Image not available
Illustrative purposes only
RFP50N06
Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P
- MSL: -
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 131W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.022ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.09 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Is Now Part of**
## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com**
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
_**RFP50N06**_
## _**Data Sheet**_
## _**September 20 13**_
## _**N-Channel Power MOSFET 60V, 50A, 22 mΩ**_
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49018.
## _**Ordering Information**_
|**PART NUMBER**|**PACKAGE**|**BRAND**|
|---|---|---|
|RFP50N06|TO-220AB|RFP50N06|
## _**Features**_
- 50A, 60V
- rDS(ON) = 0.022Ω
- Temperature Compensating PSPICE[®] Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 175[o] C Operating Temperature
## _**Symbol**_
**==> picture [54 x 67] intentionally omitted <==**
**----- Start of picture text -----**<br>
D<br>G<br>S<br>**----- End of picture text -----**<br>
## _**Packaging**_
**==> picture [162 x 65] intentionally omitted <==**
**----- Start of picture text -----**<br>
JEDEC TO-220AB<br>SOURCE<br>DRAIN<br>GATE<br>DRAIN<br>(FLANGE)<br>**----- End of picture text -----**<br>
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
**Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified
||**RFP50N06**|**UNITS**|
|---|---|---|
|Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS|60|V|
|Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR|60|V|
|Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS|±20|V|
|Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID|50|A|
|Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM|(Figure 5)||
|Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS|(Figure 6)||
|Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|131|W|
|Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|0.877|W/oC|
|Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG|-55 to 175|oC|
|Maximum Temperature for Soldering|||
|Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL|300|oC|
|Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg|260|oC|
_CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._
## NOTE:
1. TJ = 25[o] C to 150[o] C.
## **Electrical Specifications** TC = 25[o] C, Unless Otherwise Specified
**PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS** Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 60 - - V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = 60V, TC = 25[o] C - - 1 µA VGS = 0V TC = 150[o] C - - 50 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance rDS(ON) ID = 50A, VGS = 10V (Figures 9) - - 0.022 Ω Turn-On Time tON VDD = 30V, ID = 50A - - 95 ns Turn-On Delay Time td(ON) RRLGS = 0.6 = 3.6Ω, VΩ GS = 10V - 12 - ns Rise Time tr (Figure 13) - 55 - ns Turn-Off Delay Time td(OFF) - 37 - ns Fall Time tf - 13 - ns Turn-Off Time tOFF - - 75 ns = Total Gate Charge Qg(TOT) VGS = 0 to 20V VDD = 48V, ID = 50A, = - 125 150 nC Gate Charge at 10V Qg(10) VGS = 0 to 10V RIg(REF)L = 0.96 = 1.45mAΩ - 67 80 nC —— Threshold Gate Charge Qg(TH) VGS = 0 to 2V (Figure 13) - 3.7 4.5 nC Input Capacitance CISS VDS = 25V, VGS = 0V - 2020 - pF f = 1MHz Output Capacitance COSS (Figure 12) - 600 - pF Reverse Transfer Capacitance CRSS - 200 - pF Thermal Resistance Junction to Case RθJC (Figure 3) - - 1.14 oC/W = se Thermal Resistance Junction to Ambient RθJA TO- 220 - - 62 oC/W - - - - - eeee peers ree pee coer eee **Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS** Source to Drain Diode Voltage VSD ISD = 50A - - 1.5 V Reverse Recovery Time trr ISD = 50A, dISD/dt = 100A/µs - - 125 ns ~~a~~
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## _**Typical Performance Curves**_ Unless Otherwise Specified
