RJE0607JSP-00#J0

Preliminary Datasheet 

## **RJE0607JSP** 

Silicon P Channel MOS FET Series Power Switchin g 

R07DS0123EJ0200 (Previous: REJ03G1876-0100) Rev.2.00 Sep 01, 2010 

## **Description** 

This FET has the over temperature shut-down capability sensing to the junction temperature.  This FET has the built-in over temperature shut-down circuit in the gate area.  And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. 

## **Features** 

- High endurance capability against to the short circuit. 

- Built-in the over temperature shut-down circuit. 

- Latch type shut down operation (need 0 voltage recovery). 

- Built-in the current limitation circuit. 

- Low on-resistance RDS(on) : 140 m  Typ, 260 m  Max (VGS = –10 V) 

- High density mounting 

## **Outline** 

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RENESAS Package code: PRSP0008DD-D<br>(Package name: SOP-8 (FP-8DAV))<br>6 5<br>8 7 D D D D<br>7 8 5 6<br>1 [2] [3 4] 1, 3          Source2, 4          Gate<br>2 Current  4 Current  5, 6, 7, 8  Drain<br>G Gate Resistor Limitation  G Gate Resistor Limitation<br>Circuit Circuit<br>TemperatureSensiCircuit ng LatchCircuit Gate Shut- Circuitdown TemperatureSensiCircuit ng LatchCircuit Gate Shut- Circuitdown<br>1 3<br>MOS1 S MOS2 S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Ta = 25°C) 

||||(Ta = 25°C)|
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to source voltage|VDSS|–60|V|
|Gate to sourcevoltage|VGSS|–16|V|
|Gate to source voltage|VGSS|2.5|V|
|Drain current|ID<br>Note5|–1.5|A|
|Body-draindiodereverse draincurrent|IDR|–1.5|A|
|Avalanche current|IAP<br>Note 4|–1.5|A|
|Avalanche energy|EAR<br>Note 4|9.6|mJ|
|Channeldissipation|Pch<br>Note 2|2|W|
|Channel dissipation|Pch<br>Note 3|1.5|W|
|Channel temperature|Tch|150|C|
|Storage temperature|Tstg|–55 to +150|C|



Notes: 1. Value at Tc = 25C 

2. 1 Drive operation : When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 

3. 2 Drive operation : When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 

4. Tch = 25C, Rg  50  

5. It provides by the current limitation lower bound value. 

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**RJE0607JSP** 

**Preliminary** 

## **Typical Operation Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Input voltage|VIH|–3.5|—|—|V||
||VIL|—|—|–1.2|V||
|Input current<br>(Gate non shut down)|IIH1|—|—|–100|A|Vi = –8 V, VDS= 0|
||IIH2|—|—|–50|A|Vi = –3.5 V, VDS= 0|
||IIL|—|—|–10|A|Vi = –1.2 V, VDS= 0|
|Input current<br>(Gate shut down)|IIH(sd)1|—|–0.8|—|mA|Vi = –8 V, VDS= 0|
||IIH(sd)2|—|–0.35|—|mA|Vi = –3.5 V, VDS= 0|
|Shut down temperature|Tsd|—|175|—|C|Channel temperature<br>(dv/dt VGS 500 V/ms)|
|Gate operation voltage|Vop|–3.5|—|–12|V||
|Drain current<br>(Current limitation value)|ID limt|–1.5|—|—|A|VGS= –12 V, VDS= –10 VNote 4|



