S3D

Ss SEMICONDUCTORSe **S3A – S3M** 

## Taiwan Semiconductor 

## **3A, 50V - 1000V Surface Mount Rectifier** 

## FEATURES 

- Glass passivated chip junction 

- Ideal for automated placement 

- Low forward voltage drop 

- High current capability 

- High surge current capability 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|3|A|
|VRRM|50 - 1000|V|
|IFSM|100|A|
|TJ MAX|150|°C|
|Package|DO-214AB (SMC)||
|Configuration|Single die||



## APPLICATIONS 

- Switching mode power supply (SMPS) 

- Adapters 

- Lighting application 

- Converter 

## MECHANICAL DATA 

- Case: DO-214AB (SMC) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

## **DO-214AB (SMC)** 

- Weight: 0.210g (approximately) 

## Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|---|---|---|
|PARAMETER<br>~~es~~|SYMBOL<br>~~es~~|S3A S3B S3D S3G<br>~~es~~|S3A S3B S3D S3G<br>~~es~~|S3A S3B S3D S3G<br>~~es~~|S3A S3B S3D S3G<br>~~es~~|S3J<br>~~es~~|S3K S3M UNIT<br>~~es~~|S3K S3M UNIT<br>~~es~~|S3K S3M UNIT<br>~~es~~|
|Marking code on the device<br>~~es~~|~~es~~|S3A<br>~~es~~|S3B<br>~~es~~|S3D<br>~~es~~|S3G<br>~~es~~|S3J<br>~~es~~|S3K<br>~~es~~|S3M<br>~~es~~|~~es~~|
|Repetitive peak reverse voltage<br>~~es~~|VRRM<br>~~es~~|50<br>~~es~~|100<br>~~es~~|200<br>~~es~~|400<br>~~es~~|600<br>~~es~~|800<br>~~es~~|1000<br>~~es~~|V<br>~~es~~|
|Reverse voltage, total rms value<br>~~es~~|VR(RMS)<br>~~es~~|35<br>~~es~~|70<br>~~es~~|140<br>~~es~~|280<br>~~es~~|420<br>~~es~~|560<br>~~es~~|700<br>~~es~~|V<br>~~es~~|
|Forward current<br>~~es~~|IF<br>~~ee~~<br>|3<br>~~ee~~<br>|||||||A|
|Peak forward surge current, 8.3ms<br>single half sine wave superimposed<br>on rated load<br>~~a~~<br>~~es~~<br>~~es~~|IFSM<br>~~a~~<br>~~ee~~<br>~~**ee**~~|100<br>~~a~~<br>~~ee~~<br>~~**ee**~~|||||||A<br>~~a~~|
|Junction temperature<br>~~es~~<br>~~es~~|TJ<br>~~ee~~<br>~~**ee**~~|- 55 to +150<br>~~ee~~<br>~~**ee**~~|||||||°C|
|Storage temperature<br>~~es~~<br>~~es~~|TSTG<br>~~ee~~<br>~~**ee**~~|- 55 to +150<br>~~ee~~<br>~~**ee**~~|||||||°C|



1 Version: N2102 

**S3A – S3M** 

## SEMICONDUCTOR(i 

## Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|13|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|47|°C/W|



## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|IF= 3A, TJ= 25°C|VF|-|1.15|V|
|Reverse current @ rated VR<br>(2)|TJ= 25°C|IR|-|10|µA|
||TJ= 125°C||-|250|µA|
|Junction capacitance|1MHz, VR= 4.0V|CJ|60|-|pF|
|Reverse recovery time|IF= 0.5A, IR= 1.0A,<br>Irr=0.25A|trr|1500|-|ns|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|S3x|DO-214AB (SMC)|3,000 / Tape & Reel|



## **Notes:** 

1. “x” defines voltage from 50V(S3A) to 1000V(S3M) 

2 Version: N2102 

S SEMICONDUCTOR[gee **S3A – S3M** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [480 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 100<br>TE<br>Po oo<br>TT<br>Lt [Tt] ET<br>3 a<br>ac<br>2<br>Dhset<br>1<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 10<br>25 50 75 100 125 150 0.1 1 10 100<br>LEAD TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>      Fig.3 Typical Reverse Characteristics     Fig.4 Typical Forward Characteristics<br>100 10<br>TJ=125 ° C<br>==—aae=>— —————<br>10<br>er Ae<br>——— 1 ff<br>a a ee 7 ————<br>1<br>fff | | | ft ——————<br>Pulse width 300μs<br>TJ=25 ° C 1% duty cycle<br>0.1 oeeee 0.1 UE fl<br>10 20 30 40 50 60 70 80 90 100 0.6 0.8 1.0 1.2 1.4<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (μA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.5 Maximum Non-Repetitive Forward Surge Current** 

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**----- Start of picture text -----**<br>
120<br>8.3ms single half sine wave<br>100<br>80<br>SECTS LLL<br>60 a ell<br>40 ps<br>20<br>0 Entei<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: N2102 

**S3A – S3M** [pg Taiwan Semiconductor 

SEMICONDUCTOR[pg 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: N2102 

**S3A – S3M** 

## Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-214AB (SMC)** 

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## SUGGESTED PAD LAYOUT 

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A<br>**----- End of picture text -----**<br>


## MARKING DIAGRAM 

- P/N = Marking Code 

- G = Green Compound YW = Date Code F = Factory Code 

5 Version: N2102 

**S3A – S3M** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

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Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: N2102