RR255M-400TR

RR255M-400 

Diodes 

## Rectifier diode 

## **RR255M-400** 

- **Applications** � **Dimensions** (Unit : mm) � **Land size figure** (Unit : mm) 

- General rectification 

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0.1±0.1<br>1.6±0.1     0.05 1.2<br>� Features<br>1) Small power mold type. (PMDU)<br>2) High reliability<br>� Construction<br>Silicon epitaxial planar  PMDU<br>0.9±0.1 � Structure<br>0.8±0.1<br>ROHM : PMDU<br>JEDEC :SOD-123<br>Manufacture Date<br>0.85<br>3.05<br>① 2.6±0.1 3.5±0.2<br>**----- End of picture text -----**<br>


## � **Taping dimensions** (Unit : mm) 

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4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05<br>1.81±0.1 4.0±0.1 φ1.0±0.1<br>1.5MAX<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>3.71±0.1<br>**----- End of picture text -----**<br>


## � **Absolute maximum ratings** (Ta=25°C) 

|�**Absolute maximum ratings**(Ta=25°C)||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Absolutepeak reverse voltage|VR|400|V|
|Average rectified forward current(*1)|Io|0.7|A|
|Forward current surgepeak（1pilse/4S t=500us）|IFRM|150|A|
|Junction temperature|Tj|150|℃|
|Storage temperature|Tstg|-55 to +150|℃|



(*1)Mounting on epoxy board. 180°Half sine wave 

## � **Electrical characteristic** (Ta=25°C) 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VF|-|-|0.98|V|IF=0.7A|
|Reverse current|IR|-|-|1|uA|VR=400V|



Rev.B 1/3 

RR255M-400 

## Diodes 

## � **Electrical characteristic curves** 

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1000 10000 100<br>Ta=75℃ Ta=150℃ Ta=125℃ f=1MHz<br>Ta=125℃ 1000<br>100<br>Ta=75℃<br>Ta=150℃<br>100<br>Ta=25℃<br>10 10<br>Ta=25℃ 10 Ta2 ℃=-<br>1 1<br>Ta=-25℃<br>0.1 0.1 1<br>0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>920 500 100<br>Ta=25℃ 450 Ta=25℃ 90 Ta=25℃<br>IF=0.7A VR=400V f=1MHz<br>910 n=30pcs 400 n=30pcs 80 VR=0V<br>350 70 n=10pcs<br>900 300 60<br>250 50<br>890 200 40<br>AVE:892.5mV 150 AVE:25.5nA 30 AVE:41.7pF<br>880 100 20<br>50 10<br>870 0 0<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>350 750 1000<br>300 Ifsm Ifsm50％ 1cyc 740730 TIFIRa==2=0.5A1A5℃ IM=10mAMounted on epoxy boardIF=0.35 Rth(j-a)<br>250 8.3ms500us 720710 Irr=0.25*IRn=10pcs 100 1 300tim<br>200<br>700 10 Rth(j-c)<br>150 690<br>100 680 AVE:695.9ns 1<br>AVE:192.0A 670<br>50<br>660<br>0 650 0.1<br>0.001 0.01 0.1 1 10 100 1000<br>trr DISPERSION MAP TIME:t(s)<br>IFSM DISRESION MAP Rth-t CHARACTERISTICS<br>1.5 2 2<br>0<br>0A Io 0A Io<br>0<br>1 D=1/2 DC 1.5 DC 0V t D=t/TVR=200VVR 1.5 DC 0V t D=t/VR=200 VR<br>T Tj=150℃ T Tj=150℃<br>Sin(θ＝180) 1 D=1/2 1 D=1/2<br>0.5<br>0.5 Sin(θ＝180) 0.5 Sin(θ＝180)<br>0 0 0<br>0 0.5 1 1.5 0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>AVERAGE RECTIFIED AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>FORWARD CURRENT：Io(A)Io-Pf CHARACTERISTICS Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>PEAK SURGE TRANSIENT<br>FORWARD CURRENT:IFSM(A)<br>RESERVE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (℃/W)<br>FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>**----- End of picture text -----**<br>


Rev.B 

2/3 

RR255M-400 

## Diodes 

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30<br>No break at 30kV<br>25<br>20<br>15<br>10<br>AVE:10.88kV<br>5<br>0<br>C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>ESD DISPERSION MAP<br>ELECTROSTATIC<br>DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br>


Rev.B 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1