<br>==o=|| |**G**<br>**H**<br>==o=|0.026 BSC<br>---<br>==o=|0.026 BSC<br>0.004<br>==o=|0.65 BSC<br>---<br>==o=|0.65 BSC<br>0.10<br>==o=| |**H**<br>**J**<br>==o=|0.004<br>==o=|0.004<br>0.010<br>==o=|0.10<br>==o=|0.10<br>0.25<br>==o=| |**K**<br>==o=<br>Ta|0.004<br>==o=<br>Ta|0.012<br>==o=<br>Ta|0.10<br>==o=<br>Ta|0.30<br>==o=<br>Ta| |**N**<br>Ta|0.008 REF<br>Ta||0.20 REF<br>Ta|| |**S**<br>Ta|0.079<br>Ta|0.087<br>Ta|2.00<br>Ta|2.20<br>Ta| ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com ◊ **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com** **BAS19LT1/D** **6**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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