RQ3E080GNTB

Power MOSFET, N Channel, 30 V, 18 A, 0.0167 ohm, HSMT, Surface Mount

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Manufacturer: ROHM
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Pow
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 14W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: HSMT
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 18A
Drain Source On State Resistance: 0.0167ohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	3000
Price	0.117 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 15, 2026