RF071M2STR
Fast / Ultrafast Diode, 200 V, 700 mA, Single, 850 mV, 25 ns, 15 A
- Manufacturer: ROHM
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):700mA; Diode Configuration:Single; Forward Voltage VF Max:850mV; Reverse Recovery Time trr Max:25ns; Forward Surge Current
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 2 Pin
- Product Range: RF071
- Qualification: -
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 850mV
- Forward Surge Current: 15A
- Reverse Recovery Time: 25ns
- Average Forward Current: 700mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.103 € |
| Current stock | 10+ |
| Lead time | 30 days |
Data Sheet == ## Fast Recovery Diode ## **RF071M2S** **Applications** General rectification ## **Features** 1)Small power mold type.(PMDU) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss **Construction** Silicon epitaxial planer **==> picture [270 x 345] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions (Unit : mm) Land size figure (Unit : mm)<br>0.1±0.1<br>1.6±0.1 0.05 1.2<br>[ |<br>PMDU<br>=| ; 1<br>0.9±0.1 Structure<br>kK =|| Le!<br>ROHM : PMDU 0.8±0.1<br>JEDEC :SOD-123<br>Manufacture Date<br> Taping dimensions (Unit : mm)<br>PT 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1<br>1.81±0.1 Jy 4.0±0.1 φ1.0±0.1 Te<br>1.5MAX<br>0.85<br>3.05<br>① 2.6±0.1 3.5±0.2<br>1.75±0.1<br>3.5±0.05 8.0±0.2<br>3.71±0.1<br>**----- End of picture text -----**<br> ## **Taping dimensions** (Unit : mm) ## **Absolute maximum ratings** (Ta=25°C) |Parameter|Symbol<br>~~—————~~|Limits<br>~~—————~~|Unit| |---|---|---|---| |Reverse voltage(repetitive)|VRM<br>~~—————~~|200<br>~~—————~~|V| |Reverse voltage(DC)|VR<br>~~—————~~<br>~~———~~|200<br>~~—————~~<br>~~———~~|V| |Forward current（DC）|IF<br>~~—————~~<br>~~———~~|1<br>~~—————~~<br>~~———~~|A| |Average rectified forward current(*1)|Io<br>~~—|—_—~~|0.7<br>~~—|—_—~~|A| |Forward current surgepeak(60Hz・1cyc)|IFSM<br>~~—|—_—~~|15<br>~~—|—_—~~|A| |Junction temperature|Tj<br>~~|~~|150<br>~~|~~|°C| |Storage temperature|Tstg<br>~~|~~|55 to150<br>~~|~~|°C| (*1)Mounted on epoxy board. 180°Half sine wave ## **Electrical characteristics** (Ta=25°C) |**Electrical characteristics**(Ta=25°C)Ta=25°C))||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Forward voltage|VF|-|0.79|0.85|V|IF=0.7A| |Reverse current|IR|-|0.01|10|μA|VR=200V| |Reverse recoverytime|trr|-|12|25|ns|IF=0.5A,IR=1A,Irr=0.25*IR| www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 **2011.05 - Rev.E** Data Sheet **RF071M2S** **==> picture [485 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> 1 10000 Ta=150℃ Ta=125℃ 100<br>f=1MHzf=1MHz<br>Ta=150℃ 1000<br>Ta=75℃<br>0.1 100<br>Ta=125℃ Ta=25℃<br>10 10<br>Ta=75℃ Ta=-25℃<br>0.01 Ta=25℃ 1<br>0.1<br>Ta=-25℃<br>0.001 0.01 1<br>0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 0 5 10 15 20 25 30<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>820 100 100<br>Ta=25℃ 90 Ta=25℃ 90 Ta=25℃<br>810 n=30pcsIF=0.7A 8070 VR=200Vn=30pcs 8070 nf=1MHz VR=0V =10pcs<br>800 60 60<br>50 50<br>790 40 40<br>30 AVE:11.1nA 30<br>780 AVE:795.7mV 20 20 AVE:37.0pF<br>10 10<br>770 0 0<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>200 30 1000<br>Ta=25℃<br>150 Ifsm 1cyc 25 IF=0.5A IR=1A Ifsm<br>Irr=0.25*IR 8.3ms 8.3ms<br>8.3ms 20 n=10pcs 100 1cyc<br>100 15<br>10 AVE:12.2ns 10<br>50<br>AVE:63.0A 5<br>0 0 1<br>trr DISPERSION MAP 1 10 100<br>IFSM DISRESION MAP<br>NUMBER OF CYCLES<br>IFSM-CYCLE CHARACTERISTICS<br>Mounted on epoxy board<br>1000 1000 IM=10mA IF=0.5A 1<br>Ifsm Rth(j-a)<br>t<br>100 1ms time 0.8 DC<br>100 300us D=1/2<br>0.6 Sin(θ＝180)<br>10 Rth(j-c)<br>0.4<br>10<br>1<br>0.2<br>1 0.1 0<br>1 10 100 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5<br>IFSM-t CHARACTERISTICSTIME:t(ms) Rth-t CHARACTERISTICSTIME:t(s) FORWARD CURRENT：Io(A)AVERAGE RECTIFIED<br>Io-Pf CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>REVERSE RECOVERY TIME:trr(ns)<br>PEAK SURGE TRANSIENT<br>FORWARD POWER DISSIPATION:Pf(W)<br>FORWARD CURRENT:IFSM(A)<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 **2011.05 - Rev.E** Data Sheet **RF071M2S** **==> picture [468 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 3 3 30<br>0 A Io Io 0 A Io Io No break at 30kV<br>2 0V Tt T Tj=150℃D=t/TVR=100VRV 2 0 0 0V tt T T VR=100V TjTj D=t/TVR=100 ==150℃150℃ VR V 2520<br>15<br>DC DC<br>1 D=1/2 1 D=1/2 10 AVE:13.6kV<br>Sin(θ＝180) Sin(θ＝180) 5<br>0 0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150 C=200pF C=100pF<br>R=0Ω R=1.5kΩ<br>AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)<br>Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc)<br>ESD DISPERSION MAP<br>AVERAGE RECTIFIED AVERAGE RECTIFIED ELECTROSTATIC DISCHARGE TEST ESD(KV)<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 **2011.05 - Rev.E** Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at June 4, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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