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RGW80TS65EHRC11
IGBT, 80 A, 1.5 V, 214 W, 650 V, TO-247N, 3 Pins
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- Manufacturer: ROHM
- Product type: Single IGBTs
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: Field Stop Trench Series
- Power Dissipation: 214W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247N
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.92 € |
| Current stock | 25+ |
| Lead time | 7 days |
Datasheet
**650V 40A Field Stop Trench IGBT**
Datasheet
## RGW80TS65EHR
## l **Outline**
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1) AEC-Q101 Qualified
2) Low Collector - Emitter Saturation Voltage 3) Low Switching Loss & Soft Switching 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant
## l **Application**
Automotive
On & Off Board Chargers
DC-DC Converters
PFC
Industrial Inverter
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TO-247N<br>t ( {<br>(1) (2)(3)<br>ae<br>**----- End of picture text -----**<br>
## l **Inner Circuit**
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(2)<br>(1) Gate<br>*1 (2) Collector<br>(3) Emitter<br>(1)<br>*1 Built in FRD<br>(3)<br>**----- End of picture text -----**<br>
## l **Packaging Specifications**
|Type|Packaging|Tube|
|---|---|---|
||Reel Size (mm)|-|
||Tape Width (mm)|-|
||Basic Ordering Unit (pcs)|450|
||Packing Code|C11|
||Marking|RGW80TS65E|
## l **Absolute Maximum Ratings** (at TC = 25°C unless otherwise specified)
|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|l**Absolute Maximum Ratingsgss**(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)|(at TC = 25°C unless otherwise specified)C = 25°C unless otherwise specified)= 25°C unless otherwise specified)pecified)ecified)|||
|---|---|---|---|---|
|Parameter||Symbol|Value|Unit|
|Collector - Emitter Voltage||VCES|650|V|
|Gate - Emitter Voltage||VGES|±30|V|
|Collector Current|TC= 25°C|IC|80|A|
||TC= 100°C|IC|48|A|
|Pulsed Collector Current||ICP<br>*1|160|A|
|Diode Forward Current|TC= 25°C|IF|73|A|
||TC= 100°C|IF|43|A|
|Diode Pulsed Forward Current||IFP<br>*1|160|A|
|Power Dissipation|TC= 25°C|PD|214|W|
||TC= 100°C|PD|107|W|
|Operating Junction Temperature||Tj|-40 to +175|°C|
|Storage Temperature||Tstg|-55 to +175|°C|
*1 Pulse width limited by Tjmax.
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**2021.12 - Rev.B**
1/12
Datasheet
**RGW80TS65EHR**
## l **Thermal Resistance**
|l**Thermal Resistance**||||||
|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|
|||Min.|Typ.|Max.||
|Thermal Resistance IGBT Junction - Case|Rθ(j-c)|-|-|0.70|C/W|
|Thermal Resistance Diode Junction - Case|Rθ(j-c)|-|-|0.93|C/W|
## l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified)
|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Collector - Emitter Breakdown<br>Voltage|BVCES|IC= 10μA, VGE= 0V|650|-|-|V|
|Collector Cut - off Current|ICES|VCE= 650V, VGE= 0V|-|-|10|μA|
|Gate - Emitter Leakage<br>Current|IGES|VGE= ±30V, VCE= 0V|-|-|±200|nA|
|Gate - Emitter Threshold<br>Voltage|VGE(th)|VCE= 5V, IC= 26.0mA|5.0|6.0|7.0|V|
|Collector - Emitter Saturation<br>Voltage|VCE(sat)|Tj= 175°C<br>IC= 40A, VGE= 15V,<br>Tj= 25°C|-<br>-|1.85<br>1.5|1.9<br>-|V|
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**2021.12 - Rev.B**
2/12
Datasheet
**RGW80TS65EHR**
l **IGBT Electrical Characteristics** (at Tj = 25°C unless otherwise specified)
|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Input Capacitance|Cies|VGE= 0V,<br>f = 1MHz<br>VCE= 30V,|-|3320|-|pF|
|Output Capacitance|Coes||-|83|-||
|Reverse transfer Capacitance|Cres||-|60|-||
|Total Gate Charge|Qg|VCE= 400V,<br>IC= 40A,<br>VGE= 15V|-|110|-|nC|
|Gate - Emitter Charge|Qge||-|23|-||
|Gate - Collector Charge|Qgc||-|41|-||
|Turn - on Delay Time|td(on)|IC= 20A, VCC= 400V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 25°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|43|-|ns|
|Rise Time|tr||-|11|-||
|Turn - off Delay Time|td(off)||-|148|-||
|Fall Time|tf||-|37|-||
