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S1ML
Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 1.8 µs, 30 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 2Pins
- Product Range: S1xL Series
- Qualification: -
- Diode Case Style: Sub SMA
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 30A
- Reverse Recovery Time: 1.8µs
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.08 € |
| Current stock | 10+ |
| Lead time | 30 days |
**S1AL - S1ML** Taiwan Semiconductor ## **1A, 50V - 1000V Surface Mount Rectifier** ## FEATURES - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ## **Sub SMA** ## MECHANICAL DATA ## **Case:** Sub SMA Molding compound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) **Terminal:** Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test **Polarity:** Indicated by cathode band **Weight:** 0.019 g (approximately) ~~a~~ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S1AL S1BL S1DL S1GL S1JL S1KL S1ML UNIT ~~SFrrr—i—s GG~~ Marking code 1AL 1BL 1DL 1GL 1JL 1KL 1ML ~~GE OO GG~~ Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V ~~GE OO GG~~ Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V ~~GE OO GG~~ Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) ~~Io~~ 1 A ~~Pn GT OO~~ Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A ~~eeee ee~~ Maximum instantaneous forward voltage (Note 1) @ 1 A VF 1.1 V ~~eeee ee~~ TJ=25°C 5 Maximum reverse current @ rated VR IR μA TJ=125°C 50 ~~eeee ee GG~~ Typical junction capacitance (Note 2) CJ 9 pF ~~GO~~ Typical reverse recovery time (Note 3) trr 1.8 μs Typical thermal resistance RθJL 25 30 °C/W RθJA 85 85 ~~eees ee GG~~ Operating junction temperature range TJ - 55 to +175 °C ~~Pe~~ Storage temperature range TSTG - 55 to +175 °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Measured at 1 MHz and Applied VR=4.0 Volts. Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Version: O15 Document Number: DS_D1410010 **S1AL - S1ML** ~~om~~ Taiwan Semiconductor **==> picture [630 x 812] intentionally omitted <==** **----- Start of picture text -----**<br> ORDERING INFORMATION<br>Ce<br>PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING<br>SUFFIX SUFFIX<br>po RU Sub SMA 1,800 / 7" Plastic reel (8mm tape)<br>RV Sub SMA 3,000 / 7" Plastic reel (8mm tape)<br>— RT a Sub SMA 7,500 / 13" Paper reel (8mm tape)<br>Sr MT a Sub SMA 7,500 / 13" Plastic reel (8mm tape)<br>Sr RQ a Sub SMA 10,000 / 13" Paper reel (8mm tape)<br>S1xL Sr MQ a Sub SMA 10,000 / 13" Plastic reel (8mm tape)<br>H G<br>(Note 1) Sr R3 a Sub SMA 1,800 / 7" Plastic reel (12mm tape)<br>Sr RF a Sub SMA 3,000 / 7" Plastic reel (12mm tape)<br>Sr R2 a Sub SMA 7,500 / 13" Paper reel (12mm tape)<br>Sr M2 a Sub SMA 7,500 / 13" Plastic reel (12mm tape)<br>RH Sub SMA 10,000 / 13" Paper reel (12mm tape)<br>MH Sub SMA 10,000 / 13" Plastic reel (12mm tape)<br>Note 1: "x" defines voltage from 50V (S1AL) to 1000V (S1ML) —__ ee ee<br>EXAMPLE<br>PREFERRED PART NO. PACKING CODE<br>PART NO. PACKING CODE DESCRIPTION<br>PART NO. SUFFIX SUFFIX<br>AEC-Q101 qualified<br>S1MLHRUG S1ML H RU G<br>Green compound<br>RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted)<br>FIG. 2- TYPICAL REVERSE CHARACTERISTICS<br>FIG.1- MAXIMUM