RURG80100-F085

## **RURG80100-F085 80A, 1000V Ultrafast Rectifier** 

## **Features** 

- Ultrafast and soft recovery 

- Low Forward Voltage( VF=1.56V(Typ.) @ IF=80A ) 

- High Speed Switching ( trr=242ns(Typ.) @ IF=80A ) 

- Avalanche Energy Rated 

- AEC-Q101 Qualified 

## **Applications** 

- EV and HEV On-Board Charger 

- Stationary Charger 

## **Description** 

The RURG80100-F085 is an Ultrafast™ diode with low forward voltage drop and soft recovery characteristics. Its low voltage drop and ultrafast soft recovery minimize conduction loss and electrical noise in power switching circuit. Meanwhile, the robust design and high quality manufacture process make it a reliable device for heavy duty automotive applications. 

This device is intended to be used in a variety of automotive power-train applications for purposes like freewheeling, clamping, rectification, bootstrap and snubber, etc. It’s also an ideal device for non-automotive applications which requires a higher reliability performance. 

- Other Automotive Applications 

- General Power Supply Requiring Higher Reliability 

## **Pin Assignments** 

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oe 1 2<br>1. Cathode 2. Anode<br>TO-247-2L<br>1. Cathode 2. Anode<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** TC = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Ratings**|**Units**|
|---|---|---|---|
|VRRM|Peak Repetitive Reverse Voltage|1000|V|
|VRWM|Working Peak Reverse Voltage|1000|V|
|VR|DC Blocking Voltage|1000|V|
|IF(AV)|Average Rectified Forward Current                 @ TC= 25°C|80|A|
|IFSM|Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz)|240|A|
|EAVL|Avalanche Energy (1.6A, 40mH)|50|mJ|
|TJ,TSTG|Operating Junction and Storage Temperature|- 55 to +175|°C|
|**Thermal Characteristics** TC= 25°C unless otherwise noted||||
|**Symbol**<br>**Parameter**<br>**Max**<br>**Units**<br>RθJC<br>Maximum Thermal Resistance, Junction to Case<br>0.3<br>°C/W<br>RθJA<br>Maximum Thermal Resistance, Junction to Ambient<br>45<br>°C/W<br>~~————~~||||



## **Package Marking and Ordering Information** 

**Device Marking Device Package Tube Quantity** RURG80100 RURG80100-F085 TO-247 - 30 ~~——————————~~ 

**1** 

©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 

Publication Order Number: RURG80100-F085/D 

**Electrical Characteristics** TC = 25°C unless otherwise noted 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Conditions|Min.|Typ.|Max|Units|
|IR|Instantaneous Reverse Current|VR = 1000V|TC = 25 °C|-|-|250|uA|
|T|C|= 175 °C|-|-|1.5|mA|
|VFM1|Instantaneous Forward Voltage|IF = 80A|TC = 25 °C|-|1.56|2.0|V|
|TC = 175 °C|-|1.35|1.7|V|
|trr2|Reverse Recovery Time|IF =1A, di/dt = 100A/μs,|TC = 25 °C|-|122|158|ns|
|VCC= 650V|
|IF =80A, di/dt = 100A/μs,|TC = 25 °C|-|242|314|ns|
|VCC= 650V|TC = 175 °C|-|979|-|ns|
|ta|Reverse Recovery Time|IF =80A, di/dt = 100A/μs,|TC = 25 °C|-|74|-|ns|
|tb|VCC= 650V|-|168|-|ns|
|Qrr|Reverse Recovery Charge|-|751|-|nC|
|Notes:|
|1. Pulse : Test Pulse width = 300|μs, Duty Cycle = 2%s, Duty Cycle = 2%|
|2. Guaranteed by design|
|Test Circuit and Waveforms|
|VGE AMPLITUDE AND|
|RG CONTROL dIF/dt|L|
|t1 AND t2 CONTROL IF|DUT|CURRENT|IF|—r|dIdtF|al\|i|<|<|ta|><|t|;|rr|tb|~|
|RG|SENSE|0|
|+|
|VGE|=|t1|||I|IGBT|—|-|VDD|77|fa|TT|0.25 IIRM|RM|
|t2|

