RZR025P01TL
Power MOSFET, P Channel, 12 V, 2.5 A, 0.044 ohm, TSMT, Surface Mount
- Manufacturer: ROHM
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-300m
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TSMT
- Drain Source Voltage Vds: 12V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.5A
- Drain Source On State Resistance: 0.044ohm
- Gate Source Threshold Voltage Max: 300mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.119 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Pch -12V -2.5A Small Signal MOSFET
## RZR025P01
## **l Outline**
|VDSS<br>-12V<br>SOT-346T<br>RDS(on)(Max.)<br>61mΩ<br>SC-96<br>ID<br>±2.5A<br>TSMT3<br>PD<br>1.0W<br>**lInner circuit**<br>**lFeatures**<br>1) Low on-resistance<br>2) Built-in G-S Protection Diode<br>3) Small and surface mount package(TSMT3)<br>4) Pb-free lead plating ; RoHS compliant<br>**lPackaging specifications**<br>Type<br>Packing<br>Embossed<br>Tape<br>Reel size(mm)<br>180<br>**lApplication**<br>Tape width(mm)<br>8<br>Switching<br>Basic orderingunit(pcs)<br>3000<br>Tapingcode<br>TL<br>Marking<br>YC<br>**lAbsolute maximum ratings **(Ta= 25°C ,unless otherwise specified)<br>Parameter<br>Symbol<br>Value<br>Unit<br>Drain - Source voltage<br>VDSS<br>-12<br>V<br>Continuous drain current<br>ID<br>±2.5<br>A<br>Pulsed drain current<br>IDP*1<br>±10<br>A<br>Gate - Source voltage<br>VGSS<br>±10<br>V<br>Power dissipation<br>PD*2<br>1.0<br>W<br>PD*3<br>0.76<br>W<br>Not Recommended for<br>New Designs<br>(3)<br>(1)<br>(2)<br>(3)<br>(1) Gate<br>.<br>(2) Source<br>(1)<br>,<br>(3) Drain<br>4<br>*1 ESD Protection<br>Diode<br>*2 Body Diode<br>(2)|
|---|
|Junction temperature<br>Tj<br>150<br>℃|
|Operating junction and storage temperature range<br>Tstg<br>-55 to +150<br>℃|
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**20170331 - Rev.002**
1/11
**RZR025P01**
Datasheet
**l Thermal resistance**
|Parameter<br>Not Recommended for|Symbol<br>Not Recommended for|Conditions<br>Not Recommended for|Values<br>Not Recommended for|Values<br>Not Recommended for|Values<br>Not Recommended for|Unit<br>Not Recommended for|
|---|---|---|---|---|---|---|
||||Min.<br>Not Recommended for|Typ.<br>Not Recommended for|Max.<br>Not Recommended for||
|Drain - Source breakdown<br>voltage<br>Not Recommended for|V(BR)DSS <br>Not Recommended for|VGS= 0V, ID= -1mA<br>Not Recommended for|-12<br>Not Recommended for|-<br>Not Recommended for|-<br>Not Recommended for|V<br>Not Recommended for|
|Breakdown voltage<br>temperature coefficient<br>Not Recommended for<br>New Designs|ΔV(BR)DSS <br> ΔTj <br>Not Recommended for<br>New Designs|ID= -1mA<br> referenced to 25℃<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-21.9<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|mV/℃<br>Not Recommended for|
|Zero gate voltage<br>drain current<br>Not Recommended for<br>New Designs|IDSS<br>Not Recommended for<br>New Designs|VDS= -12V, VGS= 0V<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-1<br>Not Recommended for<br>New Designs|μA<br>Not Recommended for|
|Gate - Source leakage current<br>Not Recommended for<br>New Designs|IGSS<br>Not Recommended for<br>New Designs|VGS= ±10V, VDS= 0V<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|±10<br>Not Recommended for<br>New Designs|μA<br>Not Recommended for|
|Gate threshold voltage<br>Not Recommended for<br>New Designs|VGS(th)<br>Not Recommended for<br>New Designs|VDS= -6V, ID= -1mA<br>Not Recommended for<br>New Designs|-0.3<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-1.0<br>Not Recommended for<br>New Designs|V<br>Not Recommended for|