|Turn - on Switching Loss|Eon||-|0.34|-|mJ|
|Turn - off Switching Loss|Eoff||-|0.33|-||
|Turn - on Delay Time|td(on)|IC= 20A, VCC= 400V,<br>VGE= 15V, RG= 10Ω,<br>Tj= 175°C<br>Inductive Load<br>*Eoninclude diode<br>reverse recovery|-|39|-|ns|
|Rise Time|tr||-|12|-||
|Turn - off Delay Time|td(off)||-|179|-||
|Fall Time|tf||-|75|-||
|Turn - on Switching Loss|Eon||-|0.36|-|mJ|
|Turn - off Switching Loss|Eoff||-|0.51|-||
|Reverse Bias Safe Operating<br>Area|RBSOA|IC= 160A, VCC= 520V,<br>VP= 650V, VGE= 15V,<br>RG= 100Ω, Tj= 175℃|FULL SQUARE|||-|
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**2021.12 - Rev.B**
3/12
Datasheet
**RGW80TS65EHR**
## l **FRD Electrical Characteristics** (at Tj = 25°C unless otherwise specified)
|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Diode Forward Voltage|VF|Tj= 25°C<br>Tj= 175°C<br>IF= 40A,|-<br>-|1.45<br>1.55|1.9<br>-|V|
|Diode Reverse Recovery<br>Time|trr|IF= 20A,<br>VCC= 400V,|-|86|-|ns|
|Diode Peak Reverse<br>Recovery Current|Irr||-|7.2|-|A|
|Diode Reverse Recovery<br>Charge|Qrr|diF/dt = 200A/μs,<br>Tj= 25°C|-|0.33|-|μC|
|Diode Reverse Recovery<br>Energy|Err||-|10.0|-|μJ|
|Diode Reverse Recovery<br>Time|trr|IF= 20A,<br>VCC= 400V,|-|147|-|ns|
|Diode Peak Reverse<br>Recovery Current|Irr||-|9.7|-|A|
|Diode Reverse Recovery<br>Charge|Qrr|diF/dt = 200A/μs,<br>Tj= 175°C|-|0.83|-|μC|
|Diode Reverse Recovery<br>Energy|Err||-|36.3|-|μJ|
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**2021.12 - Rev.B**
4/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
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Fig.1 Power Dissipation<br> vs. Case Temperature<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [W]<br>D<br>Power Dissipation : P<br>**----- End of picture text -----**<br>
Fig.3 Forward Bias Safe Operating Area
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1000<br>1μs<br>100<br>10μs<br>10 100μs<br>1<br>0.1<br>TC = 25ºC<br>Single Pulse<br>0.01<br>1 10 100 1000<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>
Fig.2 Collector Current
vs. Case Temperature
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90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10 Tj ≤ 175ºC<br>VGE ≥ 15V<br>0<br>0 25 50 75 100 125 150 175<br>Case Temperature : TC [°C ]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>
Fig.4 Reverse Bias Safe Operating Area
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200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20 Tj ≤ 175ºC<br>VGE = 15V<br>0<br>0 200 400 600 800<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
5/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
## Fig.5 Typical Output Characteristics
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160<br>Tｊ = 25ºC<br>140 VGE = 20V<br>120 VGE = 15V<br>100 VGE = 12V VGE = 10V<br>80<br>60<br>VGE = 8V<br>40<br>20<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>
Fig.6 Typical Output Characteristics
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160<br>Tｊ = 175ºC<br>140<br>VGE = 20V<br>120<br>VGE = 15V<br>100<br>VGE = 12V<br>80 VGE = 10V<br>60<br>VGE = 8V<br>40<br>20<br>0<br>0 1 2 3 4 5<br>Collector To Emitter Voltage : VCE [V]<br> [A]<br>C<br>Collector Current : I<br>**----- End of picture text -----**<br>
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature
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80 4<br>VCE = 10V VGE = 15V<br>70<br>60 3<br>50 IC = 80A<br>40 2 IC = 40A<br>30<br>20 1 IC = 20A<br>Tj = 175ºC<br>10<br>Tj = 25ºC<br>0 0<br>0 2 4 6 8 10 12 25 50 75 100 125 150 175<br>Gate To Emitter Voltage : VGE [V] Junction Temperature : Tj [°C ]<br> [A]<br>C<br> [V]<br>CE(sat)<br>Voltage : V<br>Collector Current : I<br>Collector To Emitter Saturation<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
6/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage
