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RGF1K
Standard Recovery Diode, 800 V, 1 A, Single, 1.3 V, 500 ns, 30 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 30A
- Reverse Recovery Time: 500ns
- Average Forward Current: 1A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 7500 |
| Price | 0.093 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~oe~~ ## Fast Rectifiers ## RGF1A - RGF1M ## **Features** - Glass Passivated Junction **SMA CASE 403AE** - For Surface Mounted Applications - Low Forward Voltage Drop - High Current Capability - Easy Pick and Place - High Surge Current Capability - NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant **MARKING DIAGRAM** &Y&Z&3 RGF1x ~~1 |~~ &Y = **onsemi** Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) RGF1x = Specific Device Code x = A/B/D/G/J/K/M ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Top Mark**|**Package**|**Shipping**†| |RGF1A|RGF1A|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1A|||| |RGF1B|RGF1B|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1B|||| |RGF1D|RGF1D|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1D|||| |RGF1G|RGF1G|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1G|||| |RGF1J|RGF1J|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1J|||| |RGF1K|RGF1K|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1K|||| |RGF1M|RGF1M|SMA<br>(Pb−Free)|7500 / Tape & Reel| |NRVRGF1M|||| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **RGF1M/D** **1** Semiconductor Components Industries, LLC, 2020 **July, 2024 − Rev. 3** **RGF1A − RGF1M** ## **SPECIFICATIONS** **ABSOLUTE MAXIMUM RATINGS** (TA = 25C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|| |---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**|||||||**Unit**| |||**RGF1A**|**RGF1B**|**RGF1D**|**RGF1G**|**RGF1J**|**RGF1K**|**RGF1M**|| |VRRM|Maximum Repetitive Reverse Voltage|50|100|200|400|600|800|1000|V| |IF(AV)|Average Rectified Forward Current at<br>TL= 125C|1.0|||||||A| |IFSM|Non−Repetitive Peak Forward Surge<br>Current: 8.3 ms Single Half−Sine Wave|30|||||||A| |TJ|Operating Junction Temperature|−65 to +175|||||||C| |TSTG|Storage Temperature Range|−65 to +175|||||||C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |PD|Power Dissipation|1.76|W| |R JA|Junction−to−Ambient Thermal Resistance (Note 1)|85|C/W| |R JL|Junction−to−Lead Thermal Resistance (Note 1)|28|C/W| 1. Device mounted on FR−4 PCB 0.013 mm. **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TA = 25C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|| |---|---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Value**|||||||**Unit**| ||||**RGF1A**|**RGF1B**|**RGF1D**|**RGF1G**|**RGF1J**|**RGF1K**|**RGF1M**|| |VF|Maximum Forward Voltage|IF= 1.0 A|1.3|||||||V| |trr|Maximum Reverse<br>Recovery Time|IF= 0.5 A,<br>IR= 1.0 A,<br>IRR= 0.25 A|150||||250|500||ns| |IR|Maximum Reverse Current<br>at Rated VR|TA= 25C|5.0|||||||A| |||TA= 125C|100|||||||| |CT|Typical Capacitance|VR= 4.0 V,<br>f = 1.0 MHz|8.5|||||||pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **RGF1A − RGF1M** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [186 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 1.25<br>1<br>0.75<br> RESISTIVE OR<br> INDUCTIVE LOAD<br>0.5 P.C.B. MOUNTED<br>ON 0.2 x 0.2"<br>(5.0 x 5.0 mm)<br>0.25 COPPER PAD AREAS<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature [C]<br> [A]<br>F<br>Average Rectified Forward Current, I<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **==> picture [182 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10<br>T A = 125C<br>1 a 2 a<br>jp | | tt<br>i — T A = 25C<br>0.1<br>AVA<br>Se<br>Pulse Width = 300 s<br>2% Duty Cycle<br>a=<br>0.01 Ane ||<br>0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>Forward Voltage, VF [V]<br> [A]<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br> **Figure 3. Forward Voltage Characteristics** **==> picture [193 x 347] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>40<br>3020 PSNI ie DN | Sl ELT<br>10 a<br>0<br>1 2 5 10 20 50 100<br>Number of Cycles at 60 Hz<br>Figure 2. Non−Repetitive Surge Current<br>30<br>10<br>erat T A = 150C<br>1 PTTT<br>TA = 100C<br>SS<br>0.1<br>ff<br>_——<br>TA = 25C<br>0.01 |———FT |<br>0 20 40 60 80 100 120 140<br>Percent of Rated Peak Reverse Voltage [%]<br> [A]<br>FSM<br>Peak Forward Surge Current, I<br>A]<br> [<br>R<br>Reverse Current, I<br>**----- End of picture text -----**<br> **Figure 4. Reverse Current vs. Reverse Voltage** **==> picture [187 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> 50 a eeee<br>ooh<br>20 a ll<br>10 ——=——=... aes<br>SSS<br>a ee<br>5 eeeee e ee<br>SSeaiiiliesmaiis CoN<br>2<br>1<br>1 2 5 10 20 50 100<br>Reverse Voltage, VR [V]<br> [pF]<br>T<br>Total Capacitance, C<br>**----- End of picture text -----**<br> **Figure 5. Total Capacitance** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMA** CASE 403AE ISSUE O DATE 31 AUG 2016 **==> picture [483 x 527] intentionally omitted <==** **----- Start of picture text -----**<br> 5.60<br>B B 0.13 M C B A<br>4.80<br>2.65<br>2.95 1.65<br>B 1.75<br>2.50 1.20<br>4.30<br>4.75<br>A B<br>4.00<br>LAND PATTERN RECOMMENDATION<br>TOP VIEW<br> 2.50 MAX<br>A<br>2.20<br>NOTES:<br>1.90<br> A. EXCEPT WHERE NOTED, CONFORMS<br> TO JEDEC DO214 VARIATION AC.<br>0.203 0.30 B DOES NOT COMPLY JEDEC STANDARD<br>B 0.050 0.05 VALUE.<br>C C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>2.05 0.13 M C B A D. DIMENSIONS ARE EXCLUSIVE OF<br>1.95 BURRS, MOLD FLASH AND TIE BAR<br> PROTRUSIONS.<br>SIDE VIEW<br> E. DIMENSIONS AND TOLERANCE AS<br> PER ASME Y14.5−2009.<br>8 ° E. LAND PATTERN STD. DIOM5025X231M<br>0 °<br> R0.15 4X<br>GAGE PLANE<br>0.45<br>0.41<br>0.15<br>1.52<br>8 ° 0.75<br>0 °<br>DETAIL A<br>SCALE 20 : 1<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13440G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SMA PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 14, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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