RP-SMKC08DE1

2013  Vol.1 _ **Industrial/Automotive SD Memory** 

## **Panasonic SD Memory Offers the High Reliability Demanded for Industrial/automotive Use** 

## **Secure Storage** 

## **Data Programming and Erase Endurance** 

**==> picture [74 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
e@ Wear Levelling<br>**----- End of picture text -----**<br>


e@ 

Maximising SD Memory Life 

Withstanding Repeated Reading Operations 

Static wear levelling controls written data, including fixed data. Various use cases eliminate intensive data writing and maximise the lifetime of the SD card. 

Automatically refreshes the bit errors that accumulate over time, before they exceed the threshold. (Accumulated bit errors are detected from read data.) 

- This function does not guarantee permanent data retention. 

**==> picture [250 x 84] intentionally omitted <==**

**----- Start of picture text -----**<br>
High PanasonicController Damage occurs due to  PanasonicController<br>intensive<br>Program  programing<br>and Erase  and erasing<br>Cycles Maximising<br>the SD card's<br>Low lifetime with<br>uniform<br>programing<br>and erasing<br>Without wear levelling With wear  levelling function<br>**----- End of picture text -----**<br>


**==> picture [89 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
x: Correctable error bits<br>Refresh<br>Detects and corrects bit errors,<br>and automatically rewrites data.<br>**----- End of picture text -----**<br>


## **Power Failure Robustness** 

Dispersion of Writing Stress to NAND Flash Memory Intelligent data writing disperses the writing stress to NAND flash memory, to reduce program disturbances. 

## Protects saved data and device 

Unique Panasonic algorithms minimise data damage in the event of a power interruption. Even in the event that an error is generated, the controller recovers the data, restoring it to the condition prior to the error, and preventing errors from reaching the entire SD memory area. 

- Power Fail Robustness Mode firmware also available for more robust MLC system 

**==> picture [531 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 TB (Capacity)<br>2TB<br>1TB 2 TB<br>1 TB<br>SDXC Memory Card 512GB<br>512 GB<br>256GB<br>256 GB<br>UHS- I 128GB<br>= a<br>64 GB<br>SDHC Memory Card 32 GB 128 GB<br>al @<br>32 GB we ae a 64 GB<br>16 GB<br>Proceeding toward UHS- II<br>8 GB<br>SD Memory Card for even higher speed<br>4 GB<br>2 GB<br>2 GB<br>Standard speed Max. 22 MB/s Max. 95 MB/s Even higher speed<br>~2005 2006 2007 2008 2009 2010 2011 2012~ (year)<br>**----- End of picture text -----**<br>


## UHS-I (Ultra High Speed I) is a speed specification for SD Memory Cards that was established in 2010. Its features 

include a maximum bus interface speed of up to 104 MB/s. It utilizes conventional SD design assests and offers enhanced speeds. Three different modes (DDR50, SDR50 and SDR104) have been standardized for the UHS-I based on the application and objective. **UHS-I**[(Ultra High Speed)] **104MB/s** ih **Speed Specification and Performance 2010** — — — **of SD Memory Cards[UHS Speed Class 1]** (Years indicate the year that the standard was established.) **2006 HS**[(High Speed)] **25MB/s** 

(Class 10 was established in 2009) 

Panasonic SD memory 

features high endurance against static electricity, magnetism, and X-rays. 

Operation is assured even under High endurance against ICE 61000-4-2 compliance: harsh temperature conditions. Clears Electrostatic Discharge bending and twisting. A usable temperature range of Immunity Tests of 150-pF Bending 20 N (Newton) min. -40 ˚C to 85 ˚C maintains stable energy storage capacitance, load resistance (SD standard: 10 N) performance everywhere, from 15-kV aerial discharge, and extremely cold to intensely hot 330-Ω discharge resistance. Twisting torque 0.3 N•m (Newton meter) min. climates. resistance (SD standard: 0.15 N•m) 

Minimal damage from magnetic forces. 

Data is protected from X-rays. 

The internal card fuse protects against excess current and abnormal heating. 