**==> picture [236 x 164] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.2<br>1.0<br>0.8<br>PIN | ft<br>0.6<br>pt INr Et<br>0.4<br>pt | | wot<br>0.2 Se eeeNe.<br>0<br>0 pit} 25 50 75 100 tin 125 150 175<br>TC, CASE TEMPERATURE ( [o] C)<br>POWER DISSIPATION MULTIPLIER<br>**----- End of picture text -----**<br>
**==> picture [236 x 164] intentionally omitted <==**
**----- Start of picture text -----**<br>
60<br>50<br>40<br>TN<br>30<br>| {|Pt~<br>20<br>pf | |IN—<br>10 rN<br>0<br>25 50 75 100 125 150 175<br>pf | ft | tl<br>TC, CASE TEMPERATURE ( [o] C)<br>DRAIN CURRENT (A)<br>ID,<br>**----- End of picture text -----**<br>
**==> picture [215 x 17] intentionally omitted <==**
**----- Start of picture text -----**<br>
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE<br>TEMPERATURE<br>**----- End of picture text -----**<br>
**FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE**
**==> picture [511 x 375] intentionally omitted <==**
**----- Start of picture text -----**<br>
2<br>1<br>a<br>0.5<br>er<br>0.2<br>EA | RR<br>0.1 0.1 PDM<br>0.05 esosso eo e ee MO NIN eee t1<br>0.02 EE t2<br>0.01 NOTES:<br>Pee tt DUTY FACTOR: D = t1/t2<br>SINGLE PULSE PEAK TJ = PDM x Z θ JC x R θ JC + TC<br>0.01 LL EEE PTT<br>10 ee [-5] 10 [-4] CI 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t1, RECTANGULAR PULSE DURATION (s)<br>FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE<br>400 TJ = MAX RATED 10 [3] FOR TEMPERATURES ABOVE 25 [o] C<br>aad SINGLE PULSE Sa !<br>TC = 25 [o] C DERATE PEAK CURRENTCAPABILITY AS FOLLOWS:<br>100 Ec LANCHTIE T I<br>Se eee 100 µ s ro VGS = 20V I = I25 -----------------------175150 – TC <br>Tt ee e mB ie |<br>aan Nee eT 1ms ee<br>VGS = 10V<br>10 pase Tt JUTTING, |<br>OPERATION IN THIS TC = 25 [o] C<br>e AREA MAY BE ——_~ e as 10ms ee 10 [2] lgCLINI TIIN, TITI N aya<br>LIMITED BY rDS(ON) Sw 100ms = TRANSCONDUCTANCEMAY LIMIT CURRENT HESSSH<br>VDSS(MAX) = 60V DC IN THIS REGION<br>1 e e $K—N 40 5a HHCA retCE<br>1 10 100 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (ms)<br>, NORMALIZED<br>JC<br>θ<br>Z<br>THERMAL IMPEDANCE<br>PEAK CURRENT (A)<br>,<br>, DRAIN CURRENT (A)<br>ID IDM<br>**----- End of picture text -----**<br>
**FIGURE 4. FORWARD BIAS SAFE OPERATING AREA**
**FIGURE 5. PEAK CURRENT CAPABILITY**
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)**
**==> picture [234 x 166] intentionally omitted <==**
**----- Start of picture text -----**<br>
300<br>100<br>STARTING TJ = 25 [o] C<br>10 STARTING TJ = 150 [o] C<br>If R = 0<br>tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)<br>If R ≠ 0<br>tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]<br>1 Se<br>0.01 0.1 1 10<br>tAV, TIME IN AVALANCHE (ms)<br>AVALANCHE CURRENT (A)<br>IAS,<br>**----- End of picture text -----**<br>
**==> picture [235 x 164] intentionally omitted <==**
**----- Start of picture text -----**<br>
125<br>PULSE DURATION = 80 µ s<br>VGS = 10V DUTY CYCLE = 0.5% MAX<br>TC = 25 [o] C<br>100 VGS = 8V<br>VGS = 7V<br>75<br>50<br>VGS = 6V<br>25 VGS = 5V<br>VGS = 4V<br>0 an e<br>0 1.5 3.0 4.5 6.0 7.5<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>DRAIN CURRENT (A)<br>ID,<br>**----- End of picture text -----**<br>
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
**FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY**
**FIGURE 7. SATURATION CHARACTERISTICS**
**==> picture [236 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
125<br>PULSE DURATION = 80 µ s -55 [o] C 25 [o] C<br>DUTY CYCLE = 0.5% MAX<br>VDD = 15V<br>100<br>175 [o] C<br>75<br>LEEL A<br>50<br>ERRRED Zann<br>25<br>LET LAT<br>0 TILA<br>0 1 2 3 4 5 li 6 7 i 8 9 10<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>FIGURE 8. TRANSFER CHARACTERISTICS<br>2.0<br>VGS = VDS, ID = 250 µ A<br>1.5<br>1.0<br>0.5<br>0<br>-80 -40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br>, DRAIN CURRENT (A)<br>ID<br>NORMALIZED GATE<br>THRESHOLD VOLTAGE<br>**----- End of picture text -----**<br>
