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RBA160N04AHPF-4UA01#GB0
Power MOSFET, N Channel, 40 V, 160 A, 1250 µohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: RENESAS
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 160A
- Drain Source On State Resistance: 1250µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 800 |
| Price | 1.5 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**RBA160N04AHPF-4UA01** ## Data Sheet ## **RBA160N04AHPF-4UA01** 40V – 160A – N-channel Power MOS FET R07DS1344EJ0200 Rev.2.00 Jul. 8, 2020 A lication : Automotive pp ## **Description** The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications. ## **Features** - Super low on-state resistance - RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A ) - Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V ) - Designed for automotive application and AEC-Q101 qualified - Pb-free (This product does not contain Pb in the external electrode) ## **Ordering Information** |**Ordering Information**||| |---|---|---| |**Part No.**|**Quantity**|**Shipping container**| |RBA160N04AHPF-4UA01#GB0|800pcs/reel|Taping| ## **Outline** **==> picture [471 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>1. Gate<br>2. Drain<br>uUUUUU G1 2 3 4 5 6 7 D S S S S S 3, 4, 5, 6, 7. Source 8. Drain (Fin) Source<br>TO-263-7pin-SHL* (MP-25ZU) Equivalent circuit<br>* Short Head & Lead<br> Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide<br>and ultimately degrade the device operation. Steps must be taken to stop generation of<br>static electricity as much as possible, and quickly dissipate it once, when it has occurred.<br>**----- End of picture text -----**<br> R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 1 of 7 **RBA160N04AHPF-4UA01** ## **Absolute Maximum Ratings** (TA=25°C) ||||(TA=25°C)| |---|---|---|---| |**Item**|**Symbol**|**Ratings **|**Unit**| |Drain to Source Voltage(VGS= 0 V)|VDSS|40|V| |Gate to Source Voltage(VDS= 0 V)|VGSS|±20|V| |Drain Current(DC) (TC= 25 °C)|ID(DC)|±160|A| |Drain Current(pulse) **Note1**|ID(pulse)|±640|A| |Total Power Dissipation(TC= 25 °C)|PT1|250|W| |Total Power Dissipation(TA= 25 °C)|PT2|1.8|W| |Channel Temperature|Tch|175|°C| |Storage Temperature|Tstg|-55 to 175|°C| |Repetitive Avalanche Current**Note2**|IAR|55|A| |Repetitive Avalanche Energy **Note3**|EAR|303|mJ| |Note 1. PW 10s, Duty Cycle1%<br>2. VGS= 20→0V,RG= 25<br>3. L = 100H , VDD= 20V , VGS= 20→0V,RG= 25<br>**Thermal Resistance**<br>Channel to Case Thermal Resistance<br>Rth(ch-C)<br>Channel to Ambient Thermal Resistance<br>Rth(ch-A)||0.60<br>°C/W<br>83.3<br>°C/W|| ## **Electrical Characteristics** ( TA=25°C ) |**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**| |---|---|---|---|---|---|---| |Zero Gate Voltage Drain Current|IDSS|||1|A|VDS= 40 V, VGS= 0 V| |Gate Leakage Current|IGSS|||±100|nA|VGS=20 V, VDS= 0 V| |Gate to Source Threshold Voltage|VGS(th)|2.0|3.0|4.0|V|VDS= VGS, ID= 250A| |Drain to Source On-state Resistance|RDS(on) Note4||1.05|1.25|m|VGS= 10 V, ID= 80 A| |Input Capacitance|Ciss Note5||8800|13200|pF|VDS= 25 V<br>VGS= 0 V<br>f = 1 MHz| |Output Capacitance|Coss Note5||980|1470|pF|| |Reverse Transfer Capacitance|Crss Note5||530|960|pF|| |Turn-on DelayTime|td(on) Note5||32|64|ns|VDD= 20 V, ID= 80 A<br>VGS= 10 V<br>RG= 0| |Rise Time|tr Note5||22|53|ns|| |Turn-off DelayTime|td(off) Note5||97|194|ns|| |Fall Time|tf Note5||22|53|ns|| |Total Gate Charge|QG Note5||157|236|nC|VDD = 32 V<br>VGS= 10 V<br>ID= 160 A| |Gate to Source Charge|QGSNote5||37||nC|| |Gate to Drain Charge|QGDNote5||40||nC|| |BodyDiode Forward Voltage|VF(S-D)Note4||0.9|1.5|V|IF= 160 A, VGS= 0 V| |Reverse RecoveryTime|trrNote5||71||ns|IF= 160 A, VGS= 0 V<br>di/dt = 100 A/s| |Reverse RecoveryCharge|QrrNote5||92||nC|| Note 4. Pulse test Note 5. Refer value R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 2 of 7 **RBA160N04AHPF-4UA01** ## **Test Circuit** R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 3 of 7 **RBA160N04AHPF-4UA01** ## **Typical Characteristics (TA = 25°C)** DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA **==> picture [208 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - ℃<br>Percentage of Rated Power - %<br>dT -<br>**----- End of picture text -----**<br> TOTAL POWER DISSIPATION vs. CASE TEMPERATURE **==> picture [208 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - ℃<br>W<br>Total