SBAS16HT3G

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## Switching Diode 

## BAS16H 

1 

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**SOD−323 CASE 477 STYLE 1** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

1 2 

CATHODE ANODE 

**MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit** ~~es ee~~ Continuous Reverse Voltage VR 100 V ~~es~~ Peak Forward Current IF 200 mA A6  M ~~a ee | a:~~ Non−Repetitive Peak Forward Surge IFSM(surge) 1.8 A Current, 60 Hz A6 = Specific Device Code ~~ee eee~~ Repetitive Peak Forward Current IFRM 1.0 A M = Date Code (Note 2) Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25 ° C prior to **ORDERING INFORMATION** surge) t = 1 s 36.0 **Device Package Shipping** † t = 10 s 18.0 t = 100 s 6.0 BAS16HT1G SOD−323 3000 / Tape & Reel t = 1 ms 3.0 (Pb−Free) t = 10 ms 1.8 t = 100 ms 1.3 SBAS16HT1G SOD−323 3000 /T ape & Reel t = 1 s 1.0 (Pb−Free) ESD Rating: Human Body Model ESD Class 3A BAS16HT3G SOD−323 10000 / Tape & Reel Machine Model Class M4 (Pb−Free) Charged Device Model Class C3 SBAS16HT3G SOD−323 10000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free) Ratings are stress ratings only. Functional operation above the Recommended ~~anil ==~~ Operating Conditions is not implied. Extended exposure to stresses above the †For information on tape and reel specifications, Recommended Operating Conditions may affect device reliability. 

**MARKING DIAGRAM** ~~ee~~ A6  M ~~| a:~~ A6 = Specific Device Code M = Date Code 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR-5 Board<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|200<br>1.57|mW<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA|635<br>~~eee~~|°C/W<br>~~eee~~|
|Junction and Storage Temperature<br>~~ee~~|TJ, Tstg<br>~~ee~~|−55 to<br>150<br>~~ee~~<br>~~eee~~|°C<br>~~ee~~<br>~~eee~~|



2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25 ° C prior to surge. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2024 − Rev. 14** 

**BAS16HT1/D** 

## **BAS16H** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**OFF CHARACTERISTICS**|||||
|---|---|---|---|---|
|Reverse Voltage Leakage Current<br>(VR= 100 Vdc)<br>(VR= 75 Vdc, TJ= 150°C)<br>(VR= 25 Vdc, TJ= 150°C)<br>~~eee~~|IR<br>~~eee~~|−<br>−<br>−<br>~~eee~~|1.0<br>50<br>30<br>~~eee~~|Adc<br>~~eee~~|
|Reverse Breakdown Voltage<br>(IBR= 100 Adc)<br>~~CT~~<br>~~TTC«wSECSEC~~|V(BR)<br>~~TTC«wSECSEC~~|100<br>~~TTC«wSECSEC~~|−<br>~~TTC«wSECSEC~~|Vdc<br>~~TTC«wSECSEC~~|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)<br>~~CT~~<br>~~TTC«wSECSEC~~|VF<br>~~TTC«wSECSEC~~<br>~~ee~~|−<br>−<br>−<br>−<br>~~TTC«wSECSEC~~<br>~~ee~~|715<br>855<br>1000<br>1250<br>~~TTC«wSECSEC~~<br>~~ee~~|mV<br>~~TTC«wSECSEC~~|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)<br>~~CT~~<br>~~ee~~<br>~~a~~|CD<br>~~ee~~<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|
|Forward Recovery Voltage<br>(IF= 10 mAdc, tr= 20 ns)<br>~~ee~~<br>~~a~~<br>~~a~~|VFR<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|−<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.75<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Vdc<br>~~ee~~<br>~~ee~~|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, RL= 50 )<br>~~a~~<br>~~ee~~<br>~~aee~~|trr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.0<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Stored Charge<br>(IF= 10 mAdc to VR= 5.0 Vdc, RL= 500 )<br>~~a~~<br>~~a ee~~|QS<br>~~ee~~<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~<br>~~ee~~|45<br>~~ee ~~<br>~~ee~~<br>~~ee~~|pC<br> ~~ee~~<br>~~ee~~|



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820  N<br>IF<br>+10 V V, 2.0 k 0.1 F a tr t p t<br>100 H ; IF + 10% t rr t<br>0.1 F m 777 [)]<br>D.U.T. 90%<br>50  OUTPUT 50  INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**BAS16H** 

## **TYPICAL CHARACTERISTICS** 

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100<br>a es ee ee ee ee eee ee eee eee<br>TA = 85°C<br>-—| — Lf f~$——<br>10 Se ee<br>TA °C<br>esoYAee ee 2TALS2 ee ee ee e e<br>1.0 _——}ee———— a AYAS YAA TA = 25°C —<br>es ee ee ee ee<br>0.1 |P| Zi A A [7ATT ft ft<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (V)<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

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10<br>TA = 150°C<br>a ee eee re es es<br>TA = 125°C<br>1.0<br>ee e e<br>EE ———<br>TA = 85°C<br>0.1 a—>S>==>>===>>======ee==eeS=>S= S S<br>—————————————— TA = 55°C<br>—— rr a eSSS<br>0.01 a a S T<br>a TA = 25°C<br>0.001 ——_—————a ee a<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (V)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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0.68 40<br>Based on square wave currents<br>Pott 35 mean GC TI TJ = 25 ° C prior to surge |<br>0.64 P| te 30 ooh<br>Pt | | Et 25 TINY ATT |<br>0.60 At ft ft ft | 20 ST TT<br>A J ft ft te 15 U ATAN TITEM T IESTAI TTTTTAEATTA T<br>u<br>0.56 10<br>5<br>0.52 Pt Ey | FS| 0 Bn ctr<br>0 2 4 6 8 0.0001 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tp (mSec)<br> (A)<br>IFSM<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOD−323 1.70x1.25x0.85** CASE 477 ISSUE K 

## DATE 11 MAR 2024 

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GENERIC<br>MARKING DIAGRAM*<br>XX M XX M<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

## **DOCUMENT NUMBER:** 

**98ASB17533C** 

## **DESCRIPTION: SOD−323 1.70x1.25x0.85** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **PAGE 1 OF 1** 

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