**==> picture [236 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.5<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>VGS = 10V, ID = 50A<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>-80 -40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br>FIGURE 9. NORMALIZED DRAIN TO SOURCE ON<br>RESISTANCE vs JUNCTION TEMPERATURE<br>2.0<br>ID = 250 µ A<br>1.5<br>1.0<br>0.5<br>0<br>-80 -40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br>ON RESISTANCE<br>NORMALIZED DRAIN TO SOURCE<br>BREAKDOWN VOLTAGE<br>NORMALIZED DRAIN TO SOURCE<br>**----- End of picture text -----**<br>
**FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE**
**FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE**
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)**
**==> picture [510 x 166] intentionally omitted <==**
**----- Start of picture text -----**<br>
4000 60 10<br>VGS = 0V, f = 1MHz<br>CCISS RSS = C= CGSGD + CGD VDD = BVDSS VDD = BVDSS<br>3000 CL COSS = CDS + CGD 45 le Aaa 7.5<br>CISS<br>2000 30 5.0<br>0.75 BVDSS 0.75 BVDSS<br>0.50 BVDSS 0.50 BVDSS<br>1000 _ COSS 15 \\ 0.25 BVDSS 0.25 BVDSS IN 2.5<br>RL = 1.2 Ω<br>CRSS Ig(REF) = 1.45mA<br>VGS = 10V<br>0 NS E EE 0 NN 0<br>0 5 10 15 20 25 Ig(REF) Ig(REF)<br>20 t, TIME ( µ s) 80<br>VDS, DRAIN TO SOURCE VOLTAGE (V) Ig(ACT) Ig(ACT)<br>C, CAPACITANCE (pF)<br>DRAIN TO SOURCE VOLTAGE (V)VDS, GATE TO SOURCE VOLTAGE (V)VGS,<br>**----- End of picture text -----**<br>
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
**FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE**
**FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT**
## _**Test Circuits and Waveforms**_
**==> picture [494 x 143] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>BVDSS<br>L tP<br>VDS<br>REQUIRED PEAK IVARY tP TO OBTAINAS RG +VDD IAS VDD<br>VGS -<br>DUT<br>tP<br>0V IAS 0<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>
**FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT**
**FIGURE 15. UNCLAMPED ENERGY WAVEFORMS**
**==> picture [219 x 119] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>VGS RL<br>+<br>VDD<br>-<br>DUT<br>RGS<br>VGS<br>**----- End of picture text -----**<br>
**==> picture [220 x 145] intentionally omitted <==**
**----- Start of picture text -----**<br>
tON tOFF<br>td(ON) td(OFF)<br>tr tf<br>VDS<br>90% 90%<br>10% 10%<br>0<br>90%<br>VGS 50% 50%<br>PULSE WIDTH<br>10%<br>0<br>**----- End of picture text -----**<br>
**FIGURE 16. SWITCHING TIME TEST CIRCUIT**
**FIGURE 17. SWITCHING WAVEFORMS**
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## _**Test Circuits and Waveforms**_ **(Continued)**
**==> picture [196 x 112] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>RL<br>VGS +<br>VDD<br>-<br>DUT<br>Ig(REF)<br>**----- End of picture text -----**<br>
**FIGURE 18. GATE CHARGE TEST CIRCUIT**
**==> picture [238 x 149] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDD Qg(TOT)<br>__ ——_<br>VDS<br>VGS = 20V<br>Qg(10)<br>VGS VGS = 10V<br>VGS = 2V<br>0<br>Qg(TH)<br>Ig(REF)<br>0 _<br>**----- End of picture text -----**<br>
**FIGURE 19. GATE CHARGE WAVEFORMS**
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## _**PSPICE Electrical Model**_
.SUBCKT RFP50N06 2 1 3
REV 2/22/93
*NOM TEMP = 25[o] C
CA 12 8 3.68e-9 CB 15 14 3.625e-9 CIN 6 8 1.98e-9