FORWARD CURRENT DERATING<br>100<br>CURVE<br>1.2<br>1 10 TJ=125 ° C<br>0.8 ee<br>1<br>TJ=75 ° C<br>0.6 e e<br>0.1<br>0.4 TSN ESSERE<br>0.2 0.01 TJ=25 ° C<br>0 eeNE E —<br>0.001 SSS =<br>0 25 50 75 100 125 150 175<br>0 20 40 60 80 100 120 140<br>LEAD TEMPERATURE (°C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>FIG. 3- MAXIMUM NON-REPETITIVE FORWARD FIG. 4- TYPICAL INSTANTANEOUS FORWARD<br>SURGE CURRENT CHARACTERISTICS<br>100 100<br>10<br>So ee<br>1<br>10<br>Se<br>0.1<br>8.3ms Single<br>Half Sine Wave<br>0.01<br>1 <a<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>1 10 100<br>FORWARD VOLTAGE (V)<br>NUMBER OF CYCLES AT 60 Hz<br>(μA)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT<br>(A) (A)<br>PEAK FORWARD SURGE CURRENT<br>INSTANTANEOUS FORWARD CURRENT<br>**----- End of picture text -----**<br> Version: O15 Document Number: DS_D1410010 **S1AL - S1ML** Taiwan Semiconductor FIG. 5- TYPICAL JUNCTION CAPACITANCE **==> picture [287 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>f=1.0MHz<br>Vsig=50mVp-p<br>SHH HIATT HTH<br>10<br>YT ELLIE EETTTT<br>ee ee lll<br>1 EET CET CETTE CTT<br>0.01 0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br> ## PACKAGE OUTLINE DIMENSIONS ## **Sub SMA** |**DIM.**|**Unit (mm)**<br>~~ee~~<br>~~ee~~|**Unit (mm)**<br>~~ee~~<br>~~ee~~|**Unit (inch)**<br>~~ee~~<br>~~ee~~|**Unit (inch)**<br>~~ee~~<br>~~ee~~| |---|---|---|---|---| ||**Min**<br>~~ee~~|**Max**<br>~~ee~~|**Min**<br>~~ee~~|**Max**<br>~~ee~~| |B<br>~~a~~<br>~~ee~~|1.70<br>~~ee~~<br>~~a~~<br>~~ee~~|1.90<br>~~ee ~~<br>~~ee~~|0.067<br> ~~ee~~<br>~~ee~~|0.075<br>~~ee~~<br>~~ee~~| |C<br>~~a~~<br>~~ee~~<br>~~ee~~|2.70<br>~~a~~<br>~~ee~~<br>~~ee~~|2.90<br>~~ee~~<br>~~ee~~|0.106<br>~~ee~~<br>~~ee~~|0.114<br>~~ee~~<br>~~ee~~| |D<br>~~a ~~<br>~~ee~~<br>~~ee~~<br>~~a~~|0.16<br> ~~a~~<br>~~ee~~<br>~~ee~~|0.30<br>~~ee~~<br>~~ee~~|0.006<br>~~ee~~<br>~~ee~~|0.012<br>~~ee~~<br>~~ee~~| |E<br>~~ee ~~<br>~~ee~~<br>~~a~~<br>~~**ee**~~|1.23<br> ~~ee ~~<br>~~ee~~<br>~~**ee**~~|1.43<br> ~~ee ~~<br>~~ee~~<br>~~**ee**~~|0.048<br> ~~ee ~~<br>~~ee~~<br>~~**ee**~~|0.056<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~| |F<br>~~ee ~~<br>~~a~~<br>~~**ee**~~|0.80<br> ~~ee ~~<br>~~**ee**~~|1.20<br> ~~ee ~~<br>~~**ee**~~|0.031<br> ~~ee ~~<br>~~**ee**~~|0.047<br> ~~ee~~<br>~~**ee**~~| |G<br>~~**ee**~~<br>~~ee~~|3.40<br>~~**ee**~~<br>~~ee~~|3.80<br>~~**ee**~~<br>~~ee~~|0.134<br>~~**ee**~~<br>~~ee~~|0.150<br>~~**ee**~~<br>~~ee~~| |H<br>~~**ee** ~~<br>~~ee~~|2.45<br> ~~**ee** ~~<br>~~ee~~|2.60<br> ~~**ee** ~~<br>~~ee~~|0.096<br> ~~**ee** ~~<br>~~ee~~|0.102<br> ~~**ee**~~<br>~~ee~~| |I<br>~~ee ~~|0.35<br> ~~ee ~~|0.85<br> ~~ee ~~|0.014<br> ~~ee ~~|0.033<br> ~~ee~~| |J|0.00|0.10|0.000|0.004| ## SUGGESTED PAD LAYOUT |**Symbol**|**Unit (mm)**|**Unit (inch)**| |---|---|---| |A|1.4|0.055| |B|1.2|0.047| |C|3.1|0.122| |D|1.9|0.075| |E|4.3|0.169| ## MARKING DIAGRAM P/N = Marking Code G = Green compound Code YW = Date Code F = Factory Code Version: O15 Document Number: DS_D1410010 **- S1AL S1ML** Taiwan Semiconductor ## Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: O15 Document Number: DS_D1410010
Updated at April 27, 2026
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