RT3215-32.768-6-TR

## **SURFACE MOUNT MICROPROCESSOR CRYSTAL** 

Page 1 of 5 

## **RT3215-32.768-6-TR** 

## • **SPECIFICATIONS** 

|**PARAMETER**|**VALUE**|
|---|---|
|NOMINAL FREQUENCY|32.768 kHz|
|MODE OF OSCILLATION|Fundamental|
|FREQUENCY TOLERANCE AT 25°C|±20ppm max|
|TURNOVER TEMPERATURE|+25 ± 5°C|
|TEMPERATURE COEFFICIENT|-0.04ppm / °C2max|
|OPERATING TEMPERATURE RANGE|-40°C to +85°C|
|STORAGE TEMPERATURE RANGE|-55°C to +125°C|
|AGING|±3ppm firstyear max|
|LOAD CAPACITANCE|6pF|
|EQUIVALENT SERIES RESISTANCE|70 kmax|
|SHUNT CAPACITANCE|1.1pF typ|
|DRIVE LEVEL|0.5µW max|
|INSULATION RESISTANCE|500 Mmin@DC 100V|



Photo not actual part 

## • **MECHANICAL SPECIFICATION** 

## • **CARRIER TAPE DIMENSIONS** 

**NOTE: REFER TO EIA-481 FOR DIMENSIONS** 

## • **PACKAGING** 

180 mm REEL DIAMETER 12 mm TAPE WIDTH, 4 mm PITCH QUANTITY: 3000 PIECES PER REEL 

IN ACCORDANCE WITH EIA-481 

RALTRON ELECTRONICS ▪ 10400 N.W. 33[r d  ] STREET ▪ Miami, Florida 33172 ▪ U.S.A. Telephone: +1-305-593-6033 ▪  Fax: +1-305-594-3973  ▪  e-mail: sales@raltron.com  ▪  web site: http://www.raltron.com 

Page 2 of 5 

## **SURFACE MOUNT MICROPROCESSOR CRYSTAL** 

**RT3215-32.768-6-TR** 

## • **REFLOW PROFILE** 

**==> picture [377 x 341] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|tP|
|TP|
|Critical Zone|
|Ramp-up|TL to TP|
|TL|
|tL|
|TSMAX|
|Temp.|
|[°C]|Ramp-down|
|TSMIN|
|tS Preheat|
|—a|*|
|Time [sec]|
|t[25°C] to Peak|
|Reflow profile|
|Temperature Min Preheat|TSMIN|150°C|
|Temperature Max Preheat|TSMAX|200°C|
|Time (TSMIN to TSMAX)|tS|60-180 sec.|
|Temperature|TL|217°C|
|Peak Temperature|TP|260°C|
|Ramp-up rate|RUP|3°C/sec max.|
|Ramp-down rate|RDOWN|6°C/sec max.|
|Time within 5°C of Peak Temperature|tP|10 sec.|
|Time t[25°C] to Peak Temperature|t[25°C] to Peak|480 sec.|
|Time|tL|60-150|sec.|

**----- End of picture text -----**<br>


## • **ENVIRONMENTAL** 

**==> picture [276 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||
|---|---|
|PARAMETER|VALUE|
|MOISTURE SENSITIVITY LEVEL|1|
|RoHS|Compliant|
|REACH SVHC|Compliant|
|HALOGEN-FREE|Compliant|
|ESD CLASSIFICATION LEVEL|N/A|
|TERMINATION FINISH|Au|

**----- End of picture text -----**<br>


RALTRON ELECTRONICS ▪ 10400 N.W. 33[r d  ] STREET ▪ Miami, Florida 33172 ▪ U.S.A. Telephone: +1-305-593-6033 ▪  Fax: +1-305-594-3973  ▪  e-mail: sales@raltron.com  ▪  web site: http://www.raltron.com 

Page 3 of 5 

## **SURFACE MOUNT MICROPROCESSOR CRYSTAL** 

**RT3215-32.768-6-TR** 

## • **MARKING** 

Xywwx X – Internal Production ID code (J, R, T, Y, M, R, N, AA) y – Year code ww – Week code x – 1 or 2 digits as Lot code ymxxx y – Year code m – Month code, Jan ~ Sep: 1 ~ 9, Oct: X  Nov: Y  Dec: Z xxx – Lot code XLzymd X – Internal Production ID code (J, R, T, Y, M, R, N, AA) L – Load capacitance code (A: 12.5pF  B: 9pF  C: 7pF  Z: others ) z – Lot code y – Year code m – Month code, Jan ~ Sep: 1 ~ 9, Oct: X  Nov: Y  Dec: Z d – Day code 

xx XzymFxx X – Internal Production ID code (J, R, T, Y, M, R, N, AA) z – Frequency code y – Year code m – Month code, Jan ~ Sep: 1 ~ 9, Oct: X  Nov: Y  Dec: Z xx xx[ – Lot code ] Xywwx 32.768 X – Internal Production ID code (J, R, T, Y, M, R, N, AA) y – Year code ww – Week code x – 1 or 2 digits as Lot code 32.768 3Xyx 3 – Item code X – Internal Production ID code (J, R, T, Y, M, R, N, AA) y – Year code x – 1 or 2 digits as Lot code 

RALTRON ELECTRONICS ▪ 10400 N.W. 33[r d  ] STREET ▪ Miami, Florida 33172 ▪ U.S.A. Telephone: +1-305-593-6033 ▪  Fax: +1-305-594-3973  ▪  e-mail: sales@raltron.com  ▪  web site: http://www.raltron.com 