JIS IPX7 compliance: Operable The internal card fuse protects against after submerging the product in excess current and abnormal heating. water (tap water, 1-m depth) for Even if excess current or abnormal heating 30 minutes. were to occur due to internal card damage * micro SD – Excluding SD adaptor use. caused by the device being used or the * Card only. environment, the built-in fuse will operate to prevent the SD Memory Card from overheating or igniting. 

Operable after being set onto a ISO 7816-1 compliance: Operable 1,000-gauss DC magnetic field for after 0.1 Gy (gray) of X-ray approx. 1 minute. irradiation. 

> **2000 DS**[(Default Speed)] **12.5MB/s** 

(Class 2,4,6 were established in 2006) 

|Bus Interface Standard|Conventional|**UHS-I**|**UHS-I**|**UHS-I**|
|---|---|---|---|---|
|Mode|HS|**DDR50**|**SDR50**|**SDR104**|
|Signal Amplitude|3.3 V Amplitude|1.8 V Amplitude|||
|Clock Frequency|50 MHz|50 MHz|100 MHz|208 MHz|
|Data Frequency|50 MHz|100 MHz|100 MHz|208 MHz|
|Logic Performance<br>(Bus Speed)|**25 MB/s**|**50 MB/s**|**50 MB/s**|**104 MB/s**|



- SDHC memory cards can be used with SDHC and SDXC host products. SDHC memory cards cannot be used with products that are solely compliant with SD memory cards. 

- SDXC memory cards can be used only with SDXC host products. SDXC memory cards cannot be used with SD and SDHC host products. Check if the device has an SDXC logo, or refer to the device's instruction manual or other manufacturer's information 

* Please note that using an SDXC Memory Card in a non-compatible computer or device may cause card compatibility problems or loss of data. 

## **Applications by Model** 

**==> picture [509 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
LevellingWear Data WritingIntelligent Refresh Recovery TemperatureResistance ElectrostaticResistance ResistanceImpact ResistanceMagnetic ResistanceX-Ray ResistanceWater Fuse<br>FX Series a a • —<br>P Series —<br>ee es ee es<br>-40 ˚C<br>microSD/ KC Series<br>ee es ee to FF<br>microSD/JC Series +85 ˚C ••• •• ••••<br>es UTtC~sC‘(‘CérLCOCOC*OCCdes<br>eSD (Flexible connection type) — —<br>eSD (Semiconductor mounting type) •••••• •••••• •••••• •••••• •••••• •••••• •••••• •• — —<br>ee ee<br>**----- End of picture text -----**<br>


* Based on Panasonic test results. Protection may not be possible in certain usage environments. The data stored inside a card cannot be guaranteed. 

- The SD Memory Card is intended for ordinary use in for home or professional devices and embedded systems. Consult with Panasonic in advance about uses for applications that require a high degree of reliability (uses that may have a serious impact on human lives, such as in nuclear power or social infrastructure applications.) 

## **— For more information —** 

http://panasonic.net/avc/sdcard/industrial_sd/ 

## **Media Business Unit, Business Solutions Group,** 

## **AVC Network System Company, Panasonic Corporation** 

- 1-15, Matsuo-cho, Kadoma, Osaka, 571-8504, Japan 

- The product colours shown in this printed material may vary from the actual colours. 

- Specifications and designs are subject to change without notice. 

- SDXC, SDHC, SD, and microSDHC Logos are trademarks of SD-3D, LLC. 

- As of January 1st, 2013. 

