RHRP15120-F102

_**RHRP15120**_ 

_**November 2013**_ 

## _**Data Sheet**_ 

## _**15 A, 1200 V, Hyperfast Diode**_ 

## _**Features**_ 

- Hyperfast Recovery trr = 75 ns (@ IF = 15 A) 

The RHRP15120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. 

- Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) 

- 1200 V Reverse Voltage and High Reliability 

- Avalanche Energy Rated 

- RoHS Compliant 

## _**Applications**_ 

- Switching Power Supplies 

- Power Switching Circuits 

- General Purpose 

## _**Ordering Information**_ 

**PART NUMBER PACKAGE BRAND** RHRP15120 TO-220AC -2L RHR15120 ~~f+~~ NOTE: When ordering, use the entire part number. 

## _**Symbol**_ 

## **K** 

## _**Packaging**_ 

## **JEDEC TO-220AC** 

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ANODE<br>CATHODE<br>CATHODE<br>(FLANGE)<br>&<br>**----- End of picture text -----**<br>


## **A** 

**Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified 

|**Absolute Maximum Ratings**<br>TC = 25C = 25= 25[o]C, Unless Otherwise Specified|||
|---|---|---|
||**RHRP15120**|**UNIT**|
|Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM|1200|V|
|Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM|1200|V|
|DC Blocking Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR|1200|V|
|Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)<br>(TC= 140oC)|15|A|
|Repetitive Peak Surge Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM|30|A|
|(Square Wave, 20 kHz)|||
|Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM|200|A|
|(Halfwave, 1 Phase, 60 Hz)|||
|Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|100|W|
|Avalanche Energy (See Figures 10 and 11)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL|20|mJ|
|Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ|-65 to 175|oC|



©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 

Publication Order Number: RHRP15120/D 

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_**RHRP15120**_ 

## **Electrical Specifications** TC = 25[o] C, Unless Otherwise Specified 

|**Electrical Specifcat**|**ions**<br>TC= 25oC, Unless Otherwise Specifed|||||
|---|---|---|---|---|---|
|**SYMBOL**|**TEST CONDITION**|**MIN**|**TYP**|**MAX**|**UNIT**|
|VF|IF= 15 A|-|-|3.2|V|
||IF= 15 A, TC= 150oC|-|-|2.6|V|
|IR|VR= 1200 V|-|-|100|µA|
||VR= 1200 V, TC= 150oC|-|-|500|µA|
|Trr|IF= 1 A, dIF/dt = 100 A/µs|-|-|65|ns|
||IF= 15 A, dIF/dt = 100 A/µs|-|-|75|ns|
|ta|IF= 15 A, dIF/dt = 100 A/µs|-|36|-|ns|
|tb|IF= 15 A, dIF/dt = 100 A/µs|-|28|-|ns|
|Qrr|IF= 15 A, dIF/dt = 100 A/µs|-|150|-|nC|
|CJ|VR= 10 V, IF= 0 A|-|55|-|pF|
|RθJC||-|-|1.5|oC/W|



DEFINITIONS 

VF = Instantaneous forward voltage (pw = 300 µs, D = 2%). 

IR = Instantaneous reverse current. 

t rr = Reverse recovery time (See Figure 9), summation of ta + tb. 

ta = Time to reach peak reverse current (See Figure 9). 

tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). 

Q rr = Reverse recovery charge. 

CJ = Junction capacitance. 

RθJC = Thermal resistance junction to case. pw = pulse width. 

D = duty cycle. 

## _**Typical Performance Curves**_ 

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100<br>175 [o] C 100 [o] C 25 [o] C<br>10<br>1<br>0.5<br>0 1 2 3 4 5<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


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1000<br>175 [o] C<br>100<br>100 [o] C<br>10<br>1<br>0.1  25 [o] C<br>0.01<br>0 200 400 600 800 1000 1200<br>VR, REVERSE VOLTAGE (V)<br>A)<br>µ<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE** 

**FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE** 

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_**RHRP15120**_ 

## _**Typical Performance Curves**_ **(Continued)** 

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75<br>TC = 25 [o] C, dIF/dt = 100A/ µ s<br>60<br>trr<br>45<br>30 ta<br>15 tb<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


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150<br>TC = 100 [o] C, dIF/dt = 100A/ µ s<br>125<br>100<br>trr<br>75<br>ta<br>50<br>tb<br>25<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


**FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT** 

**FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT** 

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200<br>TC = 175 [o] C, dIF/dt = 100A/ µ s<br>150<br>trr<br>100<br>ta<br>50 tb<br>0<br>0.5 1 5 10 15<br>IF, FORWARD CURRENT (A)<br>t, RECOVERY TIMES (ns)<br>**----- End of picture text -----**<br>


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15<br>DC<br>12<br>SQ. WAVE<br>9<br>6<br>3<br>0<br>100 115 130 145 160 175<br>TC, CASE TEMPERATURE ( [o] C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT** 

**FIGURE 6. CURRENT DERATING CURVE** 

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175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 50 100 150 200<br>VR, REVERSE VOLTAGE (V)<br>, JUNCTION CAPACITANCE (pF)<br>J<br>C<br>**----- End of picture text -----**<br>


**FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE** 

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**3** 

_**RHRP15120**_ 

## _**Test Circuits and Waveforms**_ 

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VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF<br>DUT CURRENT<br>RG SENSE<br>+<br>VGE t1 IGBT - VDD<br>t2<br>**----- End of picture text -----**<br>


**FIGURE 8. trr TEST CIRCUIT** 

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IMAX = 1A<br>L = 40mH<br>R < 0.1 Ω<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R<br>CURRENT +<br>SENSE VDD<br>Q1<br>VDD<br>DUT -<br>**----- End of picture text -----**<br>


**FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT** 

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IF dIdtF ta trr tb<br>0<br>0.25 IRM<br>IRM<br>**----- End of picture text -----**<br>


**FIGURE 9. trr WAVEFORMS AND DEFINITIONS** 

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VAVL<br>IL IL<br>I V<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS** 

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**4** 

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