SBAS20HT1G

## BAS20H 

## High Voltage Switching Diode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

~~ee~~ **Rating Symbol** ~~ee Ge~~ **Value Unit** ~~ee~~ Continuous Reverse Voltage VR 200 Vdc Repetitive Peak Reverse Voltage VRRM 200 Vdc ~~ee ee Ge~~ Continuous Forward Current ~~ee~~ IF 200 ~~ee~~ mAdc ~~eeee Ge ee~~ Peak Forward Surge Current IFM(surge) 625 mAdc Repetitive Peak Forward Current IFRM 500 mA (Pulse Wave = 1 sec, Duty Cycle = 66%) ~~ee ee Ge~~ Non−Repetitive Peak Forward Current ~~a~~ IFSM A (Square Wave, TJ = 25 ° C prior to surge) t = 1 s 5.0 t = 1 ms 2.0 t = 1 s 0.5 ~~eff~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board* PD TA = 25 ° C 200 mW Derate above 25 ° C 1.57 mW/ ° C Thermal Resistance Junction−to−Ambient R JA 635 ° C/W ~~eeee~~ Junction and Storage Temperature Range TJ, Tstg −55 to ° C +150 ~~a ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

*FR−5 Minimum Pad 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

**Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** Reverse Voltage Leakage Current IR (VR = 200 Vdc) − 1.0 Adc (VR = 200 Vdc, TJ = 150 ° C) − 100 ~~Pe~~ Reverse Breakdown Voltage V(BR) (IBR = 100 Adc) 250 − Vdc ~~re~~ Forward Voltage VF (IF = 100 mAdc) − 1000 mV (IF = 200 mAdc) − 1250 ~~|~~ Diode Capacitance CD − 5.0 pF (VR = 0, f = 1.0 MHz) ~~ee~~ Reverse Recovery Time trr − 50 ns (IF = IR = 30 mAdc, RL = 100 ) ~~TET~~ 

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## **HIGH VOLTAGE SWITCHING DIODE** 

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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


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2<br>1<br>SOD−323 tflU”®™<br>CASE 477<br>STYLE 1<br>**----- End of picture text -----**<br>


**MARKING DIAGRAM** JR M ~~a:~~ JR = Specific Device Code M = Date Code* = Pb−Free Package 

(Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BAS20HT1G|SOD−323<br>(Pb−Free)|3000 / Tape & Reel|
|SBAS20HT1G|SOD−323<br>(Pb−Free)|3000 / Tape & Reel|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **December, 2014 − Rev. 7** 

**BAS20HT1/D** 

**BAS20H** 

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820  �<br>+10 V 2.0 k 0.1  � F tr t p t IF<br>100  � H IF 10% t rr t<br>0.1  � F<br>D.U.T. 90%<br>50  �  Output 50  �  Input IR iR(REC) = 3.0 mA<br>Pulse Sampling VR OUTPUT PULSE<br>Generator Oscilloscope INPUT SIGNAL (IF = IR = 30 mA; MEASURED<br>at iR(REC) = 3.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 30 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.<br>Notes: 3. tp » trr<br>Figure 1. Recovery Time Equivalent Test Circuit<br>1000 100<br>150 ° C 125 ° C<br>10 55 ° C<br>100<br>1.0<br>10 55 ° C 25 ° C<br>0.1<br>125 ° C 25 ° C<br>1.0<br>0.01<br>150 ° C −40 ° C<br>−40 ° C<br>0.1 0.001<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 300<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Current Figure 3. Leakage Current<br>2.0<br>1.8<br>1.6 f = 1 MHz<br>IE = 0 A<br>1.4 TA = 25 ° C<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5.0 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (V)<br>�<br>, REVERSE CURRENT (   A)<br>, FORWARD CURRENT (mA) R<br>IF I<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

DATE 13 MAR 2007 

**SOD−323** CASE 477−02 ISSUE H 

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a 2 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>HE<br>D<br>=<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.63<br>0.025<br>se<br>0.83<br>0.033<br>1.60<br>Ua<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

5. DIMENSION L IS MEASURED FROM END OF RADIUS. 

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MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Pt —— —*| 4 ]<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


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XX M XX M<br>qf p 2:<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB17533C** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−323 PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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