RQ3E120ATTB

Power MOSFET, P Channel, 30 V, 39 A, 8000 µohm, HSMT, Surface Mount

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Manufacturer: ROHM
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-39A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: -
Qualification: -
Power Dissipation: 20W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: HSMT
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 39A
Drain Source On State Resistance: 8000µohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	5000
Price	0.238 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 15, 2026