S1MSWFQ-7

**Green S1MSWFQ** ~~@,~~ Co **1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER** 

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## **Product Summary** (@TA = +25°C) 

|**VRRM (V)**|**IO (A)**|**VF Max (V)**|**IR Max (µA)**|
|---|---|---|---|
|1,000|1|1.1|10|



## **Features and Benefits** 

- Glass Passivated Die Construction 

- Ideally Suited for Automated Assembly 

- Small Form Factor, Low Profile 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP capable (Note 4)** 

## **Description and Applications** 

The S1MSWFQ is a rectifier packaged in the SOD123F package. Providing high reverse breakdown voltage and high current capability for standard rectification, this device is ideal for use in applications such as: 

- Reverse Protection 

- Blocking 

## **Mechanical Data** 

- Case: SOD123F 

- Case Material:  Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Polarity: Cathode Band 

- Weight:  0.0016 grams (Approximate) 

## **SOD123F** 

Top View 

Bottom View 

Schematic View 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|(Note 5)|||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|S1MSWFQ-7|Automotive|SOD123F|3,000/Tape &Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and 1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

S1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex.: C = 2015) M = Month (ex: 9 = September) 

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 Date Code Key<br>Year  2015 2016 2017  2018 2019 2020 2021  2022<br>ee Code C D  E  F  G H  I  J<br>ee ee<br>Month  Jan  Feb  Mar  Apr  May Jun  Jul  Aug Sep Oct  Nov  Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>ee<br>**----- End of picture text -----**<br>


Date Code Key 

1 of 5 **www.diodes.com** 

S1MSWFQ Document number: DS38316 Rev. 2 - 2 

November 2015 © Diodes Incorporated 

**S1MSWFQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VRM|1,000|V|
|RMS Reverse Voltage|VR(RMS)|700|V|
|Average Rectified Output Current                                @ TA= +75°C|IO|1.0|A|
|Non-Repetitive Peak Forward Surge Current<br>8.3ms Single Half Sine-Wave Superimposed on Rated Load|IFSM|25|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Typical Thermal Resistance, Junction to Case (Note 6)|RθJC|13|°C/W|
|Thermal Resistance Junction to Ambient (Note 6)|RθJA|78|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Reverse Breakdown Voltage (Note 7)|V(BR)R|1,000|—|—|V|IR= 5µA|
|Forward Voltage Drop|VF|—|0.98<br>0.88|1.1<br>—|V|IF= 1A, TJ= +25°C<br>IF= 1A, TJ= +125°C|
|Leakage Current (Note 7)|IR|—|0.2<br>11|10<br>100|µA|VR= 1,000V, TJ= +25°C<br>VR= 1,000V, TJ= +125°C|
|Reverse Recovery Time|tRR|—|1.0|—|µs|IF= 0.5A, IR= 1.0A, IRR= 0.25A|
|Total Capacitance|CT|—|6|—|pF|VR= 4.0VDC, f = 1MHz|



Notes: 6. Device mounted on FR4 PC board, 1 inch x 1 inch, 2oz. copper traces with 1x recommended pad layout, please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

7. Short duration pulse test used to minimize self-heating effect. 

2 of 5 **www.diodes.com** 

S1MSWFQ Document number: DS38316 Rev. 2 - 2 

November 2015 © Diodes Incorporated 

**S1MSWFQ** 

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1.8 10<br>1.6<br>|] | ttt See eee enone<br>1<br>1.4<br>| | | | ft | SSSsssse ass<br>1.2 | ft | ft tt 0.1 SaReee0 T A = 150°C //7/2ceeen<br>SGQG6e" ///nnneen<br>1 Note 6<br>0.8 ene 0.01 BeNES TA  = 125°C TA = 85°C<br>0.6 | (2 2 enoeeeee<br>| PN | yt 0.001 WTR<br>TA  = 25°C<br>0.4 TINE ff]<br>: EF<br>0.0001<br>0.2 | | | | KT ==Gah TA  = - 1 55°C ES<br>L | Yee, ft fe Pt<br>0 0.00001 9) ieeee<br>0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1  DC Forward Current Derating Curve Figure 2 Typical Forward Characteristics<br>100 20<br>10 Sscnssccsssasaaasss=aPEa OO TA = 150 ° C eer 1816 tttt ty ft<br>OPC, Cee err Te ee<br>a TA = 125°C = eee 14<br>S=o>=-Seee=o=soosscs | |} | tt yy<br>1 Zoe Tee 12 |<br>Zaaaieeceaniinaneiia TA = 85°C | | ft | Pe<br>a a Be 10<br>Zaceaaaeeeeconsaaaaa A |] | tt yy<br>0.1 Sne>—eRRREEDD==>——er T A  = 25°C eer 8 ee<br>We e ess nese sSeeaaaaesee 6 NE}<br>| [a] | tt tt<br>0.01 eer TA = -55°C EEE 4 PRE<br>a ett TT<br>pogeeeeee y ee aaae eeeeae 2 f = 1MHz | | |Pr<br>0.001 0<br>0 PERCE 100 200 300 400 500 600 700 800 900 1000 0 5 10 | 15 tt 20 25 tt 30 35 40<br>VR, REVERSE VOLTAGE (V) V R, REVERSE VOLTAGE (V)<br>Figure 3 Typical Reverse Characteristics Figure 4 Typical Total Capacitance<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>F<br>I<br>A)<br>µ<br>, LEAKAGE CURRENT (<br>IR<br>F(AV)<br>, AVERAGE FORWARD CURRENT (A)<br>I<br>, TOTAL CAPACITANCE (pF)T<br>C<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

S1MSWFQ Document number: DS38316 Rev. 2 - 2 

November 2015 © Diodes Incorporated 

**S1MSWFQ** 

## ~~a~~ **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**SOD123F (Type B)** 

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|||||||
|---|---|---|---|---|---|
|L|
|SOD123F (Type B)|
|Dim|Min|Max|Typ|
|A|0.81|1.15|—|
|D|b|0.80|1.35|—|
|b|
|c|0.05|0.30|—|
|D|1.70 1.90|1.80|
|E|2.60|2.80|2.70|
|E|He|He|3.30|3.70|3.50|
|L|0.35|0.85|—|
|All Dimensions in mm|
|c|
|A|
|joa|Co|

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## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SOD123F (Type B)** 

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|||
|---|---|
|Value|
|Dimensions|
|(in mm)|
|G|1.90|
|X|1.00|
|X1|3.90|
|Y|1.50|

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4 of 5 **www.diodes.com** 

S1MSWFQ Document number: DS38316 Rev. 2 - 2 

November 2015 © Diodes Incorporated 

**S1MSWFQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of tis document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1.  are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

5 of 5 **www.diodes.com** 

S1MSWFQ Document number: DS38316 Rev. 2 - 2 

November 2015 © Diodes Incorporated