201301-INDUSTRY-E Printed in Japan 

**States of FG stored States of FG stored SLC and MLC** SLC **with electron: 2** MLC **with electron: 4** The NAND flash memory that is used in SD = Vth —_ Vth Bit compatibility example Memory Cards has Single Level Cells (SLC), 00 which each store 1 bit of data, and Multi Level 0 01 Cells (MLC), which each store 2 bits. The FX <— ~~BEE83~~ **<—** ~~**B** a2e8~~ ~~**e8**~~ 4 state per cell Series use SLCs to provide superior data 0V 2 state per cell1 bit 0V 10 s ~~ic~~ 2 bits retention and reliability. 1 _— 11 — distribution distribution 

**==> picture [543 x 309] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|SLC|FX Series|
|* 128MB/512MB SLC line-up also available|
|mm|
|||—~"|
|;|Se|
|SDHC UHS-I|
|class|©|Peru|21|apa|
|2cn|&|4Gp|83GB|16GB|
|UHS Speed Class 1|
|RP-SDF02G|:|1)|RP-SDF04G|RP-SDF08G|RP-SDF16G|
|meee|
|a|Performance Specifications|||
|Model|RP-SDF02G|RP-SDF04G|RP-SDF08G|RP-SDF16G|
|Capacity*|[1]|a|2 GB|4 GB|8 GB|16 GB|
|Flash Memory|Type|Single-Level Cell (SLC) NAND Flash Memory|
|Ver.3.01|
|SD Physical Specification|(No UHS-I Compliant)|Ver. 3.01 (UHS-I Compliant)|
|Speed Class|SD Speed Class 6|SD Speed Class10, UHS Speed Class 1|
|Po|
|Transfer Rate|Read|22 MB/s|90 MB/s|95 MB/s|
|(Max)*|[2]|Write|20 MB/s|40 MB/s|80 MB/s|
|Operating Temperature|-40 to +85 ˚C|
|by Panasonic|
|Controller|
|Functions|Static Wear Levelling, Intelligent Data Writing, Recovery Function from Power Failure, Refresh Function|
|Release date under consideration   *1: SD Memory utilise a portion of the memory for copy protection and other purposes. Therefore Usable capacity will be less.  *2: Speed performance is subject to change.|*|Size|32.0 x 24.0 mm|

**----- End of picture text -----**<br>


**==> picture [519 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLC<br>— P Series<br>GD Series<br>=e<br>aS Fame | Ze | Ze sz | Ze | 326<br>cLrass@ 4ce Bae 6ce xc 32ce 6468<br>RP-SDP04G RP-SDP08G RP-SDP16G RP-SDGD32G RP-SDGD64G<br>Performance Specifications<br>**----- End of picture text -----**<br>


## MLC KC Series ~~Le—~~ 

**==> picture [67 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
microSDHC UHS-I<br>**----- End of picture text -----**<br>


**==> picture [235 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
UHS Speed Class 1<br>ws) RP-SMKC04 RP-SMKC08<br>**----- End of picture text -----**<br>


**==> picture [53 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
RP-SMKC16<br>**----- End of picture text -----**<br>


## **Performance Specifications** 

**==> picture [401 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Capacity*|[1]|ee|4 GB|8|GB|16|GB|
|Flash Memory|Type|Multi-Level Cell (MLC) NAND Flash Memory|
|SD Physical Specification|Ver. 3.01 (UHS-I|Compliant)|
|Speed Class|SD Speed|Class 10,|UHS|Speed|Class 1|
|Transfer Rate|Read|45 MB/s|
|(Max)*|[2]|||Write|12 MB/s|
|Operating Temperature|-40 to +85 ˚C|
|by Panasonic|
|Controller|Functions|Static Wear Levelling, Intelligent Data Writing,|
|Recovery Function from Power Failure, Refresh Function|
|Size|15.0 x 11.0 mm (Max)|

**----- End of picture text -----**<br>


*1: SD Memory utilise a portion of the memory for copy protection and other purposes. Therefore Usable capacity will be less.  *2: Speed performance is subject to change. 

## MLC eSD (Flexible Connection Type) ~~(a~~ 

Products converted to SLC are also available on demand. Form factor of module can be customized. 