|Gate threshold voltage<br>temperature coefficient<br>Not Recommended for<br>New Designs|ΔVGS(th) <br> ΔTj <br>Not Recommended for<br>New Designs|ID= -1mA<br> referenced to 25℃<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|2.4<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|mV/℃<br>Not Recommended for|
|Static drain - source<br>on - state resistance<br>Not Recommended for<br>New Designs|RDS(on)*4<br>Not Recommended for<br>New Designs|VGS= -4.5V, ID= -2.5A<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|44<br>Not Recommended for<br>New Designs|61<br>Not Recommended for<br>New Designs|mΩ<br>Not Recommended for|
|||VGS= -2.5V, ID= -1.2A<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|60<br>Not Recommended for<br>New Designs|84<br>Not Recommended for<br>New Designs||
|||VGS= -1.8V, ID= -1.2A<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|81<br>Not Recommended for<br>New Designs|121<br>Not Recommended for<br>New Designs||
|||VGS= -1.5V, ID= -0.5A<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|110<br>Not Recommended for<br>New Designs|220<br>Not Recommended for<br>New Designs||
|Gate resistance<br>Not Recommended for<br>New Designs|RG<br>Not Recommended for<br>New Designs|f = 1MHz, open drain<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|13.5<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|Ω<br>Not Recommended for|
|Forward Transfer<br>Admittance<br>Not Recommended for<br>New Designs||Yfs|*4<br>Not Recommended for<br>New Designs|VDS= -6V, ID= -2.5A<br>Not Recommended for<br>New Designs|3.5<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|-<br>Not Recommended for<br>New Designs|S<br>Not Recommended for|
- *2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**20170331 - Rev.002**
2/11
**RZR025P01**
Datasheet
## **l Electrical characteristics** (Ta = 25°C)
|Values|||
|---|---|---|
|Parameter<br>Symbol<br>Conditions||Unit|
|Min.<br>Typ.|Max.||
|Input capacitance<br>Ciss<br>VGS= 0V<br>-<br>1350<br>-<br>pF<br>Output capacitance<br>Coss<br>VDS= -6V<br>-<br>130<br>-<br>Reverse transfer capacitance<br>Crss<br>f = 1MHz<br>-<br>125<br>-<br>Turn - on delay time<br>td(on)*4<br>VDD ⋍-6V,VGS= -4.5V<br>-<br>9<br>-<br>ns<br>Rise time<br>tr*4<br>ID= -1.2A<br>-<br>35<br>-<br>Turn - off delay time<br>td(off)*4<br>RL ⋍5Ω<br>-<br>130<br>-<br>Fall time<br>tf*4<br>RG= 10Ω<br>-<br>85<br>-<br>**lGate charge characteristics**(Ta= 25°C)<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Total gate charge<br>Qg*4<br>VDD ⋍-6V,<br>ID= -2.5A,<br>VGS= -4.5V<br>-<br>13<br>-<br>nC<br>Gate - Source charge<br>Qgs*4<br>-<br>2.5<br>-<br>Gate - Drain charge<br>Qgd*4<br>-<br>2.0<br>-<br>**lBody diode electrical characteristics** (Source-Drain) (Ta= 25°C)<br>Parameter<br>Symbol<br>Conditions<br>Values<br>Unit<br>Min.<br>Typ.<br>Max.<br>Continuous forward current<br>IS<br>Ta= 25℃<br>-<br>-<br>-0.8<br>A<br>Pulse forward current<br>ISP*1<br>-<br>-<br>-10<br>A<br>Not Recommended for<br>New Designs|||
|Forward voltage<br>VSD*4<br>VGS= 0V, IS= -2.5A<br>-<br>-|-1.2|V|
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**20170331 - Rev.002**
3/11
