RJF0619JPD-00#J3

Target Specifications Datasheet 

## **RJF0619JPD** 

60V, 30A Silicon N Channel Thermal FET Power Switchin g 

R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 

## **Description** 

This FET has the over temperature shut-down capability sensing to the junction temperature.  This FET has the built-in over temperature shut-down circuit in the gate area.  And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. 

## **Features** 

- Logic level operation (4 V Gate drive). 

- Built-in the over temperature shut-down circuit. 

- High endurance capability against to the short circuit. 

- Latch type shut down operation (need 0 voltage recovery). 

- Built-in the current limitation circuit. 

- Power supply voltage applies 12 V and 24 V. 

- AEC-Q101 Compliant 

- Endurance capability against to ESD. 

## **Outline** 

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RENESAS Package code: PRSS0004ZD-C<br>(Package name: DPAK (S) )<br>D<br>4<br>1. Gate<br>Current  2. Drain<br>G Gate Resistor Limitation  3. Source<br>Circuit 4. Drain<br>1<br>2 3 Temperature Latch Gate<br>Sensi ng Circuit S hut-down<br>Circuit Circuit<br>S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Ta = 25°C) 

||||(Ta = 25°C)|
|---|---|---|---|
|**Item **|**Symbol **|**Ratings**|**Unit**|
|Drain to source voltage|VDSS|60|V|
|Gate to sourcevoltage|VGSS|16|V|
|Gate to sourcevoltage|VGSS|–2.5|V|
|Drain current|ID<br>Note3|30|A|
|Body-draindiodereverse draincurrent|IDR|30|A|
|Avalanche current|IAP<br>Note 2|6.7|A|
|Avalanche energy|EAR<br>Note 2|192|mJ|
|Channeldissipation|Pch Note 1|40|W|
|Channeltemperature|Tch|150|°C|
|Storage temperature|Tstg|–55 to +150|°C|



Notes: 1. Value at Tc = 25 ° C 

2. Tch = 25 ° C, Rg ≥ 50 Ω 

3. It provides by the current limitation lower bound value. 

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**Target Specifications** 

**RJF0619JPD** 

## **Typical Operation Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Input voltage|VIH|3.5|—|—|V||
||VIL|—|—|1.2|V||
|Input current<br>(Gate non shut down)|IIH1|—|—|100|μA|Vi = 8 V, VDS= 0|
||IIH2|—|—|50|μA|Vi = 3.5 V, VDS= 0|
||IIL|—|—|1|μA|Vi = 1.2 V, VDS= 0|
|Input current<br>(Gate shut down)|IIH(sd)1|—|0.8|—|mA|Vi = 8 V, VDS= 0|
||IIH(sd)2|—|0.35|—|mA|Vi = 3.5 V, VDS= 0|
|Shut down temperature|Tsd|—|175|—|°C|Channel temperature|
|Gate operation voltage|Vop|3.5|—|12|V||
|Drain current<br>(Current limitation value)|ID limt|30|—|—|A|VGS= 5 V, VDS= 10 VNote 4|



Note; 4. Pulse test 

## **Electrical Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Drain current|ID1|—|—|45|A|VGS= 3.5 V, VDS= 10 V Note 5|
||ID2|—|—|10|mA|VGS= 1.2 V, VDS= 10 V|
||ID3|30|—|—|A|VGS= 5 V, VDS= 10 V Note 5|
|Drain to source breakdown<br>voltage|V(BR)DSS|60|—|—|V|ID= 10 mA, VGS= 0|
|Gate to source breakdown<br>voltage|V(BR)GSS|16|—|—|V|IG= 800μA, VDS= 0|
||V(BR)GSS|–2.5|—|—|V|IG= –100μA, VDS= 0|
|Gate to source leak current|IGSS1|—|—|100|μA|VGS= 8 V, VDS= 0|
||IGSS2|—|—|50|μA|VGS= 3.5 V, VDS= 0|
||IGSS3|—|—|1|μA|VGS= 1.2 V, VDS= 0|
||IGSS4|—|—|–100|μA|VGS= –2.4 V, VDS= 0|
|Input current (shut down)|IGS(OP)1|—|0.8|—|mA|VGS= 8 V, VDS= 0|
||IGS(OP)2|—|0.35|—|mA|VGS= 3.5 V, VDS= 0|
|Zerogate voltage drain current|IDSS|—|—|10|μA|VDS= 32 V, VGS= 0, Tc = 110°C|
|Gate to source cutoff voltage|VGS(off)|1.1|—|2.1|V|VDS= 10 V, ID= 1 mA|
|Forward transfer admittance||yfs||12|27|—|S|ID= 15 A, VDS= 10 V Note 5|
|Static drain to source on state<br>resistance|RDS(on)|—|33|40|mΩ|ID= 15 A, VGS= 4 VNote 5|
||RDS(on)|—|25|30|mΩ|ID= 15 A, VGS= 10 V Note 5|
|Output capacitance|Coss|—|523|—|pF|VDS= 10 V, VGS= 0, f = 1MHz|
|Turn-on delaytime|td(on)|—|3.8|—|μs|VGS= 10 V, ID= 15 A, RL= 2Ω|
|Rise time|tr|—|13.5|—|μs||
|Turn-off delaytime|td(off)|—|4.1|—|μs||
|Fall time|tf|—|7.3|—|μs||
|Body-drain diode forward<br>voltage|VDF|—|0.9|—|V|IF= 30 A, VGS= 0|
|Body-drain diode reverse<br>recoverytime|trr|—|110|—|ns|IF= 30 A, VGS= 0<br>diF/dt = 50 A/μs|
|Over load shut down<br>operation timeNote 6|tos1|—|0.34|—|ms|VGS= 5 V, VDD= 16 V|
||tos2|—|0.23|—|ms|VGS= 5 V, VDD= 24 V|