## **RP-SD04GP** (4 GB) CLASS@ **Performance Specificationspecificationsecifications** 

**==> picture [433 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|RP-SD04GP|RP-SD08GP|RP-SD16GP|
|(4 GB)|(8 GB)|(16 GB)|(Rear surface)|
|-|Performance Specificationspecificationsecifications|
|Model|RP-SD04GP|RP-SD08GP|RP-SD16GP|
|Capacity*|[1]|4 GB|8 GB|16 GB|
|Flash Memory|Type|Multi-Level Cell (MLC) NAND Flash Memory|
|SD Physical Specification|Ver. 3.01 (No UHS-I Compliant)|
|Speed Class|SD Speed Class 4|
|Transfer Rate (Max)*|[2]|Read|22 MB/s|
|Operating Temperature|-40 to +85 ˚C|
|by Panasonic|
|Controller|
|Functions|Static Wear Levelling, Intelligent Data Writing, Recovery Function from Power Failure, Refresh Function|
|||
|__|Size|30.0 x 24.0 mm|

**----- End of picture text -----**<br>


*1: SD Memory utilise a portion of the memory for copy protection and other purposes. Therefore Usable capacity will be less.  *2: Speed performance is subject to change. 

**==> picture [464 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|SDHC UHS-I|
|(224 pin)|
|UHS Speed Class 1|
|RP-SVBC04|RP-SVBC08|RP-SVBC16|
|VY|(4 GB)|(8 GB)|(16 GB)|(Rear surface)|
|CLAss(¢|
|Performance Specifications|
|F|Model|RP-SVBC04|RP-SVBC08|RP-SVBC16|
|Capacity*|[1]|Pt|4 GB|8 GB|16 GB|
|Flash Memory|Type|Multi-Level Cell (MLC) NAND Flash Memory|
|||
|SD Physical Specification|Ver. 3.01 (UHS-I Compliant)|
|Speed Class|SD Speed Class 10, UHS Speed Class 1|
|Transfer Rate|Read|90 MB/s|
|(Max)*|[2]|||[ae]|Write|12 MB/s|
|Operating Temperature|-40 to +85 ˚C|
|=|
|by Panasonic|
|Controller|Static Wear Levelling, Intelligent Data Writing,|
|Functions|
|Recovery Function from Power Failure, Refresh Function|
|Size|18.0 x 12.2 mm|

**----- End of picture text -----**<br>


*1: SD Memory utilise a portion of the memory for copy protection and other purposes. Therefore Usable capacity will be less.  *2: Speed performance is subject to change. Capacity*[1] 4 GB 8 GB 16 GB Flash Memory ~~—~~ Type ~~po~~ Multi-Level Cell (MLC) NAND Flash Memory > cad SD Physical Specification Ver.3.01 (No UHS-I Compliant) **Environmental Specifications** (Common to all models) Applicable EMC Standards STransfer Rate Oppeed Classerating Tem(pMaxerature)*[2] ~~|~~ Read SD -40 to +85 ˚CSp22 MB/seed Class 4 Se ~~‘~~ a ~~*~~ a) oll tdrae4k v ~~™mnal~~ Tempe-ratureHumidit((Non-oOy peratinperating)g) 5 to 95 % -40 to +85 ˚C -40 to +85 ˚C(No condensation(1,000 h) ) VibrationShock RoHS Directive Comp15 G1atibilit,000 Gp-yp 1) VCCI Class B (Option B)2) FCC Part 15 Class B (Verification)3) EC Directive 89/336/EECEN55022: 2006 Class BEN55024: 1998 +A1: 2001 +A2: 2003 by Panasonic i, Lod | \ - S| : Panasonic Panasonic 4) AS/NZS CISPR Pub22: 2006 Controller Static Wear Levelling, Intelligent Data Writing, Functions • Panasonic industrial/automotive use SD memory has a unique Panasonic function that reports data such as bad blocks, writing cycles, ~~| |~~ Recovery Function from Power Failure, Refresh Function | re> l6ce | Baez Madein Japan ~~as~~ and the SD memory internal connection status. Size 32.0 x 24.0 mm • A special B to B support system also allows Panasonic to offer consultation concerning customisation upon customer request. 

> Release date under consideration   *1: SD Memory utilise a portion of the memory for copy protection and other purposes. Therefore Usable capacity will be less. : *2: Speed performance is subject to change. 

For details, consult a salesperson.