RURG8060-F085

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## Ultrafast Rectifier 80 A, 600 V 

## RURG8060-F085 

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CATHODE<br>ANODE<br>**----- End of picture text -----**<br>


## **Description** 

The RURG8060−F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. 

This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. 

## **Features** 

- High Speed Switching ( trr = 74 ns (Typ.) @ IF = 80 A ) 

- Low Forward Voltage( VF = 1.34 V (Typ.) @ IF = 80 A ) 

- Avalanche Energy Rated 

- AEC−Q101 Qualified 

- This Device is Pb−Free 

## **Applications** 

- Automotive DCDC converter 

- Automotive On Board Charger 

- Switching Power Supply 

- Power Switching Circuits 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Peak Repetitive Reverse Voltage|VRRM|600|V|
|Working Peak Reverse Voltage|VRWM|600|V|
|DC Blocking Voltage|VR|600|V|
|Average Rectified Forward Current<br>(TC= 25°C)|IF(AV)|80|A|
|Non−repetitive Peak Surge Current<br>(Halfwave 1 Phase 50 Hz)|IFSM|240|A|
|Avalanche Energy<br>(1.6 A, 40 mH)|EAVL|50|mJ|
|Operating Junction and Storage<br>Temperature|TJ,TSTG|−55 to<br>+175|°C|



**TO−247−2L 340CL** 

## **MARKING DIAGRAM** 

$Y&Z&3&K RURG8060 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RURG8060 = Specific Device Code 1. Cathode 2. Anode 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **RURG8060−F085/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **March, 2022 − Rev. 6** 

**RURG8060−F085** 

**THERMAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**THERMAL CH**|**ARACTERISTICS**(TC= 25°C unless otherwise noted)|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max**|**Units**|
|R�JC|Maximum Thermal Resistance, Junction to Case|0.18|°C/W|
|R�JA|Maximum Thermal Resistance, Junction to Ambient|50|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Tube**|**Quantity**|
|---|---|---|---|---|
|RURG8060|RURG8060−F085|TO−247|−|30|



## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|ess otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|IR|Instantaneous Reverse Current|VR= 600 V|TC=  25°C|−|−|250|uA|
||||TC=  175°C|−|−|2|mA|
|VFM<br>(Note 1)|Instantaneous Forward Voltage|IF= 80 A|TC=  25°C|−|1.34|1.6|V|
||||TC=  175°C|−|1.17|1.4|V|
|trr<br>(Note 2)|Reverse Recovery Time|IF= 1 A,<br>di/dt = 100 A/�s,<br>VCC= 390 V|TC=  25°C|−|46|75|ns|
|||IF= 80 A,<br>di/dt = 100 A/�s,<br>VCC= 390 V|TC=  25°C|−|74|90|ns|
||||TC=  175°C|−|290|−|ns|
|ta<br>tb<br>Qrr|Reverse Recovery Time<br>Reverse Recovery Charge|IF= 80 A,<br>di/dt = 100 A/�s,<br>VCC= 390 V|TC=  25°C|−|38<br>36<br>130|−<br>−<br>−|ns<br>ns<br>nC|
|EAVL|Avalanche Energy|IAV= 1.6 A, L = 40 mH||50|−|−|mJ|



1. Pulse : Test Pulse width = 300 � s, Duty Cycle = 2% 

2. Guaranteed by design 

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**RURG8060−F085** 

## **TEST CIRCUITS AND WAVEFORMS** 

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VGE AMPLITUDE AND<br>RG CONTROL dlF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>VGE +<br>VDD<br>t1 IGBT −<br>t2<br>**----- End of picture text -----**<br>


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IF dIdtF ta Trr tb<br>0<br>0.25I RM<br>IRM<br>**----- End of picture text -----**<br>


**Figure 1. Trr Test Circuit** 

**Figure 2. Trr Waveforms and Definitions** 

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I = 1.6 A<br>L = 40 mH<br>R < 0.1  �<br>EAVL = 1/2LI [2] [VR(AVL)/(VR(AVL)−VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL))<br>L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT −<br>**----- End of picture text -----**<br>


**Figure 3. Avalanche Energy Test Circuit** 

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VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 4. Avalanche Current and Voltage Waveforms** 

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**3** 

**RURG8060−F085** 

## **TYPICAL PERFORMANCE CHARECTERISTICS** 

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— Te 2 175°¢ ~—<br>10 / Sea<br>=<br>c<br>an<br>- ° ll - -<br>0.1<br>0.1 05 1.0 1.5<br>VF, Forward Voltage (V)<br>Figure 5. Typical Forward Voltage Drop<br>vs. Forward Current<br>1000<br>[reef oe bettf ee eben - at10v=<br>- P Typical<br>, Ul , , al :<br>:<br>0.1 1 10<br>VR, Reverse Voltage (V)<br>, Forward Current (A)<br>IF<br>, Capacitances (pF)Cj<br>**----- End of picture text -----**<br>


**Figure 5. Typical Forward Voltage Drop vs. Forward Current** 

**Figure 7. Typical Junction Capacitance** 

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10 | —— ft<br>1 bese : Sioa Seen<br>t<br>ee ee i<br>Beoeeeeceeee<br>1E-3 = — | aif = = = Lk sais =<br>1E-4<br>0 100 200 300 400 500<br>VR, Reverse Voltage (V)<br>Figure 6. Typical Reverse<br>Current vs. Reverse Voltage<br>300<br>aan<br>oo |. p=<br>P= ail |<br>. a<br>.a ate<br>100 200 300 400<br>di/dt (A/ Uy s)<br>A)<br>, Reverse Current (<br>IR<br>Trr, Reverse Recovery Time (ns)<br>**----- End of picture text -----**<br>


**Figure 8. Typical Reverse Recovery Time vs. di/dt** 

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| Oe<br>10 Ca<br>0<br>100 200 300<br>di/dt (A/ wu s)<br>, Reverse Recovery Current (A)<br>Irr<br>**----- End of picture text -----**<br>


**Figure 9. Typical Reverse Recovery Current vs. di/dt** 

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"EE ENG<br>20<br>25 50 75 100 125<br>TC, Case Temperature ( ° C)<br>, Average Forward Current (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 10. Forward Current Derating Curve** 

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**4** 

**RURG8060−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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“et<br>a<br>an rd<br>ae<br>100 200 300 400<br>di/dt, (A/ uw s)<br>Figure 11. Reverse Recovery Charge<br>, Reverse Recovery Charge (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**Figure 12. Transient Thermal Response Curve** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−247−2LD<br>CASE 340CL<br>ISSUE A<br>**----- End of picture text -----**<br>


DATE 03 DEC 2019 

## **GENERIC** 

**MARKING DIAGRAM*** ~~|~~ ) ( AYWWZZ XXXX = Specific Device Code XXXXXXX A = Assembly Location XXXXXXX Y = Year WW = Work Week ZZ = Assembly Lot Code ~~|~~ *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

## **98AON13850G** 

**DESCRIPTION: TO−247−2LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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