S3AFG-M3/I

**S3AFG, S3AFJ** 

## VISHAY, ~~—~~ 

www.vishay.com 

Vishay General Semiconductor 

## **Surface-Mount Glass Passivated Rectifier** 

## **FEATURES** 

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eSMP [® ] Series<br>**----- End of picture text -----**<br>


- Very low profile - typical height of 0.95 mm 

Available 

- Ideal for automated placement 

- Glass passivated pellet chip junction 

- Low forward voltage drop 

- Low leakage current 

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Top View Bottom View<br>SlimSMA (DO-221AC)<br>Cathode Anode<br>**----- End of picture text -----**<br>


## **LINKS TO ADDITIONAL RESOURCES** 

3D Models 

- Meets MSL level 1, per J-STD-020, LF maximum peak    of 260 °C 

- AEC-Q101 qualified available 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, and industrial applications 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|3 A|
|VRRM|400 V, 600 V|
|IFSM|50 A|
|IR|10 μA|
|VFat IF= 3 A (125 °C)|0.9|
|TJmax.|175 °C|
|Package|SlimSMA (DO-221AC)|
|Circuit configuration|Single|



## **MECHANICAL DATA** 

**Case:** SlimSMA (DO-221AC) 

Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 

Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

M3 and HM3 suffix meet JESD 201 class 2 whisker test 

**Polarity:** color band denotes cathode end 

|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**S3AFG**|**S3AFJ**|**UNIT**|
|Device markingcode||3G|3J||
|Maximum repetitive peak reverse voltage|VRRM|400|600|V|
|Maximum average forward rectified current|IF(AV) (1)|3||A|
||IF(AV) (2)|1.3||A|
|Peak forward surge current 10 ms single half sine-wave|IFSM|50||A|
|Operatingjunction and storage temperature range|TJ, TSTG|-55 to +175||°C|



## **Notes** 

> (1) Mounted on 20 mm x 20 mm pad areas, 2 oz. FR4 PCB 

> (2) Free air, mounted on recommended copper pad area 

Revision: 06-Jul-2021 

Document Number: 87207 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**S3AFG, S3AFJ** 

www.vishay.com 

Vishay General Semiconductor 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)||
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Instantaneous forward voltage|IF= 1.5 A|TJ= 25 °C|VF (1)|0.93|-|V|
||IF= 3.0 A|||1|1.1||
||IF= 1.5 A|TJ= 125 °C||0.81|-||
||IF= 3.0 A|||0.9|-||
|Max. reverse current|Rated VR|TJ= 25 °C|IR (2)|-|10|μA|
|||TJ= 125 °C||-|100||
|Typical reverse recovery time|IF= 0.5 A, IR=|1.0 A, Irr= 0.25 A|trr|2.7|-|μs|
|Typical junction capacitance|4.0 V, 1 MHz||CJ|28|-|pF|



## **Notes** 

> (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

- (2) Pulse test: Pulse width ≤ 40 ms 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise specified)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise specified)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise specified)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise specified)||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**S3AFG**|**S3AFJ**|**UNIT**|
|Typical thermal resistance|RθJA (1)(2)|130||°C/W|
||RθJM (3)|7.3|||



## **Notes** 

> (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

> (2) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint 

> (3) Thermal resistance junction-to-mount to follow JEDEC® 51-14, transient dual interface test method (TDIM) 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|S3AFJ-M3/I|0.0307|I|14 000|13" diameter plastic tape and reel|
|S3AFJHM3/I(1)|0.0307|I|14 000|13" diameter plastic tape and reel|



## **Note** 

- (1) AEC-Q101 qualified 

Revision: 06-Jul-2021 

Document Number: 87207 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**S3AFG, S3AFJ** 

www.vishay.com 

## Vishay General Semiconductor 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise specified) 

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3.6 10000 1000<br>3.2 RthJM = 7.3  ° C/W TJ = 175 °C<br>100<br>2.8<br>10<br>2.4 1000 TJ = 125 °C TJ = 150 °C<br>2 1<br>1.6 R thJA = 130 °C/W 0.1 TJ = 75 °C<br>1.2 100 T J = 25  ° C<br>0.01<br>0.8<br>0.001<br>0.4 T terminal mount typical valuesM measured at cathode TJ = -40 °C<br>0 10 0.0001<br>0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100<br>Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%)<br>Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode<br>Axis Title Axis Title<br>3.5 10000 100<br>TJ = 25 °C<br>f = 1.0 MHz<br>3.0 Vsig = 50 mVp-p<br>2.5 D = 0.3<br>1000<br>D = 0.2<br>2.0 D = 1.0<br>10<br>1.5 D = 0.1 D = 0.8<br>100<br>1.0 D = 0.5 T<br>0.5<br>D = tp/T tp<br>0 10 1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 100<br>Average Forward Current (A) Reverse Voltage (V)<br>Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance<br>Axis Title Axis Title<br>10000 1000<br>TJ = 175 °C Junction to ambient<br>10<br>T J = 150 °C 1000 100<br>T J = 125 °C<br>TJ = 75 °C<br>1<br>100 10<br>T J = 25 °C<br>TJ = -40 °C<br>0.1 10 1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100<br>Instantaneous Forward Voltage (V) t - Pulse Duration (s)<br>1st line 2nd line 2nd line<br>Average Forward Rectified Current (A) Instantaneous Reverse Current (µA)<br>1st line 2nd line 2nd line<br>Average Power Loss (W) Junction Capacitance (pF)<br>1st line 2nd line 2nd line<br>Instantaneous Forward Current (A)<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 

Fig. 3 - Typical Instantaneous Forward Characteristics 

Fig. 6 - Typical Transient Thermal Impedance 

Revision: 06-Jul-2021 

Document Number: 87207 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**S3AFG, S3AFJ** 

Vishay General Semiconductor 

www.vishay.com 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

**SlimSMA (DO-221AC)** Cathode Band 0.106 (2.70) 0.057 (1.45) 0.098 (2.50) 0.049 (1.25) ~~+ -~~ 0.171 (4.35) 0.047 (1.20) Typ.: 0.019 (0.48) ~~a~~ 0.163 (4.15) 0.030 (0.75) 0.211 (5.35) 0.199 (5.05) **Mounting Pad Layout** 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) 0.012 (0.30) MIN. 0.006 (0.15) ~~a epee~~ 0.123 (3.12) MAX. 0.047 (1.20) 0.047 (1.20) MIN. 0.217 (5.52) REF. MIN. 

Revision: 06-Jul-2021 

Document Number: 87207 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jan-2022 

Document Number: 91000 

**1**