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## **Notes:** 

1. Pulse : Test Pulse width = 300 μs, Duty Cycle = 2%s, Duty Cycle = 2% 

2. Guaranteed by design 

## **Test Circuit and Waveforms** 

**trr Test Circuit** 

## **trr Waveforms and Definitions** 

**Avalanche Energy Test Circuit** 

**Avalanche Current and Voltage Waveforms** 

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**2** 

## **Typical Performance Characteristics** 

**Figure 1. Typical Forward Voltage Drop vs. Forward Current** 

**Figure 2. Typical Reverse Current  vs. Reverse Voltage** 

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300 1000<br>100 100 TC = 175 [o] C<br>TC = 175 [o] C 10 TC = 125 [o] C<br>10 1<br>T C  = 125 [o] C 0.1<br>TC = 25 [o] C<br>1 0.01<br>TC = 25 [o] C 1E-3<br>0.1 1E-4<br>0.1 0.5 1.0 1.5 2.0 2.5 200 400 600 800 1000<br> Forward Voltage, VF [V] Reverse Voltage, VR [V]<br>Figure 3.Typical Junction Capacitance      Figure 4. Typical Reverse Recovery Time<br> vs. di/dt<br>10000 1200<br>Typical Capacitance IF = 80A<br>at 10V =  239pF<br>1000<br>1000<br>800 TC = 175 [o] C<br>600<br>100 TC = 125 [o] C<br>400<br>T C = 25 [o] C<br>10 200<br>0.1 1 10 100 1000 100 200 300 400 500<br>Reverse Voltage, VR [V] di/dt [A/ μ s]<br>Figure 5. Typical Reverse Recovery    Figure 6. Forward Current Derating Curve<br> Current vs. di/dt<br>70 300<br>IF = 80A<br>60<br>250<br>T C  = 175 [o] C<br>50<br>200<br>40<br>150<br>30 TC = 125 [o] C<br>100<br>20<br>TC = 25 [o] C 50<br>10<br>0 0<br>100 200 300 400 500 25 50 75 100 125 150 175<br>di/dt [A/ μ s] Case temperature, TC [ [o] C]<br>A]<br>μ<br>Forward Current, I [A]F Reverse Current , I [R<br> [ns]<br>rr<br>Capacitances , Cj [pF]<br>Reverse Recovery Time, t<br> [A]<br> [A]<br>rr<br>F(AV)<br>Reverse Recovery Current, I Average Forward Current, I<br>**----- End of picture text -----**<br>


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**3** 

## **Typical Performance Characteristics** (Continued) 

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 Figure 7. Reverse Recovery Charge<br>15000<br>I F  = 80A<br>12000 T C = 175 [o] C<br>9000<br>TC = 125 [o] C<br>6000<br>3000<br>T C  = 25 [o] C<br>0<br>100 200 300 400 500<br>di/dt [A/ μ s]<br> [nC]<br>rr<br>Reverse Recovery Charge, Q<br>**----- End of picture text -----**<br>


**Figure 8. Transient Thermal Response Curve** 

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1<br>0.1 D=0.5<br>PDM<br>0.2<br>0.1 t 1 t 2<br>0.05<br>0.02 * Notes :<br>0.01<br>0.01 1. ZthJC(t) = 0.2  [o] C/W Typ.<br>single pulse 2. Duty Factor, D=t 1 /t 2<br>3. T JM  - T C  = P DM  * Z thJC (t)<br>0.0010.01<br>10-5 10-4 10-3 10-2 10-1 100 101 102<br>t1, Square Wave Pulse Duration [sec]<br>ZthJC(t), Thermal Response<br>**----- End of picture text -----**<br>


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**4** 

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