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20 20<br>Tj = 25ºC Tj = 175ºC<br>15 IC = 80A 15 IC = 80A<br>IC = 40A<br>IC = 40A<br>IC = 20A<br>10 10 IC = 20A<br>5 5<br>0 0<br>5 10 15 20 5 10 15 20<br>Gate To Emitter Voltage : VGE [V] Gate To Emitter Voltage : VGE [V]<br> [V] [V]<br>CE(sat) CE(sat)<br>Voltage : V Voltage : V<br>Collector To Emitter Saturation Collector To Emitter Saturation<br>**----- End of picture text -----**<br>
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Fig.11 Typical Capacitance<br>Fig.12 Typical Gate Charge<br> vs. Collector to Emitter Voltage<br>10000 15<br>Cies<br>1000<br>10<br>100 Coes<br>5<br>10 Cres<br>f = 1MHz VCC = 400V<br>VGE = 0V IC = 40A<br>T = 25ºC T = 25ºC<br>j j<br>1 0<br>0.01 0.1 1 10 100 0 40 80 120<br>Collector To Emitter Voltage : VCE [V] Gate Charge : Qg [nC]<br> [V]<br>GE<br>Capacitance [pF]<br>Gate To Emitter Voltage : V<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
7/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
Fig.13 Typical Switching Time vs. Collector Current
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1000<br>t<br>d(off)<br>100<br>tf<br>t<br>d(on)<br>10<br>tr<br>VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 25ºC<br>Inductive load<br>1<br>0 10 20 30 40 50 60 70 80<br>Collecter Current : IC [A]<br>Switching Time [ns]<br>**----- End of picture text -----**<br>
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Fig.15 Typical Switching Energy Losses<br> vs. Collector Current<br>10<br>Eon<br>1<br>Eoff<br>0.1<br>VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 25ºC<br>Inductive load<br>0.01<br>0 10 20 30 40 50 60 70 80<br>Collecter Current : IC [A]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>
Fig.14 Typical Switching Time vs. Gate Resistance
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1000<br>t<br>d(off)<br>100<br>t<br>d(on)<br>tf<br>10 tr<br>VCC = 400V, VGE = 15V,<br>IC = 20A, Tj = 25ºC<br>Inductive load<br>1<br>0 10 20 30 40 50<br>Gate Resistance : Rg [Ω]<br>Switching Time [ns]<br>**----- End of picture text -----**<br>
Fig.16 Typical Switching Energy Losses vs. Gate Resistance
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10<br>1<br>Eoff<br>Eon<br>0.1<br>VCC = 400V, VGE = 15V,<br>IC = 20A, Tj = 25ºC<br>Inductive load<br>0.01<br>0 10 20 30 40 50<br>Gate Resistance : RG [Ω]<br>Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
8/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
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Fig.17 Typical Switching Time<br> vs. Collector Current<br>**----- End of picture text -----**<br>
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1000<br>t<br>d(off)<br>100 tf<br>t<br>d(on)<br>10<br>tr<br>VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC<br>Inductive load<br>1<br>0 10 20 30 40 50 60 70 80<br>Collecter Current : IC [A]<br>Switching Time [ns]<br>**----- End of picture text -----**<br>
Fig.18 Typical Switching Time vs. Gate Resistance
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1000<br>t<br>d(off)<br>100<br>tf<br>t<br>d(on)<br>10 tr<br>VCC = 400V, VGE = 15V,<br>IC = 20A, Tj = 175ºC<br>Inductive load<br>1<br>0 10 20 30 40 50<br>Gate Resistance : Rg [Ω]<br>Switching Time [ns]<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Fig.19 Typical Switching Energy Losses Fig.20 Typical Switching Energy Losses<br> vs. Collector Current vs. Gate Resistance<br>10 10<br>1 1 Eoff<br>Eoff<br>Eon<br>0.1 0.1<br>Eon<br>VCC = 400V, VGE = 15V, VCC = 400V, VGE = 15V,<br>RG = 10Ω, Tj = 175ºC IC = 20A, Tj = 175ºC<br>Inductive load Inductive load<br>0.01 0.01<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50<br>Collecter Current : IC [A] Gate Resistance : RG [Ω]<br>Switching Energy Losses [mJ] Switching Energy Losses [mJ]<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
9/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
Fig.21 Typical Diode Forward Current vs. Forward Voltage
Fig.22 Typical Diode Revese Recovery Time vs. Forward Current
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**----- Start of picture text -----**<br>
