RJK2017DPP-M0#T2

Preliminary Datasheet 

## **RJK2017DPP-M0** 

## 200V - 45A - MOS FET Hi h S eed Power Switchin g p g 

R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 

## **Features** 

- Low on-resistance 

   - RDS(on) = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25  C) 

- Low leakage current 

- High speed switching 

## **Outline** 

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RENESAS Package code: PRSS0003AF-A<br>(Package name: TO-220FL)<br>D<br>1. Gate<br>2. Drain<br>G<br>3. Source<br>1<br>2<br>3 S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Ta = 25°C) 

||||(Ta = 25°C)|
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to source voltage|VDSS|200|V|
|Gate to source voltage|VGSS|30|V|
|Drain current|ID<br>Note4|45|A|
|Drainpeak current|ID(pulse)<br>Note1|135|A|
|Body-drain diode reverse drain current|IDR|45|A|
|Avalanche current|IAP<br>Note3|12|A|
|Avalanche energy|EAR<br>Note3|9.6|mJ|
|Channel dissipation|PchNote2|30|W|
|Channel to case thermal impedance|ch-c|4.17|C/W|
|Channel temperature|Tch|150|C|
|Storage temperature|Tstg|–55 to +150|C|



Notes: 1. PW  10 s, duty cycle  1% 

2. Value at Tc = 25C 

3. STch = 25C, Tch  150C 

4. Limited by maximum safe operation area 

R07DS0664EJ0100  Rev.1.00 Feb 03, 2012 

Page 1 of 6 

**RJK2017DPP-M0** 

**Preliminary** 

## **Electrical Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test conditions**|
|Drain to source breakdown voltage|V(BR)DSS|200|—|—|V|ID= 10 mA, VGS= 0|
|Zerogate voltage drain current|IDSS|—|—|1|A|VDS= 200 V, VGS= 0|
|Gate to source leak current|IGSS|—|—|1|A|VGS=30 V, VDS= 0|
|Gate to source cutoff voltage|VGS(off)|2|—|4|V|VDS= 10 V, ID= 1 mA|
|Static drain to source on state<br>resistance|RDS(on)|—|0.036|0.047||ID= 22.5 A, VGS= 10 VNote5|
|Input capacitance|Ciss|—|4800|—|pF|VDS= 25 V<br>VGS= 0<br>f = 1 MHz|
|Output capacitance|Coss|—|290|—|pF||
|Reverse transfer capacitance|Crss|—|90|—|pF||
|Turn-on delaytime|td(on)|—|50|—|ns|ID= 22.5 A<br>VGS= 10 V<br>RL= 4.5<br>Rg = 10|
|Rise time|tr|—|40|—|ns||
|Turn-off delaytime|td(off)|—|95|—|ns||
|Fall time|tf|—|40|—|ns||
|Totalgate charge|Qg|—|66|—|nC|VDD= 160 V<br>VGS= 10 V<br>ID= 45 A|
|Gate to source charge|Qgs|—|26|—|nC||
|Gate to drain charge|Qgd|—|16|—|nC||
|Body-drain diode forward voltage|VDF|—|0.88|1.35|V|IF= 45 A, VGS= 0Note5|
|Body-drain diode reverse recovery time|trr|—|150|—|ns|IF= 45 A, VGS= 0<br>diF/dt = 100 A/s|



Notes: 5. Pulse test 

R07DS0664EJ0100  Rev.1.00 Feb 03, 2012 

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**RJK2017DPP-M0** 

**Preliminary** 

## **Main Characteristics** 

Maximum Safe Operation Area 

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1000<br>100<br>10<br>1 Operation in this<br>area is limited by<br>R<br>DS(on)<br>0.1<br>Tc = 25 ° C<br>1 shot<br>0.01<br>0.1 1 10 100 1000<br>Drain to Source Voltage   VDS  (V)<br>PW = 100<br>μ s<br>10<br>  (A) μ s<br>D<br>Drain Current   I<br>**----- End of picture text -----**<br>


Typical Output Characteristics 

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100<br>10 V 7 V 6.5 V<br>80<br>Pulse Test<br>Ta = 25 ° C<br>60<br>6 V<br>40<br>5.5 V<br>20<br>0 4 8 12 16 20<br>Drain to Source Voltage    VDS  (V)<br>5 V<br>VGS = 4.5 V<br>   (A)<br>D<br>Drain Current    I<br>**----- End of picture text -----**<br>


Static Drain to Source on State Resistance vs. Drain Current (Typical) 

Typical Transfer Characteristics 

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100 1<br>VDS = 10 V Ta = 25 VGS = 10 V ° C<br>Pulse Test<br>Pulse Test<br>10<br>0.1<br>Tc = 75 ° C 25 ° C<br>1<br>− 25 ° C<br>0.1 0.01<br>0 2 4 6 8 10 1 10 100<br>Gate to Source Voltage   VGS  (V) Drain Current    ID   (A)<br>Static Drain to Source on State Resistance  Body-Drain Diode Reverse<br>vs. Temperature (Typical) Recovery Time (Typical)<br>0.25 1000<br>VGS = 10 VGS = 10 V = 10 V<br>Pulse Test<br>0.20<br>0.15<br>22.5 A 100<br>0.10 I D  = 45 A<br>0.05 12.5 A<br>di / dt = 100 A /  μ s<br>VGS = 0, Ta = 25 ° C<br>0 10<br>-25 0 25 50 75 100 125 150 0.1 1 10 100 1000<br>Case Temperature    Tc  ( ° C) Reverse Drain Current    IDR   (A)<br>) Ω<br>  (<br>  (A) DS(on)<br>D<br>Drain Current   I<br>                                    R<br>Drain to Source on State Resistance<br>) Ω<br>  (<br>DS(on)<br>Reverse Recovery Time   trr  (ns)<br>                                             R<br>**----- End of picture text -----**<br>


