RF101L2STE25
Fast / Ultrafast Diode, 200 V, 1 A, Single, 870 mV, 25 ns, 20 A
- Manufacturer: ROHM
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:870mV; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 2 Pin
- Product Range: RF101
- Qualification: -
- Diode Case Style: SOD-106
- Diode Configuration: Single
- Forward Voltage Max: 870mV
- Forward Surge Current: 20A
- Reverse Recovery Time: 25ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.379 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Data Sheet fine. ## Fast Recovery Diode ## **RF101L2S** **==> picture [473 x 486] intentionally omitted <==** **----- Start of picture text -----**<br> Applications Dimensions (Unit : mm) Land size figure (Unit : mm)<br>General rectification<br>2.6±0.2 = 2.0<br> Features a<br>1)Small power mold type. (PMDS)<br>2)Ultra low VF<br>3)Ultra high switching speed 6 6<br>4)Low switching loss ① ② 0.1±0.02 0.1<br>PMDS<br>2.0±0.2<br> Construction mri 1.5±0.2 L i<br>Silicon epitaxial Structure<br>ROHM : PMDS<br>JEDEC : SOD-106<br>① ② Manufacture date<br> Taping dimensions (Unit : mm)<br>2.0±0.05<br>4.0±0.1 φ1.55±0.05 0.3<br>Ate fe Be Be<br>- TS φ1.55 IF<br>2.9±0.1 4.0±0.1 =<br>2.8MAX<br> Absolute maximum ratings (Ta=25°C)<br>Parameter Symbol Limits Unit<br>Reverse voltage (repetitive) VRM 200 V<br>Reverse voltage (DC) VR 200 V<br>Average rectified forward current (*1) Io 1 A<br>Forward current surge peak (60Hz・1cyc) IFSM 20 A<br>Junction temperature Tj 150 °C<br>Storage temperature Tstg 55 to 150 °C<br>2.0<br>4.2<br>1.2±0.3<br>4.5±0.2<br>5.0±0.3<br>1.75±0.1<br>5.5±0.05<br>12±0.2<br>9.5±0.1<br>5.3±0.1 0.05<br>**----- End of picture text -----**<br> (*1)Mounted on epoxy board. 180°Half sine wave ## **Electrical characteristics** (Ta=25°C) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VF|-|0.815|0.87|V|IF=1.0A| |Reverse current|IR|-|0.01|10|μA|VR=200V| |Reverse recoverytime|trr|-|12|25|ns|IF=0.5A,IR=1A,Irr=0.25*IR| www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 **2011.05 - Rev.B** Data Sheet **RF101L2S** **==> picture [483 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> 1 10000 Ta=150℃ Ta=125℃ 100<br>f=1MHzf=1MHz<br>Ta=150℃ 1000<br>Ta=75℃<br>0.1 100<br>Ta=125℃ Ta=25℃<br>10 10<br>Ta=75℃ Ta=-25℃<br>0.01 Ta=25℃ 1<br>Ta=-25℃ 0.1<br>0.001 0.01 1<br>0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>850 100 100<br>Ta=25℃ 90 Ta=25℃ 90 Ta=25℃<br>IF=1A VR=200V f=1MHz<br>840 80 n=30pcs 80 VR=0V<br>n=30pcs 70 70 n=10pcs<br>830 60 60<br>50 50<br>820 40 40<br>30 AVE:11.1nA 30<br>810 AVE:818.6mV 20 20 AVE:37.0pF<br>10 10<br>800 0 0<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>200 30 1000<br>Ta=25℃<br>Ifsm 1cyc 25 IF=0.5A Ifsm<br>150 IR=1A<br>Irr=0.25*IR 8.3ms 8.3ms<br>8.3ms 20 n=10pcs 100 1cyc<br>100 15<br>10 AVE:12.2ns 10<br>50<br>AVE:63.0A 5<br>0 0 1<br>trr DISPERSION MAP 1 10 100<br>IFSM DISRESION MAP<br>NUMBER OF CYCLES<br>Mounted on epoxy board IFSM-CYCLE CHARACTERISTICS<br>1000 1000 IM=10mA IF=100mA 2<br>Ifsm t 1m time Rth(j-a)<br>100 300u 1.5 DC<br>100 D=1/2<br>10 Rth(j-c) 1 Sin(θ＝180)<br>10<br>1 0.5<br>1 0.1 0<br>1 10 100 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2<br>TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED<br>IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENT：Io(A)<br>Io-Pf CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>REVERSE RECOVERY TIME:trr(ns)<br>PEAK SURGE TRANSIENT<br>FORWARD POWER DISSIPATION:Pf(W)<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 **2011.05 - Rev.B** Data Sheet **RF101L2S** **==> picture [474 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 3 3 30<br>2 DC 00V A t t T T DT D=t/T VR=100V =t/ j=150℃ VVRIo 2 0A0V00 t tTT Tj=150℃ D VR=100V =t/TVR Io 2520 No break at 30kV<br>DC<br>15<br>D=1/2 D=1/2<br>1 1 10<br>Sin(θ＝180) AVE:13.6kV<br>Sin(θ＝180)<br>5<br>0 0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150 C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>ESD DISPERSION MAP<br>AVERAGE RECTIFIEd AVERAGE RECTIFIED ELECTROSTATIC<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A) DISCHARGE TEST ESD(KV)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 **2011.05 - Rev.B** Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at June 4, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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