160 400<br>140 diFV/dt = 200A/μsCC = 400VFV/dt = 200A/μsCC = 400VV/dt = 200A/μsCC = 400V/dt = 200A/μsCC = 400VCC = 400V= 400V<br>Inductive load<br>120 300<br>100<br>80 200 Tj = 175ºCj = 175ºC = 175ºC<br>60 Tj = 25ºC<br>40 Tj = 175ºC 100<br>20 Tj = 25ºCj = 25ºC = 25ºC<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80<br>Forward Voltage : VF [V] Forward Current : IF [A]F [A] [A]<br>Fig.23 Typical Diode Reverse Recovery Fig.24 Typical Diode Rrverse Recovery<br> Current vs. Forward Current Charge vs. Forward Current<br>20 2.5<br>VCC = 400V<br>diF/dt = 200A/μs<br>2 Inductive load<br>15<br>Tj = 175ºC 1.5<br>10<br>Tj = 175ºC<br>1<br>5<br>Tj = 25ºC VCC = 400V 0.5<br>diF/dt = 200A/μs Tj = 25ºC<br>Inductive load<br>0 0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80<br>Forward Current : IF [A] Forward Current : IF [A]<br> [ns]<br> [A] rr<br>F<br>Forward Current : I<br>Reverse Recovery Time : t<br> [A] [μC]<br>Reverse Recovery Current : Irr Reverse Recovery Charge : Qrr<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
400<br>diFV/dt = 200A/μsCC = 400VFV/dt = 200A/μsCC = 400VV/dt = 200A/μsCC = 400V/dt = 200A/μsCC = 400VCC = 400V= 400V<br>Inductive load<br>300<br>200<br>Tj = 175ºCj = 175ºC = 175ºC<br>100<br>Tj = 25ºCj = 25ºC = 25ºC<br>0<br>0 10 20 30 40 50 60 70 80<br>Forward Current : IF [A]F [A] [A]<br> [ns]<br>rr<br>Reverse Recovery Time : t<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
10/12
Datasheet
**RGW80TS65EHR**
## l **Electrical Characteristic Curves**
## Fig.25 Typical IGBT Transient Thermal Impedance
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**----- Start of picture text -----**<br>
1<br>0.1 0.2 D = 0.5<br>S e<br>0.1<br>PDM<br>0.01 Single Pulse t1<br>0.01 t2<br>0.02 Duty = t1/t2<br>0.05 Peak Tj = PDM×Zθ(j-c)+TC<br>C1 C2 C3 R1 R2 R3<br>225.2u 644.8u 1.012m 84.37m 51.91m 303.7m<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width : t1 [s]<br>Fig.26 Typical Diode Transient Thermal Impedance<br>1<br>D = 0.5<br>e n<br>0.1 0.2<br>0.1<br>meh Se ait mii al al<br>PDM<br>Single Pulse<br>0.01 0.01 t1<br>0.02 t2<br>Duty = t1/t2<br>0.05 Peak Tj = PDM×Zθ(j-c)+TC<br>C1 C2 C3 R1 R2 R3<br>330.3u 719.9u 1.900m 149.6m 114.2m 316.2m<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Pulse Width : t1 [s]<br> [°C/W]<br>θ(j-c)<br>: Z<br>Transient Thermal Impedance<br> [°C/W]<br>θ(j-c)<br>: Z<br>Transient Thermal Impedance<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
11/12
Datasheet
**RGW80TS65EHR**
## ● **Inductive Load Switching Circuit and Waveform**
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**----- Start of picture text -----**<br>
Gate Drive Time<br>90%<br>D.U.T.<br>D.U.T. VGE<br>10%<br>VG 90%<br>I<br>C<br>Fig.27 Inductive Load Circuit 10%<br>td(on) tr td(off)<br>tf<br>IF trr , Qrr ton toff<br>diF/dt VCE<br>10%<br>Irr<br>V<br>CE(sat)<br>Eon Eoff<br>Fig.29 Diode Reverse Recovery Waveform Fig.28 Inductive Load Waveform<br>**----- End of picture text -----**<br>
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**2021.12 - Rev.B**
12/12
Notice
- **N o t e s**
- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications.
- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
- 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
- 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.
- 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
- 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
- 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
- 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
- 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
- 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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## ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
R1107 S
Datasheet
## **General Precaution**
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.
> **[Notice – WE ]** © 2015 ROHM Co., Ltd. All rights reserved.
**Rev.001**
Updated at March 23, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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