RSX101M-30TR
Small Signal Schottky Diode, Single, 30 V, 1 A, 390 mV, 45 A, 150 °C
- Manufacturer: ROHM
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):1A; Forward Voltage VF Max:390mV; Forward Surge Cur; Available until stocks are exhausted Alternative available
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 2Pins
- Product Range: RSX10
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 390mV
- Forward Surge Current: 45A
- Reverse Recovery Time: -
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.351 € |
| Current stock | 200+ |
| Lead time | 30 days |
Data Sheet EE ## Schottky Barrier Diode ## **RSX101M-30** **Applications** General rectification ## **Features** 1)Small power mold type. (PMDU) 2)Low VF, Low IR 3)High reliability **Construction** Silicon epitaxial ## **Dimensions** (Unit : mm) **==> picture [278 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions (Unit : mm) Land size figure (Unit : mm)<br>0.1±0.1<br>1.6±0.1 0.05 1.2<br>= H<br>PMDU<br>| + im<br>0.9±0.1 Structure<br>ROHM : PMDU ~ | 0.8±0.1 |L 2<br>JEDEC :SOD-123<br>Manufacture Date<br>0.85<br>3.05<br>① 2.6±0.1 3.5±0.2<br>**----- End of picture text -----**<br> ## **Taping specifications** (Unit : mm) **==> picture [226 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> ee 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1<br>1.81±0.1 -f} 4.0±0.1 φ1.0±0.1 wh<br>1.5MAX<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>3.71±0.1<br>**----- End of picture text -----**<br> ## **Absolute maximum ratings** (Ta=25°C) |Parameter|Symbol|Limits|Unit| |---|---|---|---| |Reverse voltage(repetitive)|VRM|30|V| |Reverse voltage(DC)|VR|30|V| |Average rectified forward current|Io|1|A| |Forward current surgepeak (60Hz・1cyc)|IFSM|45|A| |Junction temperature|Tj|150|°C| |Storage temperature|Tstg|40 to150|°C| (*1)Mounting on epoxi board. 180°Half sine wave ## **Electrical characteristics** (Ta=25°C) |Parameter|Symbol<br>~~————~~|Min.<br>~~————~~|Typ.<br>~~————~~|Max.<br>~~————~~|Unit<br>~~————~~|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VF<br>~~——————EE~~|-<br>~~——————EE~~|0.35<br>~~——————EE~~|0.39<br>~~——————EE~~|V<br>~~——————EE~~|IF=1A| |Reverse current|IR<br>~~=====~~|-<br>~~=====~~|90<br>~~=====~~|200<br>~~=====~~|μA<br>~~=====~~|VR=30V| |Capacitance between terminals|Ct<br>~~=====~~|-<br>~~=====~~|60.0<br>~~=====~~|-<br>~~=====~~|pF<br>~~=====~~|VR=10V , f=1MHz| |ESD breakdown voltage|ESD<br>~~=====~~|-<br>~~=====~~|12.0<br>~~=====~~|-<br>~~=====~~|kV<br>~~=====~~|C=200pF,R=0Ω| www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.05 - Rev.C** 1/3 Data Sheet **RSX101M-30** **==> picture [471 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1000000 1000<br>Ta=125℃ Ta=150℃ f=1MHz<br>Ta=75℃ 100000 Ta=125℃<br>Ta=150℃<br>10000<br>0.1 Ta=25℃ Ta=75℃ 100<br>1000<br>Ta=-25℃ Ta=25℃<br>100<br>0.01 10<br>10 Ta=-25℃<br>1<br>0.001 0.1 1<br>0 100 200 300 400 500 0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>380 1000 350<br>Ta=25℃IF=1A 900 Ta=25℃VR=30V 340 Ta=25℃f=1MHz<br>370 n=30pcs 800 n=30pcs 330 VR=0V<br>700 320 n=10pcs<br>360 600 310<br>500 300<br>350 400 290<br>300 280<br>AVE:103.1uA<br>340 200 270<br>AVE:349.9mV 100 260 AVE:300.1pF<br>330 0 250<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>200 30 100<br>Ta=25℃ 90<br>25 IF=0.5A Ifsm<br>150 Ifsm 1cyc IR=1A 80<br>Irr=0.25*IR 70 8.3ms 8.3ms<br>8.3ms 20 n=10pcs 60 1cyc<br>100 15 50<br>40<br>10 30<br>50<br>AVE:66.0A 5 AVE:8.30ns 20<br>10<br>0 0 0<br>1 10 100<br>IFSM DISPERSION MAP trr DISPERSION MAP NUMBER OF CYCLES<br>IFSM-CYCLE CHARACTERISTICS<br>Mounted on epoxy board<br>1000<br>100 IM=10mA IF=0.5A 1<br>90 Rth(j-a)<br>80 Ifsm t 100 1m s time 0.8<br>70 300us<br>D=1/2<br>60 Rth(j-c) 0.6<br>50 10<br>Sin(θ＝180) DC<br>40 0.4<br>30<br>1<br>20 0.2<br>10<br>0 0.1 0<br>1 10 100 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2<br>TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT：Io(A)<br>Io-Pf CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>REVERSE RECOVERY TIME:trr(ns)<br>PEAK SURGE TRANSIENT<br>FORWARD POWER DISSIPATION:Pf(W)<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.05 - Rev.C** 2/3 Data Sheet **RSX101M-30** **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 2 3 3<br>2.5 0A Io 2.5 0 A Io<br>1.5 2 DC 0V t DVR=15V=t/TVR 2 DC 0V t D=t/T VR=15VVR<br>T Tj=150℃ T Tj=150℃<br>1 1.5 1.5<br>D=1/2 D=1/2 D=1/2<br>DC 1 1<br>0.5<br>0.5 Sin(θ＝180) 0.5 Sin(θ＝180)<br>Sin(θ＝1 80)<br>0 0 0<br>0 10 20 30 0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>REVERSE VOLTAGE:VR(V) AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>VR-PR CHARACTERISTICS Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>30<br>No break at 30kV<br>25<br>20<br>15<br>10<br>AVE:10.8kV<br>5<br>0<br>C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>ESD DISPERSION MAP<br>(W)<br>R<br>REVERSE POWER DISSIPATION:P AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>ELECTROSTATIC<br>DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.05 - Rev.C** 3/3 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 29, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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