Notes; 6. Pulse test 

## **Electrical Characteristics** 

(Ta = 25°C) 

|||||||(Ta = 25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Drain current|ID1|—|—|–2|A|VGS= –3.5 V, VDS= –10 V|
||ID2|—|—|–10|mA|VGS= –1.2 V, VDS= –10 V|
||ID3|–1.5|—|—|A|VGS= –12 V, VDS= –10 VNote 7|
|Drain to source breakdown<br>voltage|V(BR)DSS|–60|—|—|V|ID= –10 mA, VGS= 0|
|Gate to source breakdown<br>voltage|V(BR)GSS|–16|—|—|V|IG= –800A, VDS= 0|
||V(BR)GSS|2.5|—|—|V|IG= 100A, VDS= 0|
|Gate to source leak current|IGSS1|—|—|–100|A|VGS= –8 V, VDS= 0|
||IGSS2|—|—|–50|A|VGS= –3.5 V, VDS= 0|
||IGSS3|—|—|–10|A|VGS= –1.2 V, VDS= 0|
||IGSS4|—|—|100|A|VGS= 2.4 V, VDS= 0|
|Input current (shut down)|IGS(OP)1|—|–0.8|—|mA|VGS= –8 V, VDS= 0|
||IGS(OP)2|—|–0.35|—|mA|VGS= –3.5 V, VDS= 0|
|Zero gate voltage drain current|IDSS1|—|—|–10|A|VDS= –60 V, VGS= 0|
||IDSS2|—|—|–10|A|VDS= –48 V, VGS= 0<br>Ta = 125C|
|Gate to source cutoff voltage|VGS(off)|–2.2|—|–3.4|V|VDS= –10 V, ID= –1 mA|
|Static drain to source on state<br>resistance|RDS(on)|—|185|380|m|ID= –0.75 A, VGS= –6 VNote 7|
||RDS(on)|—|140|260|m|ID= –0.75 A, VGS= –10 VNote 7|
|Output capacitance|Coss|—|194|—|pF|VDS= –10 V, VGS= 0, f =<br>1MHz|
|Turn-on delaytime|td(on)|—|1.82|—|s|VGS= –10 V, ID= –0.75 A,<br>RL= 40|
|Rise time|tr|—|1.95|—|s||
|Turn-off delaytime|td(off)|—|0.99|—|s||
|Fall time|tf|—|0.84|—|s||
|Body-drain diode forward voltage|VDF|—|0.83|—|V|IF= –1.5 A, VGS= 0|
|Body-drain diode reverse<br>recoverytime|trr|—|85|—|ns|IF= –1.5 A, VGS= 0<br>diF/dt = 50 A/s|
|Over load shut down<br>operation timeNote 8|tos1|—|18.6|—|ms|VGS= –5 V, VDD= –16 V|



Notes: 7. Pulse test 

8. Including the junction temperature rise of the over loaded condition. 

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**RJE0607JSP** 

**Preliminary** 

## **Main Characteristics** 

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Power vs. Temperature Derating<br>4.0<br>Test condition.<br>When using the glass epoxy board.<br>3.0 (FR4  40 x 40 x 1.6 mm), (PW  ≤  10s)<br>2.0<br>1.0<br>0<br>0 50 100 150 200<br>Case Temperature   Tc  ( ° C)<br>Typical Output Characteristics<br>− 1.5 − 4.5 V Pulse Test<br>− 5 V<br>− 6 V<br>− 8 V − 4 V<br>− 1.0 − 10 V<br>− 0.5<br>− 3.5 V<br>VGS = 0 V<br>0 − 2 − 4 − 6 − 8 − 10<br>Drain to Source Voltage   VDS  (V)<br>Drain Source Saturation Voltage vs.<br>Gate to Source Voltage<br>− 1000<br>Pulse Test<br>− 800<br>− 600<br>− 400<br>− 200 − 1 A<br>0 ID =  − 0.5 A<br>− 2 − 4 − 6 − 8 − 10<br>Gate to Source Voltage   VGS  (V)<br>2 Driver Operation<br>1 Driver Operation<br>Channel Dissipation   Pch  (W)<br>  (A)<br>D<br>Drain Current   I<br>  (mV)<br>DS(on)<br>Drain to Source Saturation Voltage<br>                                    V<br>**----- End of picture text -----**<br>


