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S1D
Standard Recovery Diode, 200 V, 1 A, Single, 1.1 V, 30 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 30A
- Reverse Recovery Time: -
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.042 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Ss SEMICONDUCTORSe **S1A – S1M** ## Taiwan Semiconductor ## **1A, 50V - 1000V Surface Mount Rectifier** ## FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Moisture sensitivity level: level 1, per J-STD-020 - RoHS Compliant - Halogen-free according to IEC 61249-2-21 ## APPLICATIONS - DC to DC converter **==> picture [171 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |KEY PARAMETERS| |PARAMETER|VALUE|UNIT| |IF|1|A| |VRRM|50 - 1000|V| |IFSM|30, 40|A| |TJ MAX|175|°C| |Package|DO-214AC (SMA)| |Configuration|Single die| **----- End of picture text -----**<br> - Switching mode converters and inverters - Lighting application - Snubber - General purpose ## MECHANICAL DATA - Case: DO-214AC (SMA) - Molding compound meets UL 94V-0 flammability rating - Terminal: Matte tin plated leads, solderable per J-STD-002 - Meet JESD 201 class 2 whisker test - Polarity: Indicated by cathode band - Weight: 0.060g (approximately) ## **DO-214AC (SMA)** ## Cathode —_\q— Anode ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) **==> picture [512 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |PARAMETER|SYMBOL|S1A S1B S1D S1G|S1J|S1K S1M UNIT| |es| |es|Marking code on the device|S1A|S1B|S1D|S1G|S1J|S1K|S1M| |Repetitive peak reverse voltage|VRRM|50|100|200|400|600|800|1000|V| |es| |es|Reverse voltage, total rms value|VR(RMS)|35|70|140|280|420|560|700|V| |Forward current|IF|1|A| |Peak forward surge current, 8.3ms| |single half sine wave superimposed|IFSM|40|30|A| |es|on rated load| |Non-repetitive peak reverse avalanche|ee|ERSM|5|mJ| |energy, IAS = 1A, L = 10mH| |Junction temperature|TJ|- 55 to +175|°C| |es ee| |Storage temperature|TSTG|- 55 to +175|°C| |es|ee| **----- End of picture text -----**<br> 1 Version: S2102 Ee $$ **S1A – S1M** Taiwan Semiconductor ## THERMAL PERFORMANCE |THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE| |---|---|---|---|---| |PARAMETER||SYMBOL|TYP|UNIT| |Junction-to-lead thermal resistance|S1A<br>S1B<br>S1D<br>S1G<br>S1J|RӨJL|27|°C/W| ||S1K<br>S1M||30|°C/W| |Junction-to-ambient thermal resistance|S1A<br>S1B<br>S1D<br>S1G<br>S1J|RӨJA|75|°C/W| ||S1K<br>S1M||85|°C/W| ## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) |ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)| |---|---|---|---|---|---| |PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT| |Forward voltage(1)|IF= 1A, TJ= 25°C|VF|-|1.1|V| |Reverse current @ rated VR<br>(2)|TJ= 25°C|IR|-|1|µA| ||TJ= 125°C||-|50|µA| |Junction capacitance|1MHz, VR= 4.0V|CJ|12|-|pF| |Reverse recovery time|IF= 0.5A, IR= 1.0A,<br>Irr=0.25A|trr|1500|-|ns| ## **Notes:** 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ## ORDERING INFORMATION |ORDERING CODE(1)|PACKAGE|PACKING| |---|---|---| |S1x|DO-214AC (SMA)|7,500 / Tape & Reel| ## **Notes:** 1. “x” defines voltage from 50V(S1A) to 1000V(S1M) 2 Version: S2102 5 ——__$_$___________ **S1A – S1M** Taiwan Semiconductor ## CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ## **Fig.1 Forward Current Derating Curve** ## **Fig.2 Typical Junction Capacitance** **==> picture [224 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ee<br>Od<br>10<br>f=1.0MHz<br>Vsig=50mVp-p<br>1 eranLTElemmeELILTElemmeELIlemmeELIELI<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **==> picture [477 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 2 100<br>ee<br>Od<br>1 10<br>f=1.0MHz<br>Vsig=50mVp-p<br>0 1 eranLTElemmeELILTElemmeELIlemmeELIELI<br>25 50 75 100 125 150 175 0.1 1 10<br>LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V)<br> Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics<br>10 10<br>TJ=125 ° C<br>1 == — SSS == ——en Aa<br>0.1 ° 1<br>TJ=75 C<br>ae SL<br>0.01 =a eee Of<br>TJ=25 ° C Pulse width 300μs<br>1% duty cycle<br>0.001 S S SS 0.1 ff<br>10 20 30 40 50 60 70 80 90 100 0.6 0.8 1.0 1.2 1.4 1.6<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> ## **Fig.5 Maximum Non-Repetitive Forward Surge Current** **==> picture [349 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>8.3ms single half sine wave<br>40<br>30 ee eeel<br>eel S1A - S1K<br>20<br>a eas |<br>S1M<br>10<br>ie lll<br>0 e iin<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br> 3 Version: S2102 **S1A – S1M** [pg Taiwan Semiconductor SEMICONDUCTOR[pg ## CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) **Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram** 4 Version: S2102 % SEMICONDUCTOR[gee **S1A – S1M** Taiwan Semiconductor ## PACKAGE OUTLINE DIMENSIONS **DO-214AC (SMA)** ## SUGGESTED PAD LAYOUT **==> picture [59 x 61] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |A| |i|||| |L|[L]| **----- End of picture text -----**<br> ## MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 5 Version: S2102 **S1A – S1M** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor ## Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: S2102
Updated at April 27, 2026
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