**==> picture [498 x 209] intentionally omitted <==**
**----- Start of picture text -----**<br>
5 DRAIN<br>DBODY 7 5 DBDMOD 10 2<br>DBREAK 5 11DBKMOD - DPLCAP RDRAIN LDRAIN<br>DPLCAP 10 5 DPLCAPMOD 6 DBREAK<br>ESG<br>8 16<br>+ VTO<br>EBREAK 11 7 17 18 64.59 - DBODY<br>MOS2<br>EDS 14 8 5 8 1EGS 13 8 6 8 1 GATE1 9 20 EVTO18 - 6 MOS121 11 +<br>ESG 6 10 6 8 1 LGATE RGATE 8 EBREAK 17<br>18<br>EVTO 20 6 18 8 1 RIN CIN -<br>RSOURCE LSOURCE<br>IT 8 17 1 _ia 8 y 7 3<br>S1A S2A SOURCE<br>LDRAIN 2 5 1e-9 12 13 14 15 17 RBREAK 18<br>LGATE 1 9 5.65e-9 8 13<br>LSOURCE 3 7 4.13e-9<br>S1B S2B RVTO<br>13<br>MOS1 16 6 8 8 MOSMOD M=0.99 CA CB IT 19<br>MOS2 16 21 8 8 MOSMOD M=0.01 + + 14 -<br>EGS 6 EDS 5 VBAT<br>- 8 - 8 +<br>+<br>+<br>**----- End of picture text -----**<br>
RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1e-4 RGATE 9 20 0.690 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 12e-3 RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1 VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8) .MODEL DBKMOD D (RS=1.98e-1 TRS1=2.35E-4 TRS2=-3.83e-6) .MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-7) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5) .MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult **A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options;** authors, William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
_**RFP50N06**_
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
**==> picture [434 x 196] intentionally omitted <==**
**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|AccuPower™|F-PFS™|Sync-Lock™|
|AX-CAP|[®]|*|FRFET|[®]|tm|[®]|®*|
|BitSiC™|Global Power Resource|[SM]|PowerTrench|[®]|
|E|GENERALSYSTEM|
|Build it Now™|GreenBridge™|PowerXS™|
|CorePLUS™|Green FPS™|Programmable Active Droop™|TinyBoost|[®]|
|CorePOWER™|Green FPS™ e-Series™|QFET|[®]|TinyBuck|[®]|
|CROSSVOLT|™|G|max|™|QS™|TinyCalc™|
|CTL™|GTO™|Quiet Series™|TinyLogic|[®]|
|TINYOPTO™|
|Current Transfer Logic™|IntelliMAX™|RapidConfigure™|
|DEUXPEED|[®]|ISOPLANAR™|™|TinyPower™|
|Dual Cool™|Marking Small Speakers Sound Louder|TinyPWM™|
|EcoSPARK|[®]|and Better™|Saving our world, 1mW/W/kW at a time™|TinyWire™TranSiC™|
|EfficentMax™|MegaBuck™|SignalWise™|TriFault Detect™|
|ESBC™|MICROCOUPLER™|SmartMax™|TRUECURRENT|[®]|*|
|®|MicroFET™MicroPak™|SMART START™Solutions for Your Success™|SerDes™|
|Fairchild|[®]|MicroPak2™|SPM|[®]|
|Fairchild Semiconductor|[®]|MillerDrive™|STEALTH™|WZ...|
|FACT Quiet Series™|MotionMax™|SuperFET|[®]|UHC|[®]|
|FACT|[®]|mWSaver|[®]|SuperSOT™-3|Ultra FRFET™|
|FAST|[®]|OptoHiT™|SuperSOT™-6|UniFET™|
|FastvCore™|OPTOLOGIC|[®]|SuperSOT™-8|VCX™|
|FETBench™|OPTOPLANAR|[®]|SupreMOS|[®]|VisualMax™|
|FPS™|SyncFET™|VoltagePlus™|
|XS™|
**----- End of picture text -----**<br>
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
## **DISCLAIMER**
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **LIFE SUPPORT POLICY**
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user.
## **ANTI-COUNTERFEITING POLICY**
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
## **Definition of Terms**
**==> picture [459 x 97] intentionally omitted <==**
**----- Start of picture text -----**<br>
||||
|---|---|---|
|Datasheet Identification|Product Status|Definition|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications|
|may change in any manner without notice.|
|Datasheet contains preliminary data; supplementary data will be published at a later|
|Preliminary|First Production|date. Fairchild Semiconductor reserves the right to make changes at any time without|
|notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to|
|make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild|
|Semiconductor. The datasheet is for reference information only.|
**----- End of picture text -----**<br>
Rev. I66
©2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada
## **LITERATURE FULFILLMENT** :
Literature Distribution Center for ON Semiconductor
**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050
© Semiconductor Components Industries, LLC
www.onsemi.com
**www.onsemi.com**
**1**
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →