RW1E014SNT2R

## 4V Drive Nch MOSFET 

## **RW1E014SN** 

## **Structure** 

Silicon N-channel MOSFET 

## **Features** 

- 1) Low On-resistance, High speed switching. 

- 2) Built-in G-S Protection Diode. 

- 3) Space Saving, Small Surface Mount Package (WEMT6). 

## **Applications** 

## **Dimensions** (Unit : mm) 

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WEMT6 1.6<br>SOT-563T<br>(6) (5) (4)<br>(1) (2) (3)<br>fo)<br>Abbreviated symbol : PN<br>**----- End of picture text -----**<br>


Switching 

## **Packaging specifications** 

||Package|Taping|
|---|---|---|
|Type|Code|T2R|
||Basic ordering unit (pieces)|8000|
|RW1E014SN||||



## **Inner circuit** 

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(6) (5) (4)<br>∗ 2<br>∗ 1<br>(1) Drain<br>(2) Drain<br>(1) (2) (3) (3) Gate<br>(4) Source<br>∗ 1 ESD PROTECTION DIODE (5) Drain<br>∗ 2 BODY DIODE (6) Drain<br>**----- End of picture text -----**<br>


## **Absolute maximum ratings** (Ta=25°C) 

|**Absolute maximum ratings**(Ta=25°C)|**Absolute maximum ratings**(Ta=25°C)|(Ta=25°C)°C)C)|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~rs~~|Limits<br>~~rs~~|Unit|
|Drain-source voltage||VDSS<br>~~a~~|30<br>~~a~~|V|
|Gate-source voltage||VGSS<br>~~a~~<br>es|±20<br>~~a~~<br>es|V|
|Drain current|Continuous<br>ee<br>eeee|ID<br>ee<br>ee|±1.4<br>ee|A|
||Pulsed<br>eeee<br>ee|∗1<br>IDP<br>ee<br>ee|±2.8|A|
|Source current<br>(Body diode)|Continuous<br>eeee<br>ee|IS<br>ee<br>ee<br>es|0.5|A|
||Pulsed<br>ee <br>ee|∗1<br>ISP<br> ee<br>ee<br>es|2.8<br>ee|A|
|Total power dissipation||∗2<br>PD<br>es<br>es|0.7<br>es|W|
|Channel temperature||Tch<br>es|150<br>es|°C|
|||Tstg<br>es|−55 to+150<br>es||



- ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% 

∗ 2 When mounted on a ceramic board 

## **Thermal resistance** 

|Parameter|Symbol|Limits|Unit|
|---|---|---|---|
|Channel to ambient|Rth(ch-a)<br>∗|179|°C / W|



- ∗ When mounted on a ceramic board 

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**2009.06 - Rev.A** 

1/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RW1E014SN** 

## � **Electrical characteristics** (Ta=25°C) 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±20V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||30|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS= 30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||1.0|−|2.5|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|170|240|mΩ|ID= 1.4A, VGS= 10V|
|||||−|250|350|mΩ|ID= 1.4A, VGS= 4.5V|
|||||−|270|380|mΩ|ID= 1.4A, VGS= 4V|
|Forward transfer admittance||Yfs|∗|1|−|−|S|VDS= 10V, ID= 1.4A|
|Input capacitance|Ciss|||−|70|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|15|−|pF||
|Reverse transfer capacitance|Crss|||−|12|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|6|−|ns|VDD 15V<br>ID= 0.7A<br>VGS= 10V<br>RL21Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|6|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|13|−|ns||
|Fall time|tf<br>∗|||−|8|−|ns||
|Total gate charge|Qg<br>∗|||−|1.4|−|nC|VDD  15V<br>VGS= 5V<br>ID= 1.4A<br>RL11Ω<br>RG=10Ω|
|Gate-source charge|Qgs<br>∗|||−|0.6|−|nC||
|Gate-drain charge|Qgd<br>∗|||−|0.3|−|nC||



∗ Pulsed 

## � **Body diode characteristics** (Source-drain) (Ta=25°C) 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD<br>∗|−|−|1.2|V|IS= 1.4A, VGS=0V|