Notes: 5. Pulse test 

6. Including the junction temperature rise of the over loaded condition. 

R07DS1108EJ0100  Rev.1.00 Sep. 02, 2013 

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**Target Specifications** 

**RJF0619JPD** 

## **Main Characteristics** 

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Power vs. Temperature Derating Maximum Safe Operation Area<br>50 100<br>Thermal shut down<br>Operation area<br>40<br>10<br>30<br>DC Operation 1 m s<br>(Tc = 25°C)<br>20<br>1 PW = 10 ms<br>10 Operation in<br>this area is<br>limited by RDS (on)<br>0 0.1<br>0 50 100 150 200 0.01 0.1 1 10 100<br>Case Temperature    Tc  (°C) Drain to Source Voltage  VDS  (V)<br>Typical Output Characteristics Typical Transfer Characteristics<br>50 30<br>9 V 10 V Pulse Test VDS = 10 V<br>Pulse Test<br>8 V<br>40<br>7 V<br>4 V 20<br>30 Tc = –40°C<br>VGS = 3 V 25°C<br>20<br>10<br>10<br>0 0<br>0 2 4 6 8 10 0 1 2 3 4 5<br>Drain to Source Voltage    VDS   (V) Gate to Source Voltage    VGS  (V)<br>   (A)<br>D<br>Drain Current    I<br>Channel Dissipation    Pch  (W)<br>   (A)    (A)<br>D D<br>Drain Current    I Drain Current    I<br>**----- End of picture text -----**<br>


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Drain to Source Saturation Voltage vs.<br>Gate to Source Voltage<br>800<br>Pulse Test<br>700<br>600<br>500<br>ID = 15 A<br>400<br>300 10 A<br>200<br>5 A<br>100<br>0<br>0 2 4 6 8 10<br>Gate to Source Voltage   VGS  (V)<br>   (mV)<br>DS (on)<br>Drain to Source Saturation Voltage                                    V<br>**----- End of picture text -----**<br>


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Static Drain to Source on State Resistance<br>vs. Drain Current<br>1000<br>Pulse Test<br>100<br>VGS = 4V<br>10V<br>10<br>1<br>1 10 100<br>Drain Current    ID  (A)<br>)Ω<br>    (m<br>DS (on)<br>Drain to Source on State Resistance                                    R<br>**----- End of picture text -----**<br>