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Maximum Safe Operation Area<br>− 10 Ta = 25 ° C Thermal shut down o peration area<br>1 shot Pulse<br>1 Driver Operation<br>− 1<br>− 0.1<br>Operation<br>in this area<br>is limited RDS(on)<br>− 0.01<br>− 0.01 − 0.1 − 1 − 10 − 100<br>Drain to Source Voltage   VDS  (V)<br>Note 6:<br>When using the glass epoxy board.<br>(FR4  40 x 40 x 1.6 mm)<br>Typical Transfer Characteristics<br>− 2.0<br>V DS =  − 10 V<br>Pulse Test<br>− 1.5<br>− 1.0 Tc = 75 ° C<br>25 ° C<br>− 0.5<br>− 40 ° C<br>0<br>0 − 2 − 4 − 6 − 8 − 10<br>Gate to Source Voltage   VGS  (V)<br>Static Drain to Source On State Resistance<br>vs. Drain Current<br>1000<br>Pulse Test<br>V GS = − 6 V<br>100 − 10 V<br>10<br>− 0.1 − 1 − 10<br>Drain Current   ID  (A)<br>1 ms<br>DC Operation PW< 10s<br>Note9<br>  (A)<br>D<br>Drain Current   I<br>  (A)<br>D<br>Drain Current   I<br>) Ω<br>  (m<br>DS(on)<br>Static Drain to Source On State Resistance                                                  R<br>**----- End of picture text -----**<br>


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**RJE0607JSP** 

**Preliminary** 

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Static Drain to Source On State Resistance<br>vs. Temperature<br>500<br>Pulse Test<br>400<br>ID =  − 1 A<br>− 0.2 A,  − 0.5 A<br>300<br>VGS =  − 6 V<br>200<br>100 I D =  − 0.2 A,  − 0.5 A,  − 1 A<br>− 10 V<br>0<br>− 50 − 25 0 25 50 75 100 125 150<br>Case Temperature   Tc  ( ° C)<br>Switching Characteristics<br>10<br>tr<br>td(on)<br>1 td(off)<br>tf<br>VGS =  − 10 V, VDD =  − 30 V<br>PW = 300  μ s, duty  ≤  1 %<br>0.1<br>− 0.1 − 1 − 10<br>Drain Current   ID  (A)<br>Reverse Drain Current vs.<br>Source to Drain Voltage<br>–2.0<br>Pulse Test<br>–10 V<br>–1.5<br>–5 V<br>–1.0<br>V GS  = 0 V<br>–0.5<br>0 –0.4 –0.8 –1.2 –1.6 –2.0<br>Source to Drain Voltage   VSD  (V)<br>) Ω<br>  (m<br>DS(on)<br>Static Drain to Source On State Resistance                                                R<br>s)<br>μ<br>Switching Time   t  (<br>  (A)<br>DR<br>Reverse Drain Current   I<br>**----- End of picture text -----**<br>


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Body-Drain Diode Reverse<br>Recovery Time<br>1000<br>100<br>di / dt = 50 A / μ s<br>VGS = 0, Ta = 25 ° C<br>10<br>− 0.1 − 1 − 10<br>Reverse Drain Current   IDR  (A)<br>Typical Capacitance vs.<br>Drain to Source Voltage<br>1000<br>VGS = 0<br>f = 1 MHz<br>Coss<br>100<br>10<br>− 0 − 10 − 20 − 30 − 40 − 50 − 60<br>Drain to Source Voltage   VDS  (V)<br>Reverse Recovery Time   trr  (ns)<br>Capacitance   C  (pF)<br>**----- End of picture text -----**<br>


Gate to Source Voltage vs. Shutdown Time of Load-Short Test 

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− 16<br>− 14<br>− 12<br>VDD =  − 16 V<br>− 10<br>− 8<br>− 6<br>− 4<br>− 2<br>0<br>1 10 100<br>Shutdown Time of Load-Short Test   Pw  (ms)<br>  (V)<br>GS<br>Gate to Source Voltage   V<br>**----- End of picture text -----**<br>


