RF5L15120CB4

RF FET Transistor, RF FET Transistor, LDMOS, 95 V, 120 W, 1.5 GHz, LBB, 95 V, 120 W, 1.5 GHz, LBB

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Manufacturer: STMICROELECTRONICS
Product type: RF FETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 5Pins
Channel Type: -
Product Range: -
Power Dissipation: 120W
Transistor Mounting: Surface Mount
Transistor Case Style: LBB
Operating Frequency Max: 1.5GHz
Operating Frequency Min: -
Drain Source Voltage Vds: 95V
Operating Temperature Max: 200°C
Continuous Drain Current Id: -

Delivery and price
Units per pack	10
Price	129.77 €
Current stock	10+
Lead time	30 days

Datasheet

**RF5L15120CB4** 

Datasheet 

## 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz 

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## **Features** 

|**Order code**|**Frequency**|**VDD**|**POUT**|**Gain**|**Efficiency**|
|---|---|---|---|---|---|
|RF5L15120CB4|1000 MHz|50 V|120 W|20 dB|60%|
|•<br>High efficiency and linear gain operations||||||



- Integrated ESD protection 

- Large positive and negative gate/source voltage range 

- Excellent thermal stability, low HCI drift 

- In compliance with the european directive 2002/95/EC 

|**Pin connection**|**Pin connection**|
|---|---|
|**Pin**|**Connection**|
|1|Drain A|
|2|Drain B|
|3|Source (bottom side)|
|4|Gate B|
|5|Gate A|



## **Applications** 

- Broadband commercial communications 

- TV broadcast 

- • Avioncs 

- Industrial 

## **Description** 

The RF5L15120CB4 is a 120 W LDMOS FET, designed for broadband commercial communications, TV Broadcast, Avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats. 

## **Product status link** 

RF5L15120CB4 

## **Product summary** 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|RF5L15120CB4|
|**Marking**|RF5L15120CB4|
|**Package**|LBB|
|**Packing**|Tape and reel 13"|
|**Base/bulk quantity**|100/100|



**DS13384** - **Rev 1** - **June 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**RF5L15120CB4 Electrical data** 

## **1 Electrical data** 

## **1.1 Absolute ratings** 

## **Table 1. Absolute maximum ratings (TCASE= 25 °C)** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|V(BR)DSS|Drain-source voltage|95|V|
|VGS|Gate-source voltage|-8/+10|V|
|VDD|Maximum operating voltage|55|V|
|TJ|Maximum junction temperature|+200|°C|
|TSTG|Storage temperature range|-65 to +150|°C|



## **1.2 Thermal data** 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Junction-case thermal resistance|0.7|°C/W|



_Note: TCASE = +85 °C , TJ = +200 °C, DC test._ 

## **1.3 ESD protection characteristics** 

## **Table 3. ESD protection** 

|**Symbol**|**Test methodology**|**Class**|
|---|---|---|
|HBM|Human body model (per JESD22-A114)|2|



**DS13384** - **Rev 1** 

**page 2/11** 

**RF5L15120CB4 Electrical characteristics** 

## **2 Electrical characteristics** 

## **2.1 Static** 

**Table 4. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, IDS= 0.5 mA|95|||V|
|IDSS|Zero gate voltage drain leakage<br>current|VGS= 0 V, VDS= 90 V|||1|μA|
|||VGS= 0 V, VDS= 50 V|||||
|IGSS|Gate-source leakage current|VGS= 10 V, VDS= 0 V|||100|nA|
|||VGS= -8 V, VDS= 0 V|||||
|VGS(th)|Gate threshold voltage|VDS= 50 V, IDS= 600 µA|2||2.8|V|
|VGS(Q)|Gate quiescent voltage|VDS= 50 V, IDS= 400 mA|2||6|V|
|VDS(on)|Static drain-source on-voltage|VGS= 10 V, IDS= 2 A|||1.2|V|
|IDS(on)|Static drain-source on-current|VGS= 10 V, VDS= 100 mV|||2.5|A|
|RDS(on)|Drain-source on-state resistance|VGS= 10 V, VDS= 100 mV|||1|Ω|
|CISS|Common source input capacitance|VGS= 0 V, VDD= 50 V,<br>f = 1 MHz||56||pF|
|CRSS|Common source feedback<br>capacitance|||0.6||pF|
|COSS|Common source output<br>capacitance|||23||pF|



## **2.2 Dynamic** 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|f|Frequency||||1500|MHz|
|POUT|Output power|f = 1000 MHz, at 1dB compression<br>point, pulsed CW||120||W|
|GPS|Power gain|||20||dB|
|ηD|Drain efficiency|||60||%|
|VSWR|Load mismatch|At 120 W pulsed CW output<br>power, all phase angles|||10:1||