## **SURFACE MOUNT MICROPROCESSOR CRYSTAL** 

Page 4 of 5 

## **RT3215-32.768-6-TR** 

## • **APPROVAL** 

|**APPROVAL**||
|---|---|
|Drawn By:|FP, 20 January 2014|
|Approved By:|FP, 20 January 2014|
|Revision:|A, Initial Release<br>B, KJ, 7/26/16 Corrected Tape Width to 12mm; Peak Temperature 260˚C<br>C, Updated to current spec levels KJ 5/15/17, Updated to current spec levels by XL 5/10/2019<br>D, Added markings by XLiu, December 10, 2020<br>E, AR January 07, 2021<br>Updated the Carrier Tape Dimensions<br>F,Addreliability conditions byXLiu,April 28,2022|



Raltron Electronics / RAMI Technology USA, LLC, including its affiliates, employees, agents and other persons acting on  its behalf (collectively Raltron/RAMI Tech), disclaim any and all liability for any errors or inaccuracies contained in this data sheet.  While Raltron/RAMI Tech has made every reasonable effort ensure the accuracy of all product information, specifications and data contained herein, Raltron/RAMI Tech does not guarantee that the information is accurate, reliable or current.   The product information is provided only for reference purposes only and is subject to change, correction or revision, at any time without notice.  Raltron/RAMI Tech does not assume any liability arising out of an application or use of any product described herein and disclaims any warranties expressed or implied.  The user of products in such applications shall assume all risks of such use and will agree to hold Raltron/RAMI Tech, harmless against all damages. Copyright © 2016, Raltron Electronics / RAMI Technology USA, LLC.  All rights reserved. No part of this document may be reproduced in any form without the prior written permission of Raltron Electronics / RAMI Technology USA, LLC. 

## • **RELIABILITY SPECIFICATIONS** 

|Test Item|Test Methods/Conditions|Test Criteria|
|---|---|---|
|High Temp Storage|Temperature: 125℃± 5℃for 1000±12 hours. (If Customer's<br>temperature request is higher than the standard, Temperature test<br>must be done for customer requirements.) Then 25 ±2℃over 2h<br>before testing|⊿Freq.≤±20ppm,<br>⊿RR ≤±5kΩ or 20%|
|Low Temp Storage|-40℃±2℃for500±12 hours.(If Customer's temperature request is<br>lower than the standard, Temperature test must be done for<br>customer requirements.)Then 25±2℃ over 2hbefore testing|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|
|High Temp. & Humidity|Temperature: 85℃±2℃Relative Humidity: 85%<br>Time: 500±12 hours. Then 25 ±2℃over 2hours before testing|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%<br>Insulation resistance 500MΩ<br>min, atDC100V|
|Thermal Shock|The crystal unit shall be subjected to 100 successive change of<br>Temperature cycles, then 25±2℃over 2hours before testing,<br>Each Cycle as bellow,<br>-40℃+0/-6℃for 30 ±3 minutes<br>25℃±2℃for 2~3 minutes<br>125℃+4/-0℃for 30 ±3 minutes<br>25℃±2℃for 2~3 minutes|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|
|Resistance to Soldering<br>Heat|Reflows two times, then 25 ±2℃over 2h before testing|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩor 20%|
|Drop Test|Free drop from 100cm for 3 times on hardWood.|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|



RALTRON ELECTRONICS ▪ 10400 N.W. 33[r d  ] STREET ▪ Miami, Florida 33172 ▪ U.S.A. Telephone: +1-305-593-6033 ▪  Fax: +1-305-594-3973  ▪  e-mail: sales@raltron.com  ▪  web site: http://www.raltron.com 

## **SURFACE MOUNT MICROPROCESSOR CRYSTAL** 

Page 5 of 5 

|||**RT3215-32.768-6**|
|---|---|---|
|Vibration|Frequency: 10 to 55Hz,<br>full wave Amplitude: 1.5±15% mm (Peak to Peak)<br>Sweep/Cycle: 2~3 minutes, 3 Directions: X,Y,Z<br>Duration:  2 hoursineachdirection|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|
|Solderability|The lead is immersed in a 260±5℃solder bath for 2±0.6 seconds.|0.6 seconds.The new uniform solder coating<br>coverage 95 % minimum.|
|Fine Leak|Helium bombing 5~5.5 kgf/cm2 for 2 hours, then tested with a helium<br>mass spectrometryleakdetector.|Helium bombing 5~5.5 kgf/cm2 for 2 hours, then tested with a helium<br>Air Leak rate<1 x 1E-9Pa.m3/s)|
|Mechanical Shock|100g, 6ms|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|
|Sticking Tendency|A R0.5 pressurized bar shall be used to apply a 10N load in the<br>center of element and retain it for 10seconds.<br>eer RO. SH AIA.|⊿Freq.≤±5ppm,<br>⊿RR ≤±5kΩ or 15%|
|Board Flex Test|Shall be pressurized at a speed of approx. 0.5mm/sec. in the<br>direction indicated by the arrow until bending width 3mm and held<br>for 5 seconds.<br>|<br>PRESSURE<br>¥<br>,<br>ROD R20<br>#8.aly|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|
|Element Assembly<br>Strength Test|A R0.5 pressurized bar shall be used to apply a 10N load in the<br>center of element and retain it for 10seconds.<br>RO. 5H)Faye<br>PRESSUER<br>\<br>ROD RO.5Nf sate FH)<br>1<br>mm<br>| Had<br>|<br>Kew<br>i<br>at|⊿Freq.≤±10ppm,<br>⊿RR ≤±5kΩ or 20%|



RALTRON ELECTRONICS ▪ 10400 N.W. 33[r d  ] STREET ▪ Miami, Florida 33172 ▪ U.S.A. Telephone: +1-305-593-6033 ▪  Fax: +1-305-594-3973  ▪  e-mail: sales@raltron.com  ▪  web site: http://www.raltron.com