S3JB

## **Is Now Part of** 

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January 2016<br>**----- End of picture text -----**<br>


## **S3AB - S3MB 3 A, 50 V - 1000 V Surface Mount Rectifiers** 

## **Features** 

- Glass Passivated Chip Junction 

- High Surge Current Capacity 

- Low Forward Voltage: 1.15 V Maximum 

- UL Flammability 94V-0 Classification 

- MSL 1 per J-STD-020 

- RoHS Compliant / Green Molding Compound 

- Industrial Device Qualified per AEC-Q101 Standards 

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1<br>2<br>SMB/DO-214AA<br>                 COLOR BAND DENOTES CATHODE<br>oo 1 2<br>Cathode Anode<br>**----- End of picture text -----**<br>


- See authorized use policy 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|S3AB|S3AB|DO-214AA (SMB)|Tape and Reel|
|S3BB|S3BB|DO-214AA (SMB)|Tape and Reel|
|S3DB|S3DB|DO-214AA (SMB)|Tape and Reel|
|S3GB|S3GB|DO-214AA (SMB)|Tape and Reel|
|S3JB|S3JB|DO-214AA (SMB)|Tape and Reel|
|S3KB|S3KB|DO-214AA (SMB)|Tape and Reel|
|S3MB|S3MB|DO-214AA (SMB)|Tape and Reel|



© 2015 Fairchild Semiconductor Corporation S3AB - S3MB Rev. 1.1 

www.fairchildsemi.com 

## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|
|||**S3AB**|**S3BB**|**S3DB**|**S3GB**|**S3JB**|**S3KB**|**S3MB**||
|VRRM|Repetitive Peak Reverse Voltage|50|100|200|400|600|800|1000|V|
|VRMS|RMS Reverse Voltage|35|70|140|280|420|560|700|V|
|VR|DC Blocking Voltage|50|100|200|400|600|800|1000|V|
|IF(AV)|Average Forward Rectified Current|3|||||||A|
|IFSM|Peak Forward Surge Current: 8.3 ms Sin-<br>gle Half Sine-Wave Superimposed on<br>Rated Load|80|||||||A|
|TJ|Operating Junction Temperature Range|-55 to +150|||||||°C|
|TSTG|Storage Temperature Range|-55 to +150|||||||°C|



## **Thermal Characteristics**[(1)] 

Values are at TA = 25°C unless otherwise noted. 

|Values are at TA = 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RθJA|Typical Thermal Resistance, Junction-to-Ambient|148|°C/W|
|ψJL|Typical Thermal Characteristics, Junction-to-Lead|14|°C/W|



## **Note:** 

1. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm per JESD51-3. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at TA = 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VF|Instantaneous Forward Voltage(2)|IF= 3 A|||1.15|V|
|IR|Reverse Current at Rated VR|TJ= 25°C|||10|μA|
|||TJ= 125°C|||250||
|Trr|Reverse Recovery Time|IF= 0.5 A, IR= 1 A,<br>Irr= 0.25 A||1.5||μs|
|CJ|Junction Capacitance|VR= 4 V, f = 1 MHz||40||pF|



## **Note:** 

2. Pulse test with PW = 300 μs, 1% duty cycle 

© 2015 Fairchild Semiconductor Corporation S3AB - S3MB Rev. 1.1 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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5 ee el<br>25 © 10— ——<—<—<br>TJ=125 C<br>w a OO<br>2 PoEIN 9 S a Ca S<br>Ne e e<br>1 RESISTIVE OR As<br>INDUCTIVE LOAD Ww a Oa Oe<br>eo ING zZ a a |<br>TJ=25 C<br>“ELT TT PTR 2 Cee<br>) 20 40 60 80 100 120 140 160 zi 0 20 40 60 80 100 120<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>LEAD TEMPERATURE ( [°] C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Figure 1. Forward Current Derating Curve** 

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Figure 2. Typical Reverse Characteristics<br>**----- End of picture text -----**<br>


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100<br>a<br>a<br>ee 8.3ms Single Half Sine Wave<br>-—} Pt<br>a ee ee<br>~<br>ell—~<br>0<br>4 10<br>NUMBER OF CYCLES AT 60 Hz<br>Figure 3. Maximum Non-Repetitive<br>Forward Surge Current<br>URRENT (A)<br>C<br>PEAK FORWARD SURGE<br>**----- End of picture text -----**<br>


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100 EE<br>————<br>|<br>pf<br>oJ | | | | PT |<br>———esee<br>a 2 ee<br>(LEA<br>_eS A SS GS<br>po<br>[fFee es” A ee | Pulse Width=300ps.<br>o  LLL| 1% Duty Cycle<br>06 07 08 O09 1 #114 12 13 14 15<br>FORWARD VOLTAGE (V)<br>Figure 4. Typical Forward Characteristics<br>(A)<br>INSTANTANEOUS FORWARD CURRENT<br>**----- End of picture text -----**<br>


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LN<br>a<br>eSa aSCaNS GN SGN GN<br>f=1.0MHz a<br>Vsig=50mVp-p<br>1<br>1 10<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram** 

© 2015 Fairchild Semiconductor Corporation S3AB - S3MB Rev. 1.1 

www.fairchildsemi.com 

3 

## **Physical Dimensions** 

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5.60<br>B < 4- B ~| 0.13 M C B A<br>5.08<br>2.50<br>A<br>!<br>3.95 2.20<br>B<br>3.30 1.91 2.20<br>i i]<br>!<br>Vv a 4.70 ~<br>4.75<br>B 4.05 LAND PATTERN RECOMMENDATION<br>A<br>8°<br>0°<br>2.65 MAX<br>A<br>R0.15 4X<br>AA<br>GAUGE<br>2.45<br>PLANE<br>1.90<br> 0.45<br>'!: 0.41<br>0.30 \ 0.15<br>0.203 0.05<br>B 0 -8°<br>C 0.050 !<br>A A<br>2.15 1.60<br>0.13 M C B A<br>1.65 0.75<br>DETAIL A<br>NOTES: SCALE 20 : 1<br>  A. EXCEPT WHERE NOTED CONFORMS TO<br>JEDEC DO214 VARIATION AA.<br>B DOES NOT COMPLY JEDEC STD. VALUE.<br>  C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br>  E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br>  F. LAND PATTERN STD. DIOM5336X240M.<br>  G. DRAWING FILE NAME: DO214AAREV1<br>Figure 7. 2-LEAD, SMB, JEDEC DO-214, VARIATION AA<br>**----- End of picture text -----**<br>


© 2015 Fairchild Semiconductor Corporation S3AB - S3MB Rev. 1.1 

www.fairchildsemi.com 

4 

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## **AUTHORIZED USE** 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

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|||
|---|---|
|Datasheet Identification|Product Status|
|Advance Information|Formative / In Design|
|Preliminary|First Production|
|No Identification Needed|Full Production|
|Obsolete|Not In Production|

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## **Definition** 

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 

Rev. I77 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

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