Power Dissipation -<br>PT -<br>**----- End of picture text -----**<br> FORWARD BIAS SAFE OPERATING AREA **==> picture [209 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 ID(pulse) = 640A<br>RDS(on) Limited<br>(VGS=10V)<br>100 ID(DC)=160A<br>10 Power Dissipation Limited<br>Secondary Breakdown Limited<br>1<br>TC=25℃<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br>A<br>- Drain Current -<br>ID<br>**----- End of picture text -----**<br> TRANSIENT THREMAL RESISTANCE vs. PULSE WIDTH **==> picture [435 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Rth(ch-A) = 83.3℃/W<br>100<br>10<br>Rth(ch-C) = 0.60℃/W<br>1<br>0.1<br>Single pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>PW - Pulse Width - s<br>Transient Thermal Resistance - ℃/W<br> -<br>th(t)<br>R<br>**----- End of picture text -----**<br> R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 4 of 7 **RBA160N04AHPF-4UA01** DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE **==> picture [209 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>600<br>500<br>400<br>300<br>200<br>100 VGS=10V<br>Pulsed<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VDS - Drain to Source Voltage - V<br>A<br>Drain Current -<br>-<br>ID<br>**----- End of picture text -----**<br> GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE **==> picture [215 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>VDS = VGS<br>ID=250μA<br>0<br>-50 0 50 100 150 200<br>Tch - Channel Temperature - ℃<br>V<br>Gate to Source Threshold Voltage -<br>-<br>GS(th)<br>V<br>**----- End of picture text -----**<br> DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE **==> picture [215 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>1.5<br>1<br>0.5<br>ID=80A<br>Pulsed<br>0<br>0 5 10 15 20<br>VGS-GATE to Source Voltage-V<br>mΩ<br>Drain to Source On-State Resistance -<br>-<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## FORWARD TRANSFER CHARACTERISTICS **==> picture [205 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>TA=175℃<br>10 25℃<br>-40℃<br>1<br>0.1<br>0.01 VDS=10V<br>Pulsed<br>0.001<br>0 1 2 3 4 5<br>VGS - Gate to Source Voltage - V<br>A<br>Drain Current -<br>-<br>ID<br>**----- End of picture text -----**<br> DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT **==> picture [215 x 438] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>1.5<br>1<br>0.5<br>VGS=10V<br>Pulsed<br>0<br>1 10 100 1000<br>ID - Drain Current - A<br>DRAIN TO SOURCE ON-STATE RESISTANCE vs.<br>CHANNEL TEMPERATURE<br>2.5<br>2<br>1.5<br>1<br>0.5 VGS=10V<br>ID=80A<br>Pulsed<br>0<br>-50 0 50 100 150 200<br>Tch - Channel Temperature - ℃<br>mΩ<br>Drain to Source On-State Resistance -<br>-<br>DS(on)<br>R<br>mΩ<br>Drain to Source On-State Resistance -<br>-<br>DS(on)<br>R<br>**----- End of picture text -----**<br> R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 5 of 7 **RBA160N04AHPF-4UA01** CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE **==> picture [210 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000 Ciss<br>1000 Coss<br>Crss<br>VGS=0V<br>f=1MHz<br>100<br>0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br>pF<br>Capacitance -<br>-<br>rss<br>, C<br>oss<br>, C<br>iss<br>C<br>**----- End of picture text -----**<br> DYNAMIC INPUT/OUTPUT CHARACTERISTICS **==> picture [214 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 50 10<br>VDD = 32V<br>20V<br>40 8<br>8V<br>30 VGS 6<br>20 4<br>10 2<br>VDS ID=160A<br>0 0<br>0 50 100 150 200<br>QG - Gate Charge - nC<br>V<br>V<br>Gate to Drain Voltage -<br>Drain to Source Voltage -<br>-<br>DS<br>V VGS -<br>**----- End of picture text -----**<br> SOURCE TO DRAIN DIODE FORWARD VOLTAGE **==> picture [205 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS=10V VGS=0V<br>100<br>10<br>1<br>Pulsed<br>0.1<br>0.0 0.5 1.0 1.5<br>VF(S-D) - Source to Drain Voltage - V<br>A<br>Diode Forward Current -<br>-<br>IF<br>**----- End of picture text -----**<br> R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 6 of 7 **RBA160N04AHPF-4UA01** ## **Package Dimensions** R07DS1344EJ0200 Rev.2.00 Jul 8, 2020 Page 7 of 7 **==> picture [481 x 409] intentionally omitted <==** **----- Start of picture text -----**<br> Notice<br>1. 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Updated at March 31, 2026
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