RURG8060
Standard Recovery Diode, 600 V, 80 A, Single, 1.6 V, 85 ns, 800 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):80A; Diode Configuration:Single; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:85ns; Forward Surge Current Ifsm Max
- SVHC: Lead (10-Jun-2022)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.6V
- Forward Surge Current: 800A
- Reverse Recovery Time: 85ns
- Average Forward Current: 80A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 120 |
| Price | 2.95 € |
| Current stock | 10+ |
| Lead time | 30 days |
## Ultrafast Diode ## 80 A, 600 V ## RURG8060 ## **Description** The RURG8060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. ## **Features** - Ultrafast Recovery, trr = 85 ns (@ IF = 80 A ) - Max Forward Voltage, VF = 1.6 V (@ TC = 25 °C ) **www.onsemi.com** ~~=~~ • 600 V Reverse Voltage and High Reliability CATHODE CATHODE ANODE (BOTTOM • Avalanche Energy Rated SIDE METAL) • This Device is Pb−Free and is RoHS Compliant **JEDEC STYLE 2 LEAD TO−247 340CL Applications** • Switching Power Supplies • Power Switching Circuits **MARKING DIAGRAM** • General Purpose **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) $Y&Z&3&K **Rating Symbol Value Unit** RURG8060 Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward Current (TC = 72 ° C) IF(AV) 80 A Repetitive Peak Surge Current IFRM 160 A (Square Wave, 20 kHz) $Y = ON Semiconductor Logo Nonrepetitive Peak Surge Current IFSM 800 A &Z&3 = Numeric Date Code= Assembly Plant Code (Halfwave 1 Phase, 60 Hz) &K = Lot Code Maximum Power Dissipation PD 180 W RURG80100 = Specific Device Code Avalanche Energy EAVL 50 mJ (See Figure 7 and Figure 8) Operating and Storage Temperature TSTG, TJ −65 to ° C +175 ~~= ]~~ Stresses exceeding those listed in the Maximum Ratings table may damage the 1. Cathode 2. Anode device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2001 **October, 2020 − Rev. 4** **RURG8060/D** **RURG8060** ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Part Number**|**Package**|**Brand**| |---|---|---| |RURG8060|TO−247−2L|RURG8060| **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |VF|Instantaneous Forward Voltage<br>(Pulse Width = 300�s, Duty Cycle = 2%)|IF= 80 A|||1.6|V| |||IF= 80 A,<br>TC= 150°C|||1.4|V| |IR|Instantaneous Reverse Current|VR= 600 V|||250|�A| |||VR= 600 V<br>TC= 150°C|||2.0|mA| |trr|Reverse Recovery Time (See Figure 6 )<br>Summation of ta+ tb|IF= 1 A,<br>dlF/dt = 100 A/�s|||75|ns| |||IF= 80 A,<br>dIF/dt = 100 A/�s|||85|ns| |ta|Time to Reach Peak Reverse Current (See Figure 6)|IF= 80 A,<br>dIF/dt = 100 A/�s||40||ns| |tb|Time from Peak IRMto Projected Zero Crossing of IRM<br>Based on a Straight Line from Peak IRMThrough 25%<br>of IRM(See Figure 6)|IF= 80 A,<br>dIF/dt = 100 A/�s||25||ns| |R�JC|Thermal Resistance Junction to Case||||0.83|°C/W| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **RURG8060** ## **TYPICAL PERFORMANCE CURVES** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>175 [o] C<br>100<br>100 [o] C<br>10<br>25 [o] C<br>1<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 1. Forward Current vs. Forward Voltage** **==> picture [242 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60<br>trr<br>40<br>ta<br>20<br>tb<br>0<br>1 10 80<br>IF, Forward Current (A)<br>t, Times (ns)<br>**----- End of picture text -----**<br> **==> picture [230 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>175 [o] C<br>100<br>10<br>100 [o] C<br>1<br>0.1<br>25 [o] C<br>0.01<br>0 100 200 300 400 500 600<br>VR, Reverse Voltage (V)<br>Figure 2. Reverse Current vs. Reverse Voltage<br>100<br>80<br>DC<br>60<br>SQ. WAVE<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>TC, Case Temperature ( � C)<br>A)<br>�<br>, Reverse Current (<br>IR<br>, Average Forward Current (A)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 3. trr, ta and tb Curves vs. Forward Current** **Figure 4. Current Derating Curve** **www.onsemi.com** **3** **RURG8060** ## **TEST CIRCUITS AND WAVEFORMS** **==> picture [223 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> VGE AMPLITUDE AND<br>RG CONTROL dlF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>VGE +<br>VDD<br>t1 IGBT −<br>t2<br>**----- End of picture text -----**<br> **==> picture [212 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> IF dIdtF ta Trr tb<br>0<br>0.25I RM<br>IRM<br>**----- End of picture text -----**<br> **Figure 5. Trr Test Circuit** **Figure 6. Trr Waveforms and Definitions** **==> picture [172 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> I = 1.6 A<br>L = 40 mH<br>R < 0.1 �<br>EAVL = 1/2LI [2] [VR(AVL)/(VR(AVL)−VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL))<br>L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br> **Figure 7. Avalanche Energy Test Circuit** **==> picture [221 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br> **Figure 8. Avalanche Current and Voltage Waveforms** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [56 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> TO−247−2LD<br>CASE 340CL<br>ISSUE A<br>**----- End of picture text -----**<br> DATE 03 DEC 2019 ## **GENERIC** **MARKING DIAGRAM*** ~~|~~ ) ( AYWWZZ XXXX = Specific Device Code XXXXXXX A = Assembly Location XXXXXXX Y = Year WW = Work Week ZZ = Assembly Lot Code ~~|~~ *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER:** ## **98AON13850G** **DESCRIPTION: TO−247−2LD** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at April 14, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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