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RS1E200BNTB

Power MOSFET, N Channel, 30 V, 20 A, 3900 µohm, HSOP, Surface Mount

  • Manufacturer: ROHM
  • Product type: Single MOSFETs
  • Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Pow
  • MSL: -
  • SVHC: Lead (23-Jan-2024)
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 25W
  • Transistor Mounting: Surface Mount
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: HSOP
  • Drain Source Voltage Vds: 30V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 20A
  • Drain Source On State Resistance: 3900µohm
  • Gate Source Threshold Voltage Max: 2.5V
Delivery and price
Units per pack 5000
Price 0.275 €
Current stock 10+
Lead time 30 days

Updated at March 15, 2026