SBAS16WT1G

## BAS16WT1G 

## Silicon Switching Diode 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **http://onsemi.com** 

3 1 CATHODE ANODE 

**MAXIMUM RATINGS** (TA = 25 ° C) 

**Rating Symbol Value Unit** Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IR 200 mA ~~——~~ Peak Forward Surge Current IFM(surge) 500 mA Pulse Width = 10 s ~~a~~ Total Power Dissipation, ~~ee eee~~ One Diode Loaded TA = 25 ° C PD 200 mW Derate above 25 ° C Mounted on a Ceramic Substrate 1.6 mW/ ° C (10 x 8 x 0.6 mm) ~~pt~~ Operating and Storage Junction TJ, Tstg −55 to ° C Temperature Range +150 ~~po~~ 

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MARKING<br>DIAGRAM<br>A6 M<br>SC−70<br>CASE 419<br>STYLE 2 1<br>a<br>A6 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(*Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended **ORDERING INFORMATION** Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **Device Package Shipping**[†] **THERMAL CHARACTERISTICS** BAS16WT1G SC−70 3000 / Tape & Reel (Pb−Free) **Characteristic Symbol Max Unit** SBAS16WT1G SC−70 3000 / Tape & Reel Thermal Resistance, ° (Pb−Free) Junction−to−Ambient R JA 625 C/W One Diode Loaded NSVBAS16WT3G SC−70 10000 / Tape & Mounted on a Ceramic Substrate (Pb−Free) Reel (10 x 8 x 0.6 mm) †For information on tape and reel specifications, ~~pT ==~~ including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BAS16WT1/D** 

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© Semiconductor Components Industries, LLC, 2014 **March, 2014− Rev. 11** 

## **BAS16WT1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>866<br>1000<br>1250|mV|
|Reverse Current<br>(VR= 100 V)<br>(VR= 75 V, TJ= 150°C)<br>(VR= 25 V, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>50<br>30|�A|
|Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 50�) (Figure 1)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10 mA to VR= 6.0 V, RL= 500�) (Figure 2)|QS|−|45|PC|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns) (Figure 3)|VFR|−|1.75|V|



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**BAS16WT1G** 

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1 ns MAX<br>t 500 � DUT<br>10% trr<br>tif<br>50 �<br>DUTY CYCLE = 2%<br>90%<br>VF Irr<br>100 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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OSCILLOSCOPE<br>R  �  10 M �<br>C  �  7 pF<br>VC 500 � DUT BAW62<br>20 ns MAX VCM<br>t D1 243 pF 100 K�<br>10%<br>VCM � [Qa]<br>C<br>DUTY CYCLE = 2%<br>t<br>90%<br>Vf<br>400 ns<br>**----- End of picture text -----**<br>


**Figure 2. Stored Charge Equivalent Test Circuit** 

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V<br>120 ns<br>1 K� 450 �<br>V<br>90%<br>DUT 50 �<br>Vfr<br>10% t<br>DUTY CYCLE = 2%<br>2 ns MAX<br>**----- End of picture text -----**<br>


**Figure 3. Forward Recovery Voltage Equivalent Test Circuit** 

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## **BAS16WT1G** 

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100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage** 

**Figure 5. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SC−70 (SOT−323)<br>CASE 419−04<br>ISSUE N<br>® DATE 11 NOV 2008<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i an ) = D 1.80 2.10 2.20 0.071 0.083 0.087<br>j an ) ==<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c<br>GENERIC<br>0.05 (0.002) L MARKING DIAGRAM<br>_ —_ He A1 , Joka<br>SOLDERING FOOTPRINT* XX M<br>0.65<br>oe 0.65 0.025 1 =<br>0.025<br>XX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>1.9 *This information is generic. Please refer to<br>oe<br>0.075 device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>0.9 may or may not be present.<br>0.035<br>0.7<br>0.028<br>SCALE 10:1 mm<br>~ ~ = inches<br>**----- End of picture text -----**<br>


DATE 11 NOV 2008 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. EMITTER 2. CATHODE  2. ANODE<br>3. CATHODE 3. COLLECTOR 3. ANODE  3. CATHODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. BASE  2. EMITTER  2. SOURCE  2. CATHODE  2. ANODE 2. CATHODE<br> 3. COLLECTOR  3. COLLECTOR  3. DRAIN  3. CATHODE-ANODE  3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42819B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1** ~~[_eo~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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