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Static Drain to Source on State Resistance<br>vs. Temperature (Typical)<br>0.25<br>VGS = 10 VGS = 10 V = 10 V<br>Pulse Test<br>0.20<br>0.15<br>22.5 A<br>0.10 I D  = 45 A<br>0.05 12.5 A<br>0<br>-25 0 25 50 75 100 125 150<br>Case Temperature    Tc  ( ° C)<br>) Ω<br>  (<br>DS(on)<br>                                             R<br>Static Drain to Source on State Resistance<br>**----- End of picture text -----**<br>


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**RJK2017DPP-M0** 

**Preliminary** 

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 Typical Capacitance vs.<br>Drain to Source Voltage<br>10000<br>Ciss<br>1000<br>Coss<br>100<br>V GS = 0 Crss<br>f = 1 MHz<br>Ta = 25 ° C<br>10<br>0 20 40 60 80 100<br>Drain to Source Voltage    VDS  (V)<br>Reverse Drain Current vs.<br>Source to Drain Voltage (Typical)<br>100<br>VGS = 0 V<br>Ta = 25 ° C<br>80 Pulse Test<br>60<br>40<br>20<br>0 0.4 0.8 1.2 1.6 2.0<br>Source to Drain Voltage   VSD  (V)<br>Capacitance   C  (pF)<br>  (A)<br>DR<br>Reverse Drain Current   I<br>**----- End of picture text -----**<br>


Dynamic Input Characteristics (Typical) 

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400 16<br>ID = 45 A VGS<br>Ta = 25 ° C<br>V DD =  50  V<br>300 1 00 V 12<br>16 0 V<br>200 8<br>VDS<br>100 VDD = 160 V 4<br>100 V<br> 50 V<br>0<br>0 20 40 60 80 100<br>Gate Charge   Qg  (nC)<br>Gate to Source Cutoff Voltage<br>vs. Case Temperature (Typical)<br>5<br>VDS = 10 V<br>4<br>ID = 10 mA<br>1 mA<br>3<br>2<br>0.1 mA<br>1<br>0<br>-25 0 25 50 75 100 125 150<br>Case Temperature   Tc  ( ° C)<br>  (V)   (V)<br>DS GS<br>Drain to Source Voltage   V Gate to Source Voltage   V<br>  (V)<br>GS(off)<br>Gate to Source Cutoff Voltage                             V<br>**----- End of picture text -----**<br>


R07DS0664EJ0100  Rev.1.00 Feb 03, 2012 

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**RJK2017DPP-M0** 

**Preliminary** 

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 Normalized Transient Thermal Impedance vs. Pulse Width<br>3<br>D = 1 Tc = 25 ° C<br>1<br>0.5<br>0.3 0.2<br>0.1<br>0.1<br>0.05<br>0.03 θ ch – c(t) =   s (t) •    ch – c γ θ<br>θ ch – c = 4.17 ° C/W, Tc = 25 ° C<br>0.01<br>PDM D = [PW] T<br>0.003 PW<br>T<br>0.001<br>10  μ 100  μ 1 m 10 m 100 m 1 10<br>Pulse Width   PW  (s)<br>Switching Time Test Circuit Waveform<br>Vin Monitor Vout 90%<br>Monitor<br>D.U.T.<br>RL Vin 10%<br>10  Ω<br>Vout 10% 10%<br>Vin VDD<br>10 V = 100 V<br>90% 90%<br>td(on) tr td(off) tf<br>0.02<br>0.01<br>1shot pulse<br>s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


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**RJK2017DPP-M0** 

**Preliminary** 

## **Package Dimensions** 

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PackaTO-220FLge Name JEITA Packa ⎯ ge Code RENESAS CodePRSS0003AF-A Previous CodeTO-220FL MASS1.5g[Typ.] Unit: mm<br>10.0 ± 0.3 2.8 ± 0.2<br>3.2 ± 0.2<br>1.15 ± 0.2<br>1.15 ± 0.2<br>0.75 ± 0.15<br>0.40 ± 0.15<br>2.54 ± 0.25 2.54 ± 0.25<br>0.3 0.3<br> ±   ±<br>0.3 3.0 6.5<br> ±<br>15.0<br>0.3<br>0.5  ±<br> ±  3.6<br>12.5<br>0.2<br> ±<br>4.5<br>0.2<br> ±<br>2.6<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**|||
|---|---|---|
|**Orderable Part Number**|**Quantity**|**Shipping Container**|
|RJK2017DPP-M0#T2|600pcs|Box(Tube)|



R07DS0664EJ0100  Rev.1.00 Feb 03, 2012 

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## Notice 

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© 2012 Renesas Electronics Corporation. All rights reserved. Colophon 1.1