- ∗ Pulsed 

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**2009.06 - Rev.A** 

2/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RW1E014SN** 

## � **Electrical characteristics curves** 

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**----- Start of picture text -----**<br>
1000 Ta = 25 ° C 1000 Ta = 25 ° C 10 Ta = 25 ° C<br>f = 1MHz VDD = 15V 9 VDD = 15V<br>VGS = 0V tf RVGSG == 1010V Ω 8 IRDG == 1.4A 10 Ω<br>100 100 Pulsed 7 Pulsed<br>6<br>Ciss td (off)<br>5<br>4<br>10 Coss 10<br>Crss td (on) 3<br>2<br>tr<br>1<br>1 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0 1 2 3<br>DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN  CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics<br>vs. Drain-Source Voltage<br>10 VDS = 10V 1000 Ta = 25 ° C 10 VGS = 0V<br>Pulsed 900 Pulsed Pulsed<br>800<br>1 Ta = 125 ° C<br>TaTaTa = −== 752525 °°° CCC 700600 ID=1.4A 1 TaTaTa === 1257525 °° CC ° C<br>0.1 500 Ta = − 25 ° C<br>ID=0.7A<br>400<br>0.1<br>300<br>0.01<br>200<br>100<br>0.001 0 0.01<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 0.0 0.5 1.0 1.5<br>GATE-SOURCE VOLTAGE : VGS (V) GATE SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)<br>Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.<br>         On-State Resistance Source-Drain Voltage<br>         vs. Gate-Source Voltage<br>10000 10000 10000<br>VGS = 10V VGS = 4.5V VGS = 4V<br>Pulsed Pulsed Pulsed<br>Ta = 125 ° C Ta = 125 ° C<br>Ta = 125 ° C Ta = 75 ° C Ta = 75 ° C<br>Ta = 75 ° C Ta = 25 ° C Ta = 25 ° C<br>1000 Ta = 25 ° C 1000 Ta = − 25 ° C 1000 Ta = − 25 ° C<br>Ta = − 25 ° C<br>100 100 100<br>10 10 10<br>0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)<br>Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source<br>         On-State Resistance vs.          On-State Resistance vs.          On-State Resistance vs.<br>Drain Current ( Ι ) Drain Current ( ΙΙ ) Drain Current ( ΙΙΙ )<br>1000 Ta = 25 ° C<br>Pulsed<br>VGS=4V<br>VGS=4.5V<br>VGS=10V<br>100<br>0.1 1 10<br>DRAIN CURRENT : ID (A)<br>Fig.10 Static Drain-Source<br>           On-State Resistance vs.<br>  Drain Current ( Ι   )<br> (V)<br>GS<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) GATE SOURCE VOLTAGE : V<br>)Ω<br> (m<br> (A) DS(on)  (A)S<br>D<br>DRAIN CURRENT : I<br>SOURCE CURRENT : I<br>STATIC DRAIN-SOURCE                        ON-STATE RESISTANCE : R<br>)Ω )Ω )Ω<br> (m  (m  (m<br>DS(on) DS(on) DS (on)<br>STATIC DRAIN- SOURCE                        ON-STATE  RESISTANCE : R STATIC DRAIN- SOURCE                        ON-STATE  RESISTANCE : R STATIC DRAIN- SOURCE                        ON-STATE  RESISTANCE : R<br>)Ω<br> (m<br>DS (on)<br>STATIC DRAIN- SOURCE                        ON-STATE  RESISTANCE : R<br>**----- End of picture text -----**<br>


www.rohm.com 

**2009.06 - Rev.A** 

3/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**RW1E014SN** 

## � **Measurement circuit** 

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**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br>


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Pulse Width<br>90%<br>50% 50%<br>VGS 10%<br>VDS 10% 10%<br>90% 90%<br>td(on) tr td(off) tr<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-1  Switching Time Measurement Circuit 

Fig.1-2  Switching Waveforms 

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VGS ID<br>VDS<br>RL<br>IG (Const.) D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br>


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VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br>


Fig.2-1  Gate Charge Measurement Circuit 

Fig.2-2  Gate Charge Waveform 

## � **Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com 

**2009.06 - Rev.A** 

4/4 

○c 2009 ROHM Co., Ltd. All rights reserved. 

Notice 

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