**RZR025P01**
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RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area<br>120 100 Ssssessnsssel SSNS SOs Sst So Ss it 6S SSSSSSSSSSSST [SSS (sss SSS ns St fs nSUSSSSSSSN GSSSSS Suse St Bo ot sO<br>e ENGR <x 10 P o> sete Sarit Pw<br>a = 100ps :<br>80 2 oe Sent fsb EEE<br>sg SaaNeee ° —— DC Operation “So [ews ms i<br>EEN<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>Junction Temperature : T; [°C] Drain - Source Voltage : -Vps [V]<br>Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power<br>Resistance vs. Pulse Width dissipation<br>a 10 rr —— a 1000 ————<br>= — Ae Fst Pe<br>— ,LU ope = KL<br>ra ——ee CU SSS<br>_— a Sl | a || || | ||<br>a- Pins enj= a .el<br>< Ft — p00 fH | a ee<br>@oO }Od Singl || a po ANNETTETT<br>Boo 7p 8° 5 a<br>FO CALM [emesytastem Po LU<br>GEE<br>4 ethg-ann=riyxRth-a) = = $<<br>= A a eee g— a<br>E ooo LLUINT of LC LUMM EE aTTT |<br>Zz 0.0001 0.01 1 100 0.0001 0.01 1 100<br>Pulse Width : Pw[s] Pulse Width : Pw [s]<br>www.rohm.com<br>4/11 20170331 - Rev.002<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**RZR025P01**
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RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)<br>2.5 2.5<br>| | ica O, | | = %<br>HT TJ Vos= -4.5V kr gy Voes= -4.5V —<br>2 HT —Ves= -2.5V ey Voeg= -2.5V<br>< [-F= Ves= -2.0V ——— 2 EL 1Ves= -2.0V<br>m ] Vast -1.8V x Po Vec=-1.8V<br>/ est -1. “oO Ves= -1.5V =<br>oy poe.<br>6 1 Neary 6 4 — r_ ag<br>£ | £<br>Oo | Oo<br>I<br>0.5 !/ 0.5<br>0 01 02 03 04 05 06 07 08 09 1 012 3 4 5 6 7 8 9 10<br>Drain - Source Voltage: -Vps [V] Drain - Source Voltage : -Vps [V]<br>Fig.7 Breakdown Voltage vs.<br>Junction Temperature<br>=<br>30 a<br>Q<br>>' 727 OePulsed<br>§ 8 eee<br># 25<br>Sa | | | | | {[ | | |<br>§ Beet eet<br>3 22 |<br>2 oa ne eee<br>B= ee<br>28 {|19i[ [ ]| || || [|[| |[| || |<br>& »H<br>ia -50 -25Lt]0 |25 50| |75 100I ft125 |150<br>Junction Temperature : T; [°C]<br>www.rohm.com<br>5/11 20170331 - Rev.002<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**RZR025P01**
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RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs.<br>Junction Temperature<br>° SSS LICL (ie<br>A Voge 6V ES l“=“' Vos<br>H = -6V<br>ppPueed poised =[ee =el Ct LC ottmae<br>Pe Ano .<br>2 = =<br>+ St8H<br>3 tn 41)<br>eo a<br>é A Pt tT tT | AL<br>§c es—a—AASes ee) yn) A A <Bee<br>Soon LtAp<br>es ee ey ee ey ee ee ee ee {40}<br>eyee<br>oor LP 0<br>00 02 04 06 08 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>Gate - Source Voltage: -Vgs [V] Junction Temperature : T; [°C]<br>Fig.10 Forward Transfer Admittance vs.<br>Drain Current<br>oO 100 F TTeumemnpeee| CToha | — cmeeatsee ae ae— eeerseee<br>no |_| V, = -6V ee er<br>f vera RE<br>ee<br>(3)<br>c8 1 0 eea aes |<br>£ Sasa<br>€ p—t ff eestieee amasstt<br>< pT TT eee TO<br>Co gin Co<br>= , IWAN Tl]<br>pon }-—_1 | ait AS 4p 275°C Sm eeeee<br>F ON eee ee<br>ne]oO P 4a a MBeal<br>: Ait mull<br>e 0 GETA<br>0.01 0.1 1 10<br>Drain Current : -Ip [A]<br>www.rohm.com<br>6/11 20170331 - Rev.002<br>© 2017 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
**RZR025P01**
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RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State<br>Resistance vs. Gate Source Voltage<br>120 ® 140 |<br>eg a ee<br>2 120 Pulsed<br>100 $ | itt | |__| es<br>= C00 LLY | | | |<br>= Sy 80 7 © ‘ot 90 PT [ [ [ht<br>HCCC] fee<br>= 2 6 \ eg<br>es \ 8g LAL1 1] tt<br><7 4 YB SSS<br>PCCCCOPN 3 ZEEERRERERS<br>20 POPPIN)6 oi [SRR] LILI| ii |<br>; £& ,LLIITITITT tt ft |<br>25 0 25 50 75 100 125 150 01 2 3 4 5 6 7 8 9 10<br>Junction Temperature : T; [°C] Gate - Source Voltage : -Ves [V]<br>Fig.13 Static Drain - Source On - State Fig.14 Static Drain - Source On - State<br>Resistance vs. Junction Temperature Resistance vs. Drain Current (I)<br>o 75 @ 10000 © eo<br>7)2 65 | PulsedcGs= ~4. tT of | | ft 7)2 |_|[| PulsedPu aa a<br>& fp ~——T | | [A | & [oT<br>£55 LZ & G00 SSS Se<br>op)SEspel 5 PF | | | |4ZY || op)28 PetEee [3] [Vg] Aetaay= -1.5V Sait Fn<br>Lee) gp FST<br>ee ee Td)<br>3 uy ae LL | il<br>£ Ff | | | ft ft fl ‘= a a emen<br>s 30 s |<br>o ot /| |i{i|]t{{i/ & Ce in<br>es ~_LLIITITITIT! = 4 tclLU |<br>-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10<br>Junction Temperature : T; [°C] Drain Current: -Ip [A]<br>www.rohm.com<br>7/11 20170331 - Rev.002<br>© 2017 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