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**Target Specifications** 

**RJF0619JPD** 

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Static Drain to Source on State Resistance Forward Transfer Admittance vs.<br>vs. Temperature Drain Current<br>60 100<br>Pulse Test ID = 15 A VDS = 10 V Tc = –40°C<br>55 Pulse Test<br>10 A<br>50 15 A<br>5 A 25°C<br>45<br>10<br>40 V GS = 4 V<br>35 10 A<br>30 5 A 1 150 ° C<br>25 VGS = 10 V<br>20<br>15<br>10 0.1<br>–50 –25 0 25 50 75 100 125 150 0.1 1 10 100<br>Case Temperature    Tc   (°C) Drain Current   ID   (A)<br>Body-Drain Diode Reverse<br>Recovery Time Switching Characteristics<br>1000 100<br>V GS  = 10 V, V DD  = 30 V<br>PW = 300 μs, duty ≤ 1 %<br>100<br>tr<br>10<br>t f<br>10<br>t d(off)<br>td(on)<br>di / dt = 50 A / μs<br>VGS = 0, Ta = 25°C<br>1 1<br>0.1 1 10 100 0.1 1 10 100<br>Reverse Drain Current    IDR   (A) Drain Current    ID  (A)<br>Reverse Drain Current vs. Typical Capacitance vs.<br>Source to Drain Voltage Drain to Source Voltage<br>30 10000<br>Pulse Test<br>25 3000<br>20 1000<br>15 VGS = 5 V 300 Coss<br>10 100<br>0 V<br>5 30 V GS = 0<br>f = 1 MHz<br>0 10<br>0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60<br>Source to Drain Voltage  VSD  (V) Drain to Source Voltage   VDS   (V)<br>)Ω<br>    (m<br>DS (on)<br>             R<br>Forward Transfer Admittance  |yfs|   (S)<br>Static Drain to Source on State Resistance<br>s)<br>μ<br>Switching Time   t  (<br>Reverse Recovery Time   trr  (ns)<br>  (A)<br>DR<br>Capacitance   C  (pF)<br>Reverse Drain Current   I<br>**----- End of picture text -----**<br>


R07DS1108EJ0100  Rev.1.00 Sep. 02, 2013 

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**Target Specifications** 

**RJF0619JPD** 

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Gate to Source Voltage vs. Shutdown Case Temperature vs.<br>Shutdown Time of Load-Short Test Gate to Source Voltage<br>16 200<br>14<br>180<br>12<br>10<br>160<br>8<br>140<br>6 24 V VDD = 16 V<br>4<br>120 ID = 0.5 A<br>2<br>0 100<br>10 100 1000 10000 0 2 4 6 8 10<br>Shutdown Time of Load-Short Test    Pw  (μS) Gate to Source Voltage    VGS   (V)<br>Normalized Transient Thermal Impedance vs. Pulse Width<br>3<br>Tc = 25°C<br>D = 1<br>1<br>0.5<br>0.3<br>θch - c(t) = γs (t) • θch - c<br>0.1 θch - c = 3.125 ° C/W, Tc = 25 ° C<br>PDM D = [PW]<br>T<br>0.03<br>PW<br>T<br>0.01<br>10 μ 100 μ 1 m 10 m 100 m 1 10<br>Pulse Width   PW  (S)<br>0.2<br>0.05<br>0.1<br>0.02<br>0.01<br>1shot pulse<br>C)<br>   (V) °<br>GS<br>Gate to Source Voltage    V<br>Shutdown Case Temperature   Tc  (<br> s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


R07DS1108EJ0100  Rev.1.00 Sep. 02, 2013 

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**Target Specifications** 

**RJF0619JPD** 

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Switching Time Test Circuit Waveform<br>90%<br>Vin Monitor Vout<br>Monitor<br>D.U.T. Vin 10%<br>RL<br>Vout 1 0% 10%<br>Vin VDD<br>10 V 50 Ω = 30 V 90% 90%<br>td(on) tr td(off) tf<br>Avalanche Test Circuit Avalanche Waveform<br>V<br>L 1 (BR)DSS<br>VMonitorDS EAR =  2  L • IAP [2] • V(BR)DSS – VDD<br>IAP<br>Monitor<br>V<br>(BR)DSS<br>Rg D. U. T VDD IAP<br>Vin ID VDS<br>50 Ω<br>  10 V<br>VDD<br>0<br>**----- End of picture text -----**<br>


R07DS1108EJ0100  Rev.1.00 Sep. 02, 2013 

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**Target Specifications** 

**RJF0619JPD** 

## **Package Dimensions** 

**==> picture [482 x 323] intentionally omitted <==**

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Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.] Unit: mm<br>DPAK(S) SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g<br>6.5 ± 0.3 2.3 ± 0.2<br>5.6 ± 0.5 0.55 ± 0.1 (5.1)<br>0 – 0.25<br>(1.2)<br>0.55 ± 0.1<br>1.0 Max. 0.8 ± 0.1<br>2.29 ± 0.5 2.29 ± 0.5<br>05.<br> ±<br>5<br>1.<br>)(5.1<br>5.5 ± 0.5<br>1.2 Max<br>2.5 ± 0.5<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**|||
|---|---|---|
|**Orderable Part Number**|**Quantity**|**Shipping Container**|
|RJF0619JPD-00-J3|3000pcs|Taping|



Note: The symbol of 2nd "-" is occasionally presented as "#". 

R07DS1108EJ0100  Rev.1.00 Sep. 02, 2013 

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