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**RJE0607JSP** 

**Preliminary** 

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Shutdown Case Temperature vs.<br>Gate to Source Voltage<br>200<br>180<br>160<br>140<br>120 ID =  − 0.2 A<br>dv/dt<br>VGS ≥  500 V/ms<br>100<br>0 − 2 − 4 − 6 − 8 − 10<br>Gate to Source Voltage   VGS  (V)<br>C)<br>°<br>Shutdown Case Temperature   Tc  (<br>**----- End of picture text -----**<br>


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Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)<br>10<br>D = 1<br>1<br>0.5<br>0.1<br>θ ch-f(t) =  γ s (t)  •  θ ch - f<br>0.01 θ ch-f = 125 ° C/W, Ta = 25 ° C<br>When using the glass epoxy board<br>(FR4  40 x 40 x 1.6 mm)<br>0.001 PDM D = [PW] T<br>PW<br>T<br>0.0001<br>10  μ 100  μ 1 m 10 m 100 m 1 10 100 1000 10000<br>Pulse Width   PW  (S)<br>Normalized Transient Thermal Impedance vs. Pulse Width<br>(Operatioon of 2 devices; allowable value per device)<br>10<br>D = 1<br>1<br>0.5<br>0.1<br>θ ch-f(t) =  γ s (t)  •  θ ch - f<br>0.01 θ ch-f = 166 ° C/W, Ta = 25 ° C<br>When using the glass epoxy board<br>(FR4  40 x 40 x 1.6 mm)<br>0.001 PDM D = [PW] T<br>PW<br>T<br>0.0001<br>10  μ 100  μ 1 m 10 m 100 m 1 10 100 1000 10000<br>Pulse Width   PW  (S)<br>0.1<br>0.1<br>0.2<br>0.2<br>0.02<br>0.02<br>0.05<br>0.05<br>0.01<br>0.01<br>1shot pulse<br>1shot pulse<br>s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>s  (t)<br>γ<br>Normalized Transient Thermal Impedance<br>**----- End of picture text -----**<br>


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**RJE0607JSP** 

**Preliminary** 

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Switching Time Test Circuit Waveform<br>Vin Monitor Vout Vin<br>Monitor<br>10%<br>D.U.T.<br>RL<br>90%<br>Vin 50  Ω VDD 90% 90%<br>–10 V = –30 V<br>Vout 10% 10%<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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**RJE0607JSP** 

**Preliminary** 

## **Package Dimensions** 

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Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]<br>SOP-8 P-SOP8-3.95  ×  4.9-1.27 PRSP0008DD-D FP-8DAV 0.085g<br>* [1] D<br>8 5 bp<br>Index mark<br>1 4 Terminal cross section NOTE)1. DIMENSIONS "*1(Nom)" AND "*2"<br>Z DO NOT INCLUDE MOLD FLASH.<br>* [3] bp x M (Ni/Pd/Au plating) 2. DIMENSION "*3" DOES NOTINCLUDE TRIM OFFSET.<br>e<br>Reference Dimension in Millimeters<br>Symbol Min Nom Max<br>L1 DE 4.3.9095 5.3<br>A2<br>A1 0.10 0.14 0.25<br>A 1.75<br>bp 0.34 0.40 0.46<br>b1<br>c 0.15 0.20 0.25<br>L c1<br>0° 8°<br>y HE 5.80 6.10 6.20<br>Detail F e 1.27<br>x 0.25<br>y 0.1<br>Z 0.75<br>L 0.40 0.60 1.27<br>L1 1.08<br>F<br>E E<br>2* H c<br>A<br>A1<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part No.**|**Quantity**|**Shipping Container**|
|---|---|---|
|RJE0607JSP-00-J0|2500pcs/reel|Taping|



R07DS0123EJ0200  Rev.2.00 Sep 01, 2010 

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## Notice 

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