RS1KFP
Standard Recovery Diode, 800 V, 1.2 A, Single, 1.3 V, 300 ns, 50 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: SOD-123HE
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 50A
- Reverse Recovery Time: 300ns
- Average Forward Current: 1.2A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.095 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Surface Mount Fast Recovery Rectifiers ## RS1JFP - RS1MFP **==> picture [118 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>2<br>1<br>1 eo Ss<br>Band Indicates Cathode<br>SOD-123EP<br>CASE 425AC<br>**----- End of picture text -----**<br> ## **Features** - Low Power Loss, High Efficiency - Larger Cathode Pad for Improved Power Dissipation **==> picture [69 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> qo<br>1 2<br>Cathode Anode<br>**----- End of picture text -----**<br> - Ultra Thin Profile − Package Height <1.0 mm - High Surge Capacity - Low Forward Voltage: 1.3 V Maximum ## **MARKING DIAGRAM** - UL Flammability 94V-0 Classification - MSL 1 per J-STD-020 - RoHS Compliant / Green Molding Compound - Industrial Device Qualified per AEC-Q101 Standards * See Authorized Use Policy **==> picture [62 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> 1 ZxLSY<br>**----- End of picture text -----**<br> xLS = Specific Device Code (x = J, K, M) Z = Assembly Plant Code Y = 1-Digit Weekly Date Code ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |RS1JFP|SOD-123EP|3000 / Tape & Reel| |RS1KFP|SOD-123EP|3000 / Tape & Reel| |RS1MFP|SOD-123EP|3000 / Tape & Reel| - For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2026 − Rev. 2** **RS1MFP/D** ## **RS1JFP − RS1MFP** ## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**|||**Unit**| |||**RS1JFP**|**RS1KFP**|**RS1MFP**|| |VRRM|Repetitive Peak Reverse Voltage|600|800|1000|V| |VRMS|RMS Reverse Voltage|420|560|700|V| |VR|DC Blocking Voltage|600|800|1000|V| |IF(AV)|Average Forward Rectified Current|1.2|||A| |IFSM|Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave Superimposed on Rated Load|50|||A| |TJ|Operating Junction Temperature Range|−55 to +150|||°C| |TSTG|Storage Temperature Range|−55 to +150|||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** (Note 1) (TA = 25 ° C unless otherwise noted) **Symbol Parameter Value** ~~=~~ **Unit** JL Typical Thermal Characteristics, Junction-to-Lead (Note 2) 12 ° C/W ~~aa a~~ R JA Typical Thermal Resistance, Junction-to-Ambient 140 ° C/W 1. Per JESD51-3 recommended thermal test board. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm. 2. Thermocouple soldered at cathode lead. **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**<br>~~a~~|**Parameter**<br>~~a~~<br>~~a~~|**Conditions**<br>~~a~~<br>~~a~~|**Min**<br>~~a~~<br>~~a~~|**Typ**<br>~~a~~<br>~~a~~|**Max**<br>~~a~~<br>~~a~~|**Unit**<br>~~a~~<br>~~a~~| |VF<br>~~a~~|Instantaneous Forward Voltage (Note 3)<br>~~a~~|IF= 1.2 A<br>~~a~~|~~a~~|~~a~~|1.3<br>~~a~~|V<br>~~a~~| |IR<br>~~a~~|Reverse Current at Rated VR<br>~~a~~|TJ= 25°C<br>~~a~~|~~a~~|~~a~~|5<br>~~a~~|A<br>~~a~~| |||TJ= 125°C|||150|| |CJ<br>~~a~~|Junction Capacitance<br>~~a~~<br>~~a~~|VR= 0 V, f = 1 MHz<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|18<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~| |Trr<br>~~a~~|Reverse Recovery Time<br>~~a~~|IF= 0.5 A, IR= 1 A, Irr= 0.25 A<br>~~a~~|~~a~~|~~a~~|300<br>~~a~~|ns<br>~~a~~| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse test with PW = 300 s, 1% duty cycle. > **www.onsemi.com Share Feedback** ~~ee:~~ **2** Your Opinion Matters eee **RS1JFP − RS1MFP** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [237 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2 RESISTIVE OR<br>INDUCTIVE LOAD<br>0<br>0 25 50 75 100 125 150<br>CASE TEMPERATURE ( ° C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **Figure 1. Maximum Forward Current Derating Voltage** **==> picture [237 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 100 SSS SSS SSS SSS<br>——E——a eees ( a<br>a es ee ee es eeee -| ae 7 aa n<br>10 ee a TJ = 125 ° C eese ie<br>= SS oF<br>po<br>1 pf<br>SSa SSeeSSSBS<br>po ee<br>0.1<br>SSSSS SSSSSS] TJ = 25 SSS ° C S| ]<br>0.01 | —~yT |<br>0 20 40 60 80 100 120 140<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>A)<br>CURRENT (<br>INSTANTANEOUS REVERSE<br>**----- End of picture text -----**<br> **Figure 2. Typical Reverse Characteristics** **==> picture [237 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 100 ee<br>aa SO<br>ee ee ee eee<br>a a a<br>SS ee<br>a a Se eel<br>10 lllpt<br>aeS<br>pos<br>po TT TT<br>PT TE TT TT<br>8.3 ms Single<br>Half Sine Wave<br>1 tl el<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>Figure 3. Maximum Non-Repetitive Forward Surge<br>Current<br>100<br>f = 1.0 MHz<br>po<br>eee eee Vsig = 50 mVp-p LH<br>rT CT TTT UI]<br>PT EETTT<br>PTE TUTTEEETTT<br>10 ||a |a ||<br>PFes Ess EHH FE EFF<br>Pe sot<br>a a<br>PT ETE TE<br>a en<br>1 Ai cA<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CURRENT (A)<br>PEAK FORWARD SURGE<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Junction Capacitance** **==> picture [233 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10 ——a<br>aeYAa<br>a |<br>a ee ee ee<br>ee en<br>a ee ee ee ee e<br>1<br>JP|| |EffA | |||<br>aAA es |<br>a<br>a ee ee es ee ee ee e e<br>a ee | ee ee ee ee<br>a ey ee ee ee e e<br>0.1<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>FORWARD VOLTAGE (V)<br>CURRENT (A)<br>INSTANTANEOUS FORWARD<br>**----- End of picture text -----**<br> **Figure 4. Typical Instantaneous Forward Characteristics** **Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **RS1JFP − RS1MFP** ## **REVISION HISTORY** |**Revision**<br>**Description of Changes**<br>**Date**<br>2<br>Converted the document to**onsemi**format.<br>5/21/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~| |---| |on the noted approval dates.| > **www.onsemi.com Share Feedback** ~~SS?~~ **4** Your Opinion Matters MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−123EP** CASE 425AC ISSUE O DATE 31 AUG 2016 **==> picture [267 x 416] intentionally omitted <==** **----- Start of picture text -----**<br> 3.00<br>2.60<br>1.95 1.15<br>1.65 0.85<br>0.30<br>1.00 0.10<br>0.75<br>3.90<br>3.50<br>2.05 2.05<br>1.65 1.65<br> 0.40 1.25<br>0.85<br> 0.25<br>2.30 1.20<br>1.90 0.55<br>**----- End of picture text -----**<br> **==> picture [213 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> 0.55<br> 1.40<br>2.30 1.25<br>**----- End of picture text -----**<br> ## LAND PATTERN RECOMMENDATION LONG PAD IS CATHODE ## NOTES: - A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE. - B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. **DOCUMENT NUMBER: 98AON13723G DESCRIPTION: SOD−123EP** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 14, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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