**RZR025P01**
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RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State<br>Resistance vs. Drain Current (II) Resistance vs. Drain Current (IlI)<br>@ 10000. rr @ 10000 ey<br>5 A] Vose-45v FEE EHH & FY Veg -2.5V FEHR<br>a7 I Pulsed a ee el 7 [_] a<br>=7) |_| Pt Ty =o |_| Pulsed Ee ee<br>2 | [TTT] | TT Te all<br>2 TN<br>o [—][ 1][ 000] SS NS A A OS SS UIICS OS UI) owgn Le) SSELUENTSS A SSUTI A Oo |<br>6) SSS SSSSSeS gO SSae<br>ce ee manu ce re tt 7 = 428°C EE<br>= pt tT PTY Tp aqo5%o LU = rf. ttttt tLe a CC<br>Oe || Ty TTT7 T. 75 LU O = PPap T=75°e [TT<br>8 2 | ot TIT tee= Hill 68 2 ee4 all©,<br>BH igo LM| se III B= og LLL ll<br>' ee ee ee 1 $e<br><© OOne ae ae ooo < aereSYee<br>5 ee0 ee 5o Pta TT<br>° ee een ee|<br>5 PETTITTE TUN) LLL TPN<br>7p) 10 oO 10<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Drain Current : -lp [A] Drain Current : -Ip [A]<br>Fig.17 Static Drain - Source On - State Fig.18 Static Drain - Source On - State<br>Resistance vs. Drain Current (IV) Resistance vs. Drain Current (V)<br>oO8 10000 SSSSESS SS EE SSGSS SS OS (0) 10000 LSeS SS SS SE SSaaa Sh CS GS YS SSOS SS GSOS<br>nDo I] Veg=st -1.8V Eta © |_|| Ves=-1.5V= 0 aEeea ee ee<br>7) || _| PulPul s e:ed poPt T T yTT 7) |_| Pulsed pot} [tT] tT<br>2 oomTT Tg es|<br>° IN EIN ETN) eg a el<br>ce Fees: HH ¢f See.<br>> S a T,=25°C anil o & a A ee LT<br>85 2oF PTTTVPP ienee28 LI 68Seoa AALL |<br>BX soo echt AA IN Be ee TTI<br>£ a Et<br>o a o Pt<br>45 ee ee 5 a ee<br>°i | oT LTT TTTETT ||<br>dp) 10 PL TW CTI TU ip) 10 PETTITTTAIT TU<br>0.01 0.1 1 10 0.01 0.1 1 10<br>Drain Current : -Ip [A] Drain Current : -Ip [A]<br>www.rohm.com<br>8/11 20170331 - Rev.002<br>© 2017 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
**RZR025P01**
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**----- Start of picture text -----**<br>
RZR025P01 Datasheet<br>l Electrical characteristic curves<br>Fig.19 Typical Capacitance vs. Fig.20 Switching Characteristics<br>Drain - Source Voltage<br>10000 pSa a pyyse yp sys op ppp yp syria 1000 baHOT =<br>Ecc<br>co iti 1] Vee<br>- | oo oonEL _ HCHIT tere LETTE|} Re=100Vos=-4.5V<br>2 1000 SHEAN EnerTil] =2 100 O SSSU’RKCTT retees<br>® oo = Pe et Zo<br>8 TTS<br>S on one PE<br>8 mail niin, SU D ||<br>S ion HU LEM PAL LM = Lee TECAETT<br>oO PtSe et == —a a<br>oe ee ” eg<br>py ee2sre re Se aaa<br>i Veg=0V a | | LH ETT ET<br>jo Coo Lill | EA | LLUEE<br>0.01 0.1 1 10 100 0.01 0.1 1 10<br>Drain - Source Voltage : -Vps [V] Drain Current : -Ip [A]<br>Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs.<br>Source Drain Voltage<br>‘8 We 2 ——————<br>= * | Yoo -8v 7 a<br>S RE Mes<br>' 35 -|SITVA z~ py<br>8 2.5 / 5 —— T,=76C —<br>Ss® SEE AL g rae<br>2 L 6 T,=-25°C ~~ eee<br>3 5 — }—}<br>ST FA<br>a ” AY 2 SS<br>o 1 (| = =<br>§ YA ee eer<br>o 0.5 7 | | | | A APY | [ |<br>ALLLI TT I an LLL TAA ATI<br>012345 67 8 9 1011 1213 0 01 02 03 04 05 06 07 08 09 1<br>Total Gate Charge : Q, [nC] Source - Drain Voltage : -Vgp [V]<br>www.rohm.com<br>9/11 20170331 - Rev.002<br>© 2017 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
**RZR025P01**
Datasheet
## **l Measurement circuits**
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**----- Start of picture text -----**<br>