_Note:_ 

_VDD = 50 V, IDQ = 100 mA, pulse width = 100 μs, duty cycle = 10%._ 

**DS13384** - **Rev 1** 

**page 3/11** 

**RF5L15120CB4 Typical performances** 

**3** 

## **Typical performances** 

**Figure 1. Power gain and drain efficiency versus output power (f = 1000 MHz, pulsed CW)** 

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22 70<br>21 60<br>20 50<br>19 40<br>18 30<br>17 20<br>16 10<br>15 0<br>36 38 40 42 44 46 48 50 52 54<br>POUT (dBm)<br>GPS ƞD GADG160620201639SA<br>(%)<br>Gain (dB)<br>Efficiency<br>**----- End of picture text -----**<br>


_Note: VDD = 50 V, IDQ =100 mA, pulsed CW; pulse width = 100 μs, duty cycle = 10%._ 

**Figure 2. Power gain and drain efficiency versus output power (f = 1000 MHz, CW)** 

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22 70<br>21 60<br>20 50<br>19 40<br>18 30<br>17 20<br>16 10<br>15 0<br>36 38 40 42 44 46 48 50 52 54<br>POUT (dBm)<br>GPS ƞD GADG160620201644SA<br>Gain (dB) (%)<br>Efficiency<br>**----- End of picture text -----**<br>


_Note: VDD= 50 V, IDQ= 100 mA._ 

**DS13384** - **Rev 1** 

**page 4/11** 

**RF5L15120CB4 Test circuit** 

## **4 Test circuit** 

## **4.1 Test circuit layout** 

**Figure 3. Test circuit layout (f = 1000 MHz)** 

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**Figure 4. Test circuit photo (f = 1000 MHz)** 

**DS13384** - **Rev 1** 

**page 5/11** 

**RF5L15120CB4 Test circuit layout** 

**Table 6. Components list** 

|**Component**|**Description**|**Suggested manufacturer**|
|---|---|---|
|C1, C2, C3, C13, C14, C15, C17, C18, C21, C22,<br>C26, C27|120 pF|ATC800B|
|C5|6.8 pF|ATC800B|
|C6|5.6 pF|ATC800B|
|C7|10 pF|ATC800B|
|C12|3.3 pF|ATC800B|
|C8, C9, C10, C28|8.2 pF|ATC800B|
|C16, C19, C20, C23|Ceramic multilayer capacitor, 10 μF, 100 V|10 μF/100 V|
|R1, R2|Metal film resistor, 200 Ω||
|R4, R5|Chip resistor, 13 Ω, 1206||
|L1, L2|Copper wire, cross section diameter 0.8 mm||
|C24, C25|Electrolytic capacitor, 470 μF, 63 V||
|PCB|0.762 mm [0.030"] thick, Ɛr= 3.48, Rogers RO4350B, 1 oz. copper||



**DS13384** - **Rev 1** 

**page 6/11** 

**RF5L15120CB4 Package information** 

## **5 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **5.1 LBB package information** 

## **Figure 5. LBB package outline** 

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A<br>B<br>C<br>N Ex4<br>M<br>G<br>S<br>L I H<br>F<br>R1 x 2<br>CH2 x 45° D<br>R2 x 4<br>CH1 x 45°<br>T<br>S R<br>P<br>Q<br>DM00666717_2<br>**----- End of picture text -----**<br>


**DS13384** - **Rev 1** 

**page 7/11** 

**RF5L15120CB4 LBB package information** 

## **Table 7. LBB mechanical data** 

|**Sbl**|**Millimeters**|**Millimeters**|**Millimeters**|
|---|---|---|---|
|**ymo**|**Min.**|**Typ.**|**Max.**|
|A|28.82|28.95|29.08|
|B|22.73|22.86|22.99|
|C|16.87|17.00|17.13|
|E|5.32|5.45|5.58|
|F|1.01|1.14|1.27|
|H|5.72|5.85|5.98|
|I|5.72|5.85|5.98|
|L|17.65|17.78|17.91|
|M|1.02|1.15|1.28|
|N||0.10||
|P|4.72|4.85|4.98|
|Q|16.38|16.51|16.64|
|R|1.37|1.50|1.63|
|S|1.97|2.10|2.23|
|T||6.60||
|CH1||2.72||
|CH2||1.02||
|R1||1.65||
|R2||0.50||



**DS13384** - **Rev 1** 

**page 8/11** 

**RF5L15120CB4** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|16-Jun-2020|1|First release|



**DS13384** - **Rev 1** 

**page 9/11** 

**RF5L15120CB4 Contents** 

## **Contents** 

|**1**|**Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
||**1.1**|Absolute ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
||**1.2**|Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
||**1.3**|ESD protection characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Static. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
||**2.2**|Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**3**|**Typical performances. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4**||
|**4**|**Test**|**circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5**|
||**4.1**|Test circuit layout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**5**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**||
||**5.1**|LBB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|



**DS13384** - **Rev 1** 

**page 10/11** 

**RF5L15120CB4** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS13384** - **Rev 1** 

**page 11/11**

Updated at March 21, 2026

STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.

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