RB521G-30T2R

RB521G-30 

Diodes 

## Schottky barrier diode 

## **RB521G-30** 

� **Application** Rectifying small power 

## � **Features** 

1) Ultra small mold type. (VMD2) 

2) Low VF 

3) High reliability 

� **Construction** Silicon epitaxial planer 

## � **External dimensions** (Unit : mm) � **Land size figure** (Unit : mm) 

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0.13±0.03 0.5<br>0.6±0.05<br>VMD2<br>0.27±0.03<br>0.5±0.05 � Structure<br>ROHM : VMD2<br>dot (year week factory)<br>0.5<br>1.2<br>1.0±0.05 1.4±0.05<br>**----- End of picture text -----**<br>


## � **Taping specification** (Unit : mm) 

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0.18±0.05<br>4±0.1 2±0.05 φ1.5+0.1     0<br>φ0.5 0.3<br>0.76±0.1 4±0.1 2±0.05 0.65±0.05<br>1.75±0.1<br>3.5±0.05<br>2.1±0.1 1.11±0.05 0.4 8.0±0.3        0.1<br>**----- End of picture text -----**<br>


## � **Absolute maximum ratings** (Ta=25°C) 

|�**Absolute maximum ratings** (Ta=25°C)||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit<br>V<br>mA<br>mA<br>℃<br>℃|
|Reverse voltage(DC)|VR|30||
|verage rectified forward current<br>A|Io|100||
|ward current surgepeak（60Hz・1cyc）<br>For|IFSM|500||
|ion temperature<br>Junct|Tj|125||
|torage temperature<br>S|Tstg|-40 to +125||



## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(T|a=25°C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|ward voltage<br>For|VF|-|-|0.35|V|IF=10mA|
|Reverse current|IR|-|-|10|µA|VR=10V|



Rev.A 1/3 

RB521G-30 

Diodes 

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� Electrical characteristic curves  (Ta=25°C)<br>1000 10000 100<br>Ta=125℃ f=1MHｚ<br>Ta=125℃<br>100 1000<br>Ta=75℃ Ta=75℃<br>10 100<br>1 Ta=-25℃ 10 Ta=25℃ 10<br>Ta=25℃<br>0.1 1<br>Ta=-25℃<br>0.01 0.1<br>0.001 0.01 1<br>0 100 200 300 400 500 600 0 10 20 30 0 5 10 15 20<br>FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)<br>VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS<br>300 30 20<br>Ta=25℃ Ta=25℃ 19 Ta=25℃<br>290 IFn==30pcs10mA 25 nVR=10V=30pcs 18 f=1MHzVR=0V<br>17 n=10pcs<br>20<br>280 16<br>15 15<br>270 14<br>10 13<br>260 5 AVE:2.017uA 12 AVE:17.34pF<br>AVE:270.2mV 11<br>250 0 10<br>VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP<br>20 10 10<br>Ifsm 1cyc Ifsm Ifsm<br>15 t<br>8.3ms 8.3ms<br>8.3ms<br>1cyc<br>10 5 5<br>AVE:3.90A<br>5<br>0 0 0<br>1 10 100 1 10 100<br>NUMBER OF CYCLES TIME:t(ms)<br>IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS<br>0.1<br>1000 Rth(j-a) 0.1<br>0.08<br>0.08<br>D=1/2<br>Rth(j-c) 0.06 DC 0.06<br>100 IM=10mAMounted on epoxIF=100mAy board 0.04 Sin(θ＝180) 0.04 DC D=1/2<br>0.02 0.02 Sin(θ＝180)<br>1ms time<br>300us<br>10 0 0<br>0.001 0.1 10 1000 0 0.1 0.2 0 10 20 30<br>TIME:t(s) AVERAGE RECTIFIED<br>Rth-t CHARACTERISTICS FORWARD CURRENT：Io(A) REVERSE VOLTAGE:VR(V)<br>Io-Pf CHARACTERISTICS VR-PR CHARACTERISTICS<br>TERMINALS:Ct(pF)<br>FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>TERMINALS:Ct(pF)<br>FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN<br>PEAK SURGE PEAK SURGE PEAK SURGE<br>FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A)<br>(W)<br>TRANSIENT R<br>FORWARD POWER DISSIPATION:Pf(W) REVERSE POWER DISSIPATION:P<br>THAERMAL IMPEDANCE:Rth (℃/W)<br>**----- End of picture text -----**<br>


Rev.A 2/3 

RB521G-30 

## Diodes 

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0.3 0.3<br>0A Io 0A Io<br>0V VR 0V VR<br>0.2 DC t D=t/TVR=15V 0.2 DC t D VR=15V =t/T<br>T Tj=125℃ T Tj=125℃<br>D=1/2 D=1/2<br>0.1 0.1<br>Sin(θ＝180) Sin(θ＝180)<br>0 0<br>0 25 50 75 100 125 0 25 50 75 100 125<br>AMBIENT TEMPERATURE:Ta(℃)<br>CASE TEMPARATURE:Tc(℃)<br>Derating Curveﾞ(Io-Ta)<br>Derating Curveﾞ(Io-Tc)<br>AVERAGE RECTIFIED AVERAGE RECTIFIED<br>FORWARD CURRENT:Io(A) FORWARD CURRENT:Io(A)<br>**----- End of picture text -----**<br>


Rev.A 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1