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms<br>Ves |p ——> Pulse width<br>Vos<br>R, Ves 50%1 10% 90% J °°%;<br>D.U.T.<br>RS Vop Vos /| 90% 90%<br>tavon rl] | t, tao t<br>Ll a<br>ton torr<br>Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform<br>Ves |p ——> Vo<br>Vos<br>Ri Qe<br>le(const) <— D.U.T. Ves [|<br>| Vop y,—_ Charge<br>l Notice<br>This product might cause chip aging and breakdown under the large electrified environment.<br>Please consider to design ESD protection circuit.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
**20170331 - Rev.002**
10/11
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RZR025P01 Datasheet<br>l Dimensions<br>D<br>SOT-346T -<br>SC-96<br>( TSMT3 ) Hi 3 coi<br>w) xo<br>an |<br>eT |.lUCWrR<br>ii Hi a S<br>mc .| | L. | x@) |S A<br>N i _<br>tt —_TH << i<br>1<br>z = |<br>'s| !<br>b2 |<br>Pattern of terminal position areas<br>[Not a pattern of soldering pads]<br>|| A || MIN,- SCOT| Sto S|MAX |0089MIN, | MAX<br>| Ai | =—000 =| ~— 00S || S000 =| 004<br>po| ASa2 ST | ) — o75 | So S| S030TT S| Ss?“$e<br>| ob 6] oss | Sco] 4 | 20<br>| ocbo | SCS280 | Se300 | o10oS || o18toi”|<br>Poe=eX):XY<br>| [| ST TZ<br>| He =| 260 | 3.00 S| toz S| tis<br>| ti | oso | oo | ora] 0024<br>| tp | o40 | o70 | oo | 0028 |<br>| oxa || CC005CCT=| 025|| 02 08| oto —sF<br>| om} —__MLIMGTERS __|___INGHES<br>| bez || CCTMIN, | MAX||KtMIN, | MAX<br>Poet [| tO Tt<br>a SX)<br>Dimension in mm/inches<br>www.rohm.com<br>11/11 20170331 - Rev.002<br>© 2017 ROHM Co., Ltd. All rights reserved.<br>New Designs<br>Not Recommended for<br>**----- End of picture text -----**<br>
## **Notice**
## **Precaution on using ROHM Products**
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment[(Note 1)] , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASS `Ⅲ` CLASS `Ⅱ` b CLASS `Ⅲ` CLASS `Ⅲ` CLASS `Ⅳ` CLASS `Ⅲ` 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document.
## **Precaution for Mounting / Circuit board design**
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.003**
## **Precautions Regarding Application Examples and External Circuits**
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.
- **Precaution for Electrostatic** This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
- **Precaution for Storage / Transportation** 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic
- 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
- 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton.
- 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period.
- **Precaution for Product Label** A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
- **Precaution for Disposition** When disposing Products please dispose them properly using an authorized industry waste company.
- **Precaution for Foreign Exchange and Foreign Trade act** Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export.
- **Precaution Regarding Intellectual Property Rights** 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data.
- 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software).
- 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein.
- **Other Precaution** 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.
> **[Notice-PGA-E ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.003**
Datasheet
## **General Precaution**
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
- information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information. **[Notice – WE ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